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Damage and recovery of fiber Bragg grating under radiation environment

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Chinese Physics B 2018年第9期27卷 230-236页

作者：温世喆熊伟晨黄力平王镇锐张兴斌何振辉 School of Material Science and Engineering Sun Yat-Sen University center for Space Technology Sun-Yat Sen University School of Engineering Sun Yat-Sen University School of Physics Sun Yat-Sen University School of Physics and Astronomy Sun Yat-Sen University State Key Laboratory of Optoelectronic Materials and Technologies Sun Yat-Sen University

To develop the application of fiber Bragg gratings as temperature and strain sensors in space environments, it is necessary to understand the effect of high-energy radiation on the performance of the fiber Bragg grating. We performed an experiment involving Co（60）-γ ionizing irradiation with a total dose of 1.01 × 10~6 rad on two Ge-doped single-mode fiber Bragg gratings with central wavelengths of 825 and 835 nm, respectively. We found that, with the increase of radiation dose, the redshift of the peak wavelength of the reflection spectrum of the fiber Bragg gratings indicated the increase of the refractive index and the number of color centers. After irradiation, the refractive index decreased with the decreasing number of color centers. We analyzed the influence of ionizing irradiation on the transmission performance of the fiber Bragg gratings using a color-center model, which explained the experimental results. The proposed model was used to determine the creation rate and annihilation rates of the color center, which are foundational data for using the fiber Bragg gratings in space applications.

关键词： fiber Bragg grating radiation color center refractive index damage recovery annihilation

Multi-chromatic silicon nanocrystals

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Light(Science & Applications) 2017年第1期6卷 721-728页

作者： Benjamin Bruhn Benjamin JM Brenny Sidoeri Dekker Ilker Doğan Peter Schall Katerina Dohnalová Van der Waals-Zeeman Institute University of AmsterdamScience Park 904Amsterdam 1098 XHThe Netherlands center for Nanophotonics AMOLFScience Park 104Amsterdam 1098 XGThe Netherlands Department of Applied Physics Eindhoven University of TechnologyP.O.Box 512Eindhoven 5600 MBThe Netherlands Dutch Institute for Fundamental Energy Research(DIFFER) P.O.Box 6336Eindhoven 5600 HHThe Netherlands

Silicon nanocrystals(SiNCs)have great potential to become environmental friendly alternatives to heavy-metal containing nanocrystals for applications including medical imaging,lighting and displays.SiNCs exhibit excellent photostability,non-toxicity and abundant resources,but their often reported inefficient and spectrally limited light emission seriously impair their applications.Here we demonstrate a new method that converts SiNCs into an efficient and robust multi-chromatic phosphor.Using~15 keV electron-beam irradiation of oxide-capped SiNCs,we introduce several types of color centers into the nanocrystal’s oxide shell with efficient blue,green and red emission bands,together yielding warm-white photoluminescence,even for a single SiNC.Introduced centers are not native to the original system and we relate them to known defects in silica.Unlike in the silica host,however,here the centers are efficiently optically excitable.Provided further optimization and up-scaling of this method,e-beam irradiated SiNCs can be of great interest as white phosphors for applications such as LEDs.

关键词： cathodoluminscence color center electron beam multi-chromaticity silicon nanocrystals

Radiation induced color centers in cerium-doped and cerium-free multicomponent silicate glasses

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Journal of Rare Earths 2014年第11期32卷 1037-1042页

作者：傅鑫杰宋力昕李家成 The Key Laboratory of Inorganic Coating Materials Shanghai Institute of Ceramics Chinese Academy of Sciences University of Chinese Academy of Sciences

The effect of doped cerium on the radiation-resistance behavior of silicate glass was investigated in our work. The ultraviolet-visible absorption spectra and electron paramagnetic resonance（EPR） spectra were obtained after the cerium-rich and cerium-free multicomponent silicate glasses（K509 and K9） were irradiated by gamma rays with a dose range from 10 to 1000 kGy. The results showed that E’ center, oxygen deficient center（ODC） and non-bridging oxygen hole center（HC1 and HC2） were induced in K9 and K509 glasses after radiation. The concentrations of all color centers presented an exponential growth with the increase of the gamma dose. Moreover, the concentration of HC1 and HC2 in cerium-doped K509 glass was much lower than that in cerium-free K9 glass at the same dose of radiation, which could be attributed to the following mechanism： Ce3＋ ions capturing holes then forming Ce3＋＋ centers inhibited the formation of hole trapped color centers（HC1 and HC2） and Ce4＋ ions capturing electrons to form Ce3＋ centers suppressed the formation of electron trapped color centers like E’ center.

关键词： multicomponent silicate glasses cerium ions gamma radiation color center rare earths

Study of colors of diamond-like carbon films

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Science China(Physics,Mechanics & Astronomy) 2013年第3期56卷 545-550页

作者： LI QiongYu WANG FuMing ZHANG Ling Department of Physics Xiamen University

Reflective and transmissive film interference colors were calculated for DLC films on the Si and SiO 2 substrates.The calculated interference colors were compared with photographed colors of the prepared DLC samples.The observed film colors were found to match reasonably well with the corresponding calculated colors,indicating that DLC film colors come from interference instead of color center effects.color charts for DLC films on the Si and SiO 2 substrates with various optical gaps were constructed,and the relationship between interference color and film properties such as optical gap,thickness and substrate were investigated.Usefulness of the calculated color charts in estimating optical gap or thickness of DLC films were demonstrated.

关键词： DLC film color interference color color center color chart

Spectroscopic Properties of Ce:YAP Scintillation Crystal Grown by Temperature Gradient Technique

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Journal of Rare Earths 2007年第5期25卷 596-600页

作者：李红军赵广军苏良碧晋云霞周国清徐军 Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences

Spectroscopic properties of Ce-doped yttrium orthoaluminate （Ce：YA1O3 or Ce：YAP） crystals gown by temperature gradient technique （TGT） were investigated, and the effects of the growth conditions on the properties were analyzed. Methods of optical absorption （OA）, photoluminescence （PL）, photoluminescence decay （PLD）, X-my excited luminescence （XL） and cathodeluminescence （CL） were used in these investigations. The results showed that the absorption band peak at 202,394 and 532 nm originated from F and F^＋ color center induced by the weak reducing growth atmosphere, green emission band near 500 nm derived from Ce3^＋ -Ce^3＋ pairs and band at 650 - 850 nm from some unintentional impurity in crystals.

关键词： Ce：YAP scintillation crystal spectroscopic property color center rare earths

A New Promising X-Ray Storage Phosphor BaBrCl∶Eu^(2+)

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Journal of Rare Earths 2006年第4期24卷 503-505页

作者：孟宪国王永生靳辉孙力 Key Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic Technology Beijing Jiaotong University Beijing 100044 China

Photostimulated luminescence was observed in X-ray irradiated BaBrCl doped with Eu^2 ＋ . It shows an emission band that peak at 413 nm, and two difference absorption spectra （DAS） bands that peak at - 550 nm and 675 nm respectively. The stimulation energy is lower than that of BaFX：Eu^2＋（X = Cl, Br）, and matches the cheaper, more portable, and more convenient semiconductor laser better. The results indicate that BaBrCl ： Eu^2＋ shows positive potential as a promising X-ray storage phosphor for practical utilization.

关键词： photostimulated luminescence color center electron trapping rare earths

UV Laser Induced Transmission Change of Pure and Doped Silica Glass

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Journal of Wuhan University of Technology(Materials Science) 2008年第6期23卷 879-882页

作者：谢峻林邓涛 School of Materials Science and Engineering Wuhan University of Technology

Pure and F,GeO2-doped silica glass cut from fiber preforms prepared by plasma assisted chemical vapor deposition（PCVD） were investigated by ultraviolet absorption spectroscopy.The ultraviolet absorption characteristics of these glasses were also studied after UV laser irradiation and heating treatment.It was found that absorption band near 240 nm assigned to GODC was found both in GeO2-doped and F-GeO2 co-doped silica glass,but absorption intensity of the latter was lower than that of the former.It＇s because F can react with GODC and GeE′ simultaneously and reduce their concentration.After irradiation,UV absorption change of F-GeO2 co-doped silica glass was weaker than that of GeO2-doped silica glass,it thus can be concluded that introduction of F could depress the UV absorption of GeO2-doped silica core effectively.

关键词： irradiation color center absorption spectrum

Effect of TSL and PSL in Al^(3+)-Doped BaFBr∶Eu^(2+) at Difference Synthesis Conditions

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Journal of Rare Earths 2003年第2期21卷 149-152页

作者：余华熊光楠李岩 Institute of Material Physics Tianjin Institute of Technology

Thermal stimulated luminescence (TSL) and photostimulated luminescence (PSL) were used to investigate the luminescent performance of Al 3+ doped BaFBr∶Eu 2+ in different synthetic conditions. Theory analysis shows that the decay of TSL spectra is different from that of PSL spectra. Theoretical calculation was used to investigate the effects of energy state in Al 3+ doped BaFBr∶Eu 2+ by different synthetic conditions. The relationship of color center’s energy and different synthetic conditions is discussed.

关键词： optics BaFBr∶Eu 2+ thermal luminescence photostimulated luminescence color center rare earths

Photoluminescence and Raman Spectroscopy Study on color centers of Helium Ion-Implanted 4H-SiC

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Nanomanufacturing and Metrology 2020年第3期3卷 205-217页

作者： Ying Song Zongwei Xu Rongrong Li Hong Wang Yexin Fan Mathias Rommel Jiayu Liu Georgy V.Astakhov Gregor Hlawacek Bingsheng Li Jun Xu Fengzhou Fang State Key Laboratory of Precision Measuring Technology and Instruments Centre of MicroNano Manufacturing TechnologyTianjin UniversityTianjin 300072China State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory School of PhysicsPeking UniversityBeijing 100871China State Key Laboratory of Separation Membranes and Membrane Processes Tianjin Polytechnic UniversityTianjin 300387China Fraunhofer Institute for Integrated Systems and Device Technology(IISB).Schottkystrasse 10.91058 Erlangen Germany Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf(HZDR).Bautzner Landstrasse 400.01328 DresdenGermany State Key Laboratory for Environment-friendly Energy Materials Southwest University of Science and TechnologyMianyang 621010SichuanChina

color centers in silicon carbide(SiC)are promising candidates for quantum technologies.However,the richness of the polytype and defect configuration of SiC makes the accurate control of the types and position of defects in SiC still challenging.In this study,helium ion-implanted 4H-SiC was characterized by atomic force microscopy(AFM),confocal photoluminescence(PL),and confocal Raman spectroscopy at room temperature.PL signals of silicon vacancy were found and analyzed using 638-nm and 785-nm laser excitation by means of depth profiling and SWIFT mapping.Lattice defects(C-C bond)were detected by continuous laser excitation at 532 nm and 638 nm,respectively.PL/Raman depth profiling was helpful in revealing the three-dimensional distribution of produced defects.Differences in the depth profiling results and SRIM simulation results were explained by considering the depth resolution of the confocal measurement setup,helium bubbles,as well as swelling.

关键词： Helium ion implantation Silicon carbide(SiC) color center Point defect Silicon vacancy Confocal photoluminescence spectroscopy Raman spectroscopy Atomic force microscopy(AFM)