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chemical vapor deposition growth of single-crystalline cesium lead halide microplatelets and heterostructures for optoelectronic applications

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Nano Research 2017年第4期10卷 1223-1233页

作者： Yiliu Wang Xun Guan Dehui Li Hung-Chieh Cheng Xidong Duan Zhaoyang Lin Xiangfeng Duan Department of Chemistry and Biochemistry University of California Los Angeles Los Angeles CA 90095 USA State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 China School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China Department of Materials Science and Engineering University of California Los Angeles Los Angeles CA 90095 USA California NanoSystems Institute University of California Los Angeles Los Angeles CA 90095 USA

Organic-inorganic hybrid halide perovskites, such as CH3NHgPbI3, have emerged as an exciting class of materials for solar photovoltaic applications; however, they are currently plagued by insufficient environmental stability. To solve this issue, all-inorganic halide perovskites have been developed and shown to exhibit significantly improved stability. Here, we report a single-step chemical vapor deposition growth of cesium lead halide （CsPbX3） microcrystals. Optical microscopy studies show that the resulting perovskite crystals predominantly adopt a square-platelet morphology. Powder X-ray diffraction （PXRD） studies of the resulting crystals demonstrate a highly crystalline nature, with CsPbC13, CsPbBr3, and CsPbI3 showing tetragonal, monoclinic, and orthorhombic phases, respectively. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） studies show that the resulting platelets exhibit well-faceted structures with lateral dimensions of the order of 10-50 μm, thickness around 1 μm, and ultra-smooth surface, suggesting the absence of obvious grain boundaries and the single-crystalline nature of the individual microplatelets. Photoluminescence （PL） images and spectroscopic studies show a uniform and intense emission consistent with the expected band edge transition. Additionally, PL images show brighter emission around the edge of the platelets, demonstrating a wave-guiding effect in high-quality crystals. With a well-defined geometry and ultra-smooth surface, the square platelet structure can function as a whispering gallery mode cavity with a quality factor up to 2,863 to support laser emission at room temperature. Finally, we demonstrate that such microplatelets can be readily grown on a variety of substrates, including silicon, graphene, and other two-dimensional materials such as molybdenum disulfide, which can readily allow the construction of heterostructure optoelectronic devices, including a graphene/perovskite/ graphene vertically-stacked pho

关键词： chemical vapor deposition inorganic perovskite microplatelets photoluminescence optical cavity photodetection

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chemical vapor deposition synthesis of intrinsic van der Waals ferroelectric SbSI nanowires

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Nano Research 2024年第11期17卷 9756-9763页

作者： Longyi Fu Yang Zhao Dapeng Li Weikang Dong Ping Wang Jijian Liu Denan Kong Lin Jia Yang Yang Meiling Wang Shoujun Zheng Yao Zhou Jiadong Zhou Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology Beijing 100081 China School of Instrumentation and Optoelectronic Engineering Beihang University Beijing 100081 China College of Materials Science and Engineering Taiyuan University of Technology Taiyuan 030024 China Advanced Research Institute of Multidisciplinary Science and School of Chemistry and chemical Engineering Beijing Institute of Technology Beijing 100081 China

Intrinsic ferroelectric materials play a critical role in the development of high-density integrated device. Despite some two-dimensional (2D) ferroelectrics have been reported, the research on one-dimensional (1D) intrinsic ferroelectric materials remains relatively scare since 1D atomic structures limit their van der Waals (vdW) epitaxy growth. Here, we report the synthesis of 1D intrinsic vdW ferroelectric SbSI nanowires via a confined-space chemical vapor deposition. By precisely controlling the partial vapor pressure of I2 and reaction temperature, we can effectively manipulate kinetics and thermodynamics processes, and thus obtain high quality of SbSI nanowires, which is determined by Raman spectroscopy and high-resolution scanning transmission electron microscopy characterizations. The ferroelectricity in SbSI is confirmed by piezo-response force microscopy measurements and the ferroelectric transition temperature of 300 K is demonstrated by second harmonic generation. Moreover, the in-plane polarization switching can be maintained in the thin SbSI nanowires with a thickness of 20 nm. Our prepared 1D vdW ferroelectric SbSI nanowires not only enrich the vdW ferroelectric systems, but also open a new possibility for high-power energy storage nanodevices.

关键词： SbSI chemical vapor deposition one-dimensional(1D) ferroelectricity second harmonic generation thermodynamic and kinetics

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chemical vapor deposition synthesis of V-doped MoS_(2)

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Rare Metals 2023年第12期42卷 3985-3992页

作者： Yang Yang Qing-Rong Liang Chun-Li Zhu Guo-Zhong Zheng Jian Zhang Shou-Jun Zheng Yung-Chang Lin De-Zhi Zheng Jia-Dong Zhou School of Physics Beijing Institute of TechnologyBeijing 100081China School of Information and Electronics and Advanced Research Institute of Multidisciplinary Science Beijing Institute of TechnologyBeijing 100081China School of Physics Shaanxi Normal UniversityXi'an 710119 China The Institute of Scientific and Industrial Research Osaka UniversityOsaka 567-0047Japan Advanced Research Institute of Multidisciplinary Science Beijing Institute of TechnologyBeijing 100081China

Van der Waals coupling with different stacking configurations can significantly affect the optical and electronic properties of ultrathin two-dimensional(2D)materials,which is an effective way to tune device ***,we report a salt-assisted chemical vapor deposition method for the synthesis of bilayer V-doped MoS_(2) with 2H and 3R phases,which are demonstrated by the second harmonic generation and scanning transmission electron ***,the mobility of the 3R phase V-doped MoS_(2) is 6.2%higher than that of the 2H *** first-principles calculations,we further reveal that this particular behavior is attributed to the stronger interlayer coupling of 3R compared to the 2H stacking *** research can be further generalized to other transition metal chalcogenides and will contribute to the development of electronic devices based on 2D materials in the future.

关键词： chemical vapor deposition Synthesis Firstprinciples calculations 2H 3R

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chemical vapor deposition growth behavior of graphene

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International Journal of Minerals,Metallurgy and Materials 2022年第1期29卷 136-143页

作者： Jie Wang Tengfei Fan Jianchen Lu Xiaoming Cai Lei Gao Jinming Cai Faculty of Materials Science and Engineering Kunming University of Science and TechnologyKunming 650093China Faculty of Mechanical and Electrical Engineering Kunming University of Science and TechnologyKunming 650093China Faculty of Science Kunming University of Science and TechnologyKunming 650093China

The optimized growth parameters of graphene with different morphologies,such as dendrites,rectangle,and hexagon,have been obtained by low-pressure chemical vapor deposition on polycrystalline copper *** evolution of fractal graphene,which grew on the polycrystalline copper substrate,has also been *** the equilibrium growth state of graphene is disrupted,its intrinsic hexagonal symmetry structure will change into a non-hexagonal symmetry ***,we present a systematic and comprehensive study of the evolution of graphene with different morphologies grown on solid copper as a function of the volume ratio of methane to hydrogen in a controllable ***,the phenomena of stitching snow-like graphene together and stacking graphene with different angles was also observed.

关键词： graphene chemical vapor deposition various morphologies dendrites methane

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chemical vapor deposition growth of two-dimensional heterojunctions

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Science China(Physics,Mechanics & Astronomy) 2018年第1期61卷 2-18页

作者： Yu Cui Bo Li JingBo Li ZhongMing Wei State Key LaboratoO' of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beij'ing 100083 China

The properties of two-dimensional(2 D) layered materials with atom-smooth surface and special interlayer van der Waals coupling are different from those of traditional materials. Due to the absence of dangling bonds from the clean surface of 2 D layered materials, the lattice mismatch influences slightly on the growth of 2 D heterojunctions, thus providing a flexible design strategy.2 D heterojunctions have attracted extensive attention because of their excellent performance in optoelectronics, spintronics, and valleytronics. The transfer method was utilized for the fabrication of 2 D heterojunctions during the early stage of fundamental research on these materials. This method, however, has limited practical applications. Therefore, chemical vapor deposition(CVD) method was recently developed and applied for the preparation of 2 D heterojunctions. The CVD method is a naturally down-top growth strategy that yields 2 D heterojunctions with sharp interfaces. Moreover, this method effectively reduces the introduction of contaminants to the fabricated heterojunctions. Nevertheless, the CVD-growth method is sensitive to variations in growth conditions. In this review article, we attempt to provide a comprehensive overview of the influence of growth conditions on the fabrication of 2 D heterojunctions through the direct CVD method. We believe that elucidating the effects of growth conditions on the CVD method is necessary to help control and improve the efficiency of the large-scale fabrication of 2 D heterojunctions for future applications in integrated circuits.

关键词： two-dimensional materials heterojunctions chemical vapor deposition

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chemical vapor deposition synthesis of two-dimensional freestanding transition metal oxychloride for electronic applications

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Science China(Information Sciences) 2019年第12期62卷 149-163页

作者： Shengnan YAN Pengfei WANG Chen-Yu WANG Tao XU Zhuan LI Tianjun CAO Moyu CHEN Chen PAN Bin CHENG Litao SUN Shi-Jun LIANG Feng MIAO National Laboratory of Solid State Microstructures School of PhysicsCollaborative Innovation Center of Advanced Microstructures Nanjing University Key Laboratory of MEMS of Ministry of Education Southeast University

Two-dimensional transition metal oxychlorides(MOCl, M = Fe, Cr, V, Ti, Sc) with the metaloxygen plane sandwiched by two layers of chloride ions possess many exotic physical properties. Nevertheless,it is of great challenge to grow two-dimensional single-crystal MOCl because polyvalent nature of transition metal elements usually gives rise to mixed oxyhalides compounds with distinct physical properties. Here, we take VOCl as an example to present a solution for synthesizing 2 D freestanding MOCl with various thicknesses through chemical vapor deposition(CVD) method. The single crystal and elementary composition as well as elements ratio of as-grown samples have been characterized through measurements of X-ray diffraction, X-ray photoelectron spectroscopy and energy-dispersive spectroscopy, respectively. Furthermore, we demonstrate that 2 D VOCl-based memristive devices show low power consumption and excellent device reliability due to the layered-structure and electrically insulating properties of 2 D VOCl flakes. Besides, we utilize the feature of multilevel resistive switching that memristive devices exhibit to emulate depression and potentiation of synaptic plasticity. This method developed in this study may open up a new avenue for the growth of 2 D MOCl with single crystal and pave the way for high-performance electronic applications.

关键词： transition metal oxychlorides chemical vapor deposition freestanding memristive device neuromorphic computing

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chemical vapor deposition growth of monolayer MoSe2 nanosheets

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Nano Research 2014年第4期7卷 511-517页

作者： Jonathan C. Shaw Hailong Zhou Yu Chen Nathan O. Weiss Yuan Liu Yu Huang Xiangfeng Duan Department of Chemistry and Biochemistry University of California Los Angeles CA 90095 USA Department of Materials Science and Engineering University of California Los Angeles CA 90095 USA California NanoSystems Institute University of California Los Angeles CA 90095 USA

The synthesis of two-dimensional （2D） layered materials with controllable thickness is of considerable interest for diverse applications. Here we report the first chemical vapor deposition growth of single- and few-layer MoSe2 nanosheets. By using Se and MoO3 as the chemical vapor supply, we demonstrate that highly crystalline MoSe2 can be directly grown on the 300 nm SiO2/Si substrates to form optically distinguishable single- and multi-layer nanosheets, typically in triangular shaped domains with edge lengths around 30 btm, which can merge into continuous thin films upon further growth. Micro-Raman spectroscopy and imaging was used to probe the thickness-dependent vibrational properties. Photoluminescence spectroscopy demonstrates that MoSe2 monolayers exhibit strong near band edge emission at 1.55 eV, while bilayers or multi-layers exhibit much weaker emission, indicating of the transition to a direct band gap semiconductor as the thickness is reduced to a monolayer.

关键词： chemical vapor deposition molybdenum diselenide two-dimensional materials transition metaldichalcogenide layered materials semiconductor

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chemical vapor deposition growth of phase-selective inorganic lead halide perovskite films for sensitive photodetectors

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Chinese chemical Letters 2021年第1期32卷 489-492页

作者： Weilong Xu Mengsi Niu Xiaoyu Yang Haiyue Chen Xiaohong Cai Trevor A.Smith Kenneth PGhiggino Xiaotao Hao School of Photoelectric Engineering Changzhou Institute of TechnologyChangzhou 213002China School of Physics State Key Laboratory of Crystal MaterialsShandong UniversityJi'nan 250100China ARC Centre of Excellence in Exciton Science School of ChemistryThe University of MelbourneParkvilleVictoria 3010Australia

Inorganic lead halide perovskites are attractive optoelectronic materials owing to their relative stability compared to organic cation *** chemical vapor deposition(CVD) method offers potential for high quality perovskite film *** deposition temperature is a critical parameter determining the film quality owing to the melting difference between the ***,perovskite films were deposited by the CVD method at various temperatures between 500-800℃.The perovskite phase converts from CsPb_(2)Br_(5) to CsPbBr_(3) gradually as the deposition temperature is *** grain size of the perovskite films also increases with *** phase transition mechanism was *** photoexcited state dynamics were investigated by spatially and temporally resolved fluorescence *** perovskite film deposited under 750℃ condition is of the CsPbBr_(3) phase,showing low trap-state density and large crystalline grain size.A photodetector based on perovskite films shows high photocurrent and an on/off ratio of ~2.5×10^(4).

关键词： chemical vapor deposition Inorganic perovskite Phase-selective Photodetector Photophysical dynamics

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chemical vapor deposition growth and transport properties of MoS_(2)-2H thin layers using molybdenum and sulfur as precursors

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Rare Metals 2022年第10期41卷 3574-3578页

作者： Zhi-Tian Shi Hong-Bin Zhao Xiao-Qiang Chen Ge-Ming Wu Feng Wei Hai-Ling Tu Advanced Electronic Materials Institute General Research Institute for Nonferrous MetalsBeijing100088China National Engineering Research Center for Semiconductor Materials General Research Institute for Nonferrous MetalsBeijing100088China

This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition(CVD) method,with molybdenum thin film and solid sulfur as *** some improvements were made to reduce the amount of metastable MoS_(2)-3 *** morphology of the acquired MoS_(2) layers,existing as triangular flakes or large-area continuous films,can be controlled by adjusting the synthesis time and reacting *** characterization results show that the monolayer MoS_(2) flakes reveal a(002)-oriented growth on SiO_(2)/Si substrates,and its crystalline domain size is approximately 30 μm,and the thickness is 0.65 *** the synthesis of MoS_(2)-3 R is restrained,the electronic transport properties of MoS_(2) with different layers were investigated,revealing that those properties equal with those of MoS_(2) samples prepared by exfoliation methods.

关键词： Molybdenum disulfide chemical vapor deposition Raman spectra Atomic force microscope Electronic transport properties

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chemical vapor deposition for few‐layer two‐dimensional materials

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SmartMat 2023年第3期4卷 1-4页

作者： Qing Zhang Dechao Geng Wenping Hu Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityFuzhouChina Department of Chemistry National University of SingaporeSingaporeSingapore Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of ChemistrySchool of ScienceTianjin UniversityTianjinChina

chemical vapor deposition(CVD)approach offers a controllable strategy for preparing large‐area and high‐quality few‐layer(mainly bilayer or trilayer)twisted or untwisted two‐dimensional(2D)materials,and is predict... 详细信息

关键词： bilayer chemical vapor deposition trilayer two‐dimensional materials

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