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High-throughput fabrication and semi-automated characterization of oxide thin film transistors

Chinese Physics B 2020年第1期29卷 82-88页

作者：韩炎兵 Sage Bauers 张群 Andriy Zakutayev Materials Science Center National Renewable Energy LaboratoryGolden CO 80401USA Department of Materials Science Fudan UniversityShanghai 200433China School of Physics and Microelectronics Zhengzhou UniversityZhengzhou 450052China

High throughput experimental methods are known to accelerate the rate of research,development,and deployment of electronic *** example,thin films with lateral gradients in composition,thickness,or other parameters have been used alongside spatially-resolved characterization to assess how various physical factors affect the material properties under varying measurement ***,multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the *** this work,we apply these high throughput experimental methods to thin film transistors(TFTs),demonstrating combinatorial channel layer growth,device fabrication,and semi-automated characterization using sputtered oxide TFTs as a case *** show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library,such as channel thickness and length,channel cation compositions,and oxygen atmosphere during *** also present a semi-automated method to measure the 44 devices fabricated on a 50 mm×50 mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short ***,we propose a fully automated characterization system for similar TFT libraries,which can be coupled with high throughput data *** results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices.

关键词： combinatorial sputtering indium zinc oxide(IZO)thin film transistor(TFT) channel gradient oxygen content

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