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Intrinsic-trap-regulating growth of clean graphene on high-entropy alloy substrate

Nano Research 2022年第5期15卷 4717-4723页

作者： Xiaofei Hu Jiongzhao Li Zhe Wang Xudong Qian Chenqi Zhu Xiaogang Peng Key Laboratory of Excited-State Materials of Zhejiang Province and Department of Chemistry Zhejiang UniversityHangzhou 310027China

A facile way to grow few-layer graphene on high-entropy alloy sheets is presented in this *** systematically investigate the growth mechanism of graphene using the unique properties of FeCoNiCu_(0.25)high-entropy *** intrinsic-trap-regulating growth mechanism derives from the synergistic effect of the multi-metal atoms and sluggish diffusion of high-entropy *** a result,as-obtained few-layer of graphene has the characteristics of wide coverage,large size,good continuity,and high crystallinity with less amorphous carbon and extra *** such as the Cu content,annealing time,growth temperature,growth time,carbon source flow rate,hydrogen flow rate and heat treatment method play a key role in the growth of high-quality graphene,and the best growth parameters have been ***,increasing alloy entropy is found to be responsible for the formation of high-quality graphene.

关键词： high-entropyalloys graphene chemical vapordeposition

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Weak mismatch epitaxy and structural feedback in graphene growth on copper foil

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Nano Research 2013年第2期6卷 99-112页

作者： Neil R. Wilson Alexander J. Marsden Mohammed Saghir Catherine J. Bromley Renald Schaub Giovanni Costantini Thomas W. White Cerianne Partridge Alexei Barinov Pavel Dudin Ana M. Sanchez James J. Mudd Marc Walker Gavin R. Bell Department of Physics University of Warwick Coventry CV4 7AL UK EaStCHEM School of Chemistry University of St Andrews St Andrews KY16 9ST UK Department of Chemistry University of Warwick Coventry CV4 7AL UK Sincrotrone Trieste S.Cp.A. Area Science Park 1-34012 Basovizza Trieste Italy

Graphene growth by low-pressure chemical vapor deposition on low cost copper foils shows great promise for large scale applications. It is known that the local crystallography of the foil influences the graphene growth rate. Here we find an epitaxial relationship between graphene and copper foil. Interfacial restructuring between graphene and copper drives the formation of （nl0） facets on what is otherwise a mostly Cu（100） surface, and the facets in turn influence the graphene orientations from the onset of growth. Angle resolved photoemission shows that the electronic structure of the graphene is decoupled from the copper indicating a weak interaction between them. Despite this, two preferred orientations of graphene are found, ±8° from the Cu[010] direction, creating a non-uniform distribution of graphene grain boundary misorientation angles. Comparison with the model system of graphene growth on single crystal Cu（110） indicates that this orientational alignment is due to mismatch epitaxy. Despite the differences in symmetry the orientation of the graphene is defined by that of the copper. We expect these observations to not only have importance for controlling and understanding the growth process for graphene on copper, but also to have wider implications for the growth of two-dimensional materials on low cost metal substrates.

关键词： graphene chemical vapordeposition mismatch epitaxy structural feedback low energy electrondiffraction angle resolvedphoto-emissionspectroscopy (ARPES)

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