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Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields

Science China(Information Sciences) 2019年第10期62卷 164-170页

作者： Xiaokang LI Baotong ZHANG Bowen WANG Xiaoyan XU Yuancheng YANG Shuang SUN Qifeng CAI Shijie HU Xia AN Ming LI Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University

In this paper, the HfOx-based resistive random access memory（RRAM） devices with sub-100 nm pyramid-type electrodes were fabricated. With the help of tip-enhanced electric field around the pyramid-type electrodes, it was experimentally demonstrated that the novel devices have better cycle-to-cycle variation control, lower forming/set voltage（1.97/0.7V） and faster switching speed（≤30 ns under 0.9V pulse） as well as better endurance reliability than conventional flat electrode resistive memory devices. In addition,the novel RRAM is experimentally demonstrated with independence of electrode number for the first time to present great potential in scaling down. This novel structure metal-oxide based RRAM will be suitable for the future low-power non-volatile memory application.

关键词： RRAM pyramid-type electrode variation reliability switching speed conducting filament

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Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

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Chinese Physics B 2013年第9期22卷 554-558页

作者：张楷亮刘凯王芳尹富红韦晓莹赵金石 School of Electronics Information Engineering Tianjin Key Laboratory of Film Electronic & Communication DevicesTianjin University of Technology School of Electronics Information Engineering Tianjin University

We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the conducting mechanism is discussed in detail. growth pattern of the conducting filaments. Additionally, the related

关键词： resistive switching vanadium oxide conducting filament magnetron sputtering

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Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing

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SmartMat 2021年第1期2卷 99-108页

作者： Fangxu Yang Lingjie Sun Qingxi Duan Huanli Dong Zhaokun Jing Yuchao Yang Rongjin Li Xiaotao Zhang Wenping Hu Leon Chua Key Laboratory of Molecular Optoelectronic Sciences School of ScienceTianjin UniversityTianjinChina Beijing National Research Center for Molecular Sciences Chinese Academy of SciencesBeijingChina Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityBinhai New CityFuzhouChina Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijingChina Department of Electrical Engineering and Computer Sciences University of CaliforniaBerkeleyCaliforniaUSA

Memristors proposed by Leon Chua provide a new type of memory device for novel neuromorphic computing ***,the approaching of distinct multi‐intermediate states for tunable switching dynamics,the con-trolling of conducting filaments(CFs)toward high device repeatability and reproducibility,and the ability for large‐scale preparation devices,remain full of ***,we show that vertical‐organic‐nanocrystal‐arrays(VONAs)could make a way toward the *** perfect one‐dimensional structure of the VONAs could confine the CFs accurately with fine‐tune resistance states in a broad range of 103 *** availability of large‐area VONAs makes the fabrication of large‐area crossbar memristor arrays facilely,and the analog switching characteristic of the memristors is to effectively imitate different kinds of synaptic plasticity,indicating their great potential in future applications.

关键词： conducting filament memristor organic electronics organic single crystal

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