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Bioinspired directional liquid transport induced by the corner effect

Nano Research 2023年第3期16卷 3913-3923页

作者： Zhongyu Shi Zhongxue Tang Bojie Xu Lei Jiang Huan Liu Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education School of ChemistryBeihang UniversityBeijing 100191China Research Institute for Frontier Science Beihang UniversityBeijing 100191China

Many natural creatures have demonstrated unique abilities in directional liquid transport(DLT)for better adapting to the local environment,which,for a long time,have inspired the material fabrication for applications in microfluidics,self-cleaning,water collection,***,DLTs aroused by the corner effect have been witnessed in various natural organisms,where liquid transports/spreads spontaneously along the corner structures in microgrooves,wedges or conical structures driven by micro-/nano-scaled capillary forces without external energy ***,these DLTs show advantages of ultrahigh speed,continuous proceeding,and/or external ***,we reviewed recent research advances on the bioinspired DLTs induced by the corner effect,as well as the involved mechanisms and the artificial counterpart materials with various *** also introduced some bioinspired materials that are capable of stimulus-responsive DLT under external ***,we suggested perspectives of the bioinspired DLTs in liquid manipulations.

关键词： directional liquid transport bioinspired materials corner effect capillary rise Laplace pressure

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corner effects in double-gate/gate-all-around MOSFETs

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Chinese Physics B 2007年第3期16卷 812-816页

作者：侯晓宇周发龙黄如张兴 Institute of Microelectronics Peking University Beijing 100871 China

Two kinds of corner effects existing in double-gate （DG） and gate-all-around （GAA） MOSFETs have been investigated by three-dimensional （3D） and two-dimensional （2D） simulations. It is found that the corner effect caused by conterminous gates, which is usually deemed to deteriorate the transistor performance, does not always play a negative role in GAA transistors. It can suppress the leakage current of transistors with low channel doping, though it will enhance the leakage current at high channel doping. The study of another kind of corner effect, which exists in the corner at the bottom of the silicon pillar of DG/GAA vertical MOSFETs, indicates that the D-top structure with drain on the top of the device pillar of vertical transistor shows great advantage due to lower leakage current and better DIBL （drain induced barrier lowering） effect immunity than the S-top structure with source on the top of the device pillar. Therefore the D-top structure is more suitable when the requirement in leakage current and short channel character is critical.

关键词： GAA DG DIBL S-top D-top corner effect

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Analytical analysis of surface potential for grooved-gate MOSFET

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Chinese Physics B 2006年第3期15卷 631-635页

作者：张晓菊龚欣王俊平郝跃 Key Laboratory of Ministry of Education for Wide Band-Cap Semiconductor Materials and Devices Microelectronics Institute Xidian University Xi'an 710071 China

The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner θ0. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect （SCE） immunity.

关键词： surface potential corner effect grooved-gate MOSFET

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