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Theoretical analysis of cross-plane lattice thermal conduction in graphite

Chinese Physics B 2019年第6期28卷 317-323页

作者： Yun-Feng Gu College of Electronic and Mechanical Engineering Nanjing Forestry University

A theoretical analysis of the cross-plane lattice thermal conduction in graphite is performed by using first-principles calculations and in the single-mode relaxation time approximation. The out-of-plane phonon acoustic mode ZA and optical mode ZO have almost 80% and 20% of contributions to cross-plane heat transfer, respectively. However, these two branches have a small part of total specific heat above 300 K. Phonons in the central 16% of Brillouin zone contribute80% of cross-plane transport. If the group velocity angle with respect to the graphite layer normal is less than 30?, then the contribution is 50% at 300 K. The ZA phonons with long cross-plane mean free path are focused in the cross-plane direction, and the largest mean free path is on the order of several micrometers at room temperature. The average value of cross-plane mean free path at 300 K is 112 nm for ZA phonons with group velocity angle with respect to the layer normal being less than 15?. The average value is dropped to 15 nm when phonons of all branches in the whole Brillouin zone are taken into account, which happens because most phonons have small or even no contributions.

关键词： graphite cross-plane thermal conduction phonon mean free path layered systems

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Thermal conductivity characterization of ultra-thin silicon film using the ultra-fast transient hot strip method

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Chinese Physics B 2019年第7期28卷 499-503页

作者： Yan-Yan Zhang Ran Cheng Dong Ni Ming Tian Ji-Wu Lu Yi Zhao College of Information Science and Electronic Engineering Zhejiang University Hangzhou 310027 China State Key Laboratory of Industrial Control Technology Zhejiang University Hangzhou 310027 China Shanghai Huali Microelectronics Corporation Shanghai 200120 China College of Electrical and Information Engineering Hunan University Changsha 410082 China

Thermal conductivity is an important material parameter of silicon when studying the performance and reliability of devices or for guiding circuit design when considering heat dissipation, especially when the self-heating effect becomes prominent in ultra-scaled *** cross-plane thermal conductivity of a thin silicon film is lacking due to the difficulty in sensing high thermal conductivity in the vertical *** this paper, a feasible method that utilizes an ultra-fast electrical pulse within 20 μs combined with the hot strip technique is *** the best of our knowledge, this is the first work that shows how to extract the cross-plane thermal conductivity of sub-50 nm(30 nm, 17 nm, and 10 nm)silicon films on buried *** ratio of the extracted cross-plane thermal conductivity of the silicon films over the bulk value is only about 6.9%, 4.3%, and 3.8% at 300 K, *** the thickness of the films is smaller than the phonon mean free path, the classical heat transport theory fails to predict the heat dissipation in nanoscale ***, in this study, a ballistic model, derived from the heat transport equation based on extended-irreversible-hydrodynamics(EIT), is used for further investigation, and the simulation results exhibit good consistence with the experimental *** extracted effective thermal data could provide a good reference for precise device simulations and thermoelectric applications.

关键词： cross-plane thermal conductivity ultra-fast transient hot strip method

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