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Oxygen Functionalization-Induced charging effect on Boron Active Sites for High-Yield Electrocatalytic NH_(3) Production

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Nano-Micro Letters 2022年第12期14卷 464-480页

作者： Ashmita Biswas Samadhan Kapse Ranjit Thapa Ramendra Sundar Dey Institute of Nano Science and Technology(INST) Sector-81MohaliPunjab 140306India Department of Physics SRM University-APAmaravatiAndhra Pradesh 522240India

Ammonia has been recognized as the future renewable energy fuel because of its wide-ranging applications in H_(2) storage and transportation *** order to avoid the environmentally hazardous Haber-Bosch process,recently,the third-generation ambient ammonia synthesis has drawn phenom-enal attention and thus tremendous efforts are devoted to developing efficient electrocatalysts that would circumvent the bottlenecks of the electrochemical nitrogen reduction reaction(NRR)like competitive hydrogen evolution reac-tion,poor selectivity of N_(2) on catalyst ***,we report the synthesis of an oxygen-functionalized boron carbonitride matrix via a two-step pyrolysis *** conductive BNCO(1000)architecture,the compatibility of B-2p_(z) orbital with the N-2p_(z) orbital and the charging effect over B due to the C and O edge-atoms in a pentagon altogether facilitate N_(2) adsorption on the B edge-active *** optimum electrolyte acidity with 0.1 M HCl and the lowered anion crowding effect aid the protonation steps of NRR via an associative alternating pathway,which gives a sufficiently high yield of ammonia(211.5μg h^(−1) mg_(cat)^(−1))on the optimized BNCO(1000)catalyst with a Faradaic efficiency of 34.7%at−0.1 V vs *** work thus offers a cost-effective electrode material and provides a contemporary idea about reinforcing the charging effect over the secured active sites for NRR by selectively choosing the electrolyte anions and functionalizing the active edges of the BNCO(1000)catalyst.

关键词： C-doped boron nitride O-functionalization Density-functional theory(DFT) charging effect Nitrogen reduction reaction Ambient ammonia synthesis

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charging effect in Plasma Etching Mask of Hole Array

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Plasma Science and Technology 2013年第6期15卷 570-576页

作者：张鹏王俊孙阳丁泽军 Hefei National Laboratory for Physical Sciences at Microscale and Department of Physic University of Science and Technology of China JET Plasma Equipment Design Company Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics University of Science and Technology of China

It has already been found that the round shape of holes can be changed into hexagonal shape during plasma etching *** work aims to understand the mechanism behind such a shape change using particle simulation *** distribution of electric field produced by electrons was calculated for different heights from the mask *** is found that the field strength reaches its maximum around a hole edge and becomes the weakest between two holes. The field strength is weakened as moving away from the *** spatial distribution of this electric field shows obvious hexagonal shape around a hole edge at some distances from the surface. This charging distribution then affects the trajectories of ions that fall on a mask surface so that the round hole edge is etched to become a hexagonal hole *** changing of this hole shape will again alter the spatial distribution of electric field to enhance the charging effect dynamically.

关键词： plasma etching charging effect hole array

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A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography

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Journal of Semiconductors 2014年第12期35卷 144-149页

作者：于明岩赵士瑞景玉鹏施云波陈宝钦 The Higher Educational Key Laboratory for Measuring & Control Technology and Instrumentations of Heilongjiang Province Harbin University of Scienceand Technology Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate,such as high density biochips, flexible electronics and liquid crystal display screens.

关键词： charging effect pattern distortions electron beam lithography

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effects of Tailed Pulse-Bias on Ion Energy Distributions and charging effects on Insulating Substrates

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Plasma Science and Technology 2015年第7期17卷 560-566页

作者：刘增戴忠玲贺才强王友年 School of Physics and Optoelectronic Technology Dalian University of Technology

Abstract A hybrid sheath model, including a fluid model and a Monte Carlo （MC） method, is proposed to study ion energy distributions （IEDs） driven by a radiofrequency （RF） with a tailed pulse-bias on an insulating substrate, where a charging effect is obviously caused by the ions accumulated. This surface charging effect will significantly affect the IEDs on the insulating substrate. In this paper, a voltage compensation method is employed to eliminate the charging effect by making the pulse-bias waveform have a certain gradient. Furthermore, we investigate the IEDs under the condition of different pulse-bias duty ratios, waveforms, amplitudes, and cycle proportions. It is found that the parameters of the pulsed source can effectively modulate the IEDs on the insulating substrate and the charging effect, and more desired IEDs are obtained by using the voltage compensation method with modulations of pulse parameters.

关键词： sheath IEDs tailed pulse-bias waveform hybrid model charging effect

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Dynamic characteristics of charging effects on the dielectric constant due to E-beam irradiation： a numerical simulation

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Plasma Science and Technology 2018年第3期20卷 1-9页

作者：封国宝崔万照刘璐 National Key Lab of Science and Technology on Space Microwave China Academy of Space Technology Xi'an 710000 People's Republic of China School of Electronic and Information Engineering Xi'an Jiaotong University Xi'an 710049 People's Republic of China School of Computer Science and Engineering Xi'an University of Technology Xi'an 710048 People's Republic of China

A series of synthetic variations of material intrinsic properties always come with charging phenomena due to electron beam irradiation. The effects of charging on the dielectric constant will influence the charging dynamic in return. In this paper, we propose a numerical simulation for investigating the dynamic characteristics of charging effects on the dielectric constant due to electron beam irradiation. The scattering process between electrons and atoms is calculated considering elastic and inelastic collisions via the Rutherford model and the fast secondary electron model, respectively. Internal charge drift due to E-field, density gradient caused diffusion, charges trap by material defect, free electron and hole neutralization, and variation in the internal dielectric constant are considered when simulating the transport process. The dynamics of electron and hole distributions and charging states are demonstrated during E-beam irradiation. As a function of material nonlinear susceptibility and primary energy, the dynamics of charging states and dielectric constants are then presented in the charging process. It is found that the variation in the internal dielectric constant is more with respect to the depth and irradiation time. Material with a larger nonlinear susceptibility corresponds a faster charging enhancement. In addition, the effective dielectric constant and the surface potential have a linear relationship in the charging balance. Nevertheless, with shrinking charging affect range, the situation with a higher energy primary electron comes with less dielectric constant variation. The proposed numerical simulation mode of the charging process and the results presented in this study offer a comprehensive insight into the complicated charging phenomena in electron irradiation related fields.

关键词： charging effect dielectric constant E-beam irradiation numerical simulation

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Calibration of Binding Energy Positions with C1s for XPS Results

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Journal of Wuhan University of Technology(Materials Science) 2020年第4期35卷 711-718页

作者：方德 HE Feng 谢峻林 XUE Lihui State Key Laboratory of Silicate Materials for Architectures Wuhan University of TechnologyWuhan 430070China Center for Materials Research and Analysis Wuhan University of TechnologyWuhan 430070China School of Materials Science and Engineering Wuhan University of TechnologyWuhan 430070China

The adventitious carbon located at 284.8 eV was used to calibrate samples without the carbon *** the carbon is as a major part of the inorganic material,the adventitious carbon should be identified and used as the *** is no adventitious carbon on the surfaces of the polymer materials,so using C1s of the carbon in the polymer itself to calibrate the charging effect is ***,compared with gold and argon,a more practical and convenient method based on C1s is proposed to get the right positions for binding energy peaks.

关键词： XPS calibration charging effect binding energy C1s

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Ion Transport to a Photoresist Trench in a Radio Frequency Sheath

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Plasma Science and Technology 2012年第11期14卷 958-964页

作者：张赛谦戴忠玲王友年 School of Physics and Optoelectronic Technology Dalian University of Technology

We present a model which is used to study ion transport in capacitively coupled plasma （CCP） discharge driven by a radio-frequency （rf） source for an etching process. The model combines a collisional sheath model with a trench model. The sheath model can calculate the ion energy distributions （IEDs） and ion angular distributions （IADs） to specify the initial conditions of the ions incident into the trench domain （a simulation area near and in the trench）. Then, considering the charging effect on the photoresist sidewalls and the rf-bias applied to the substrate, the electric potentials in the trench domain are computed by solving the Laplace equation. Finally, the trajectories, IEDs and IADs of ions impacting on the bottom of the trench are obtained using the trench model. Numerical results show that as the pressure increases, ions tend to strike the trench bottom with smaller impact energies and larger incident angles due to the collision processes, and the existence of the trench has distinct influences on the shape of the IEDs and IADs. In addition, as the bias amplitude increases, heights of both peaks decrease and the IEDs spread to a higher energy region.

关键词： ion motion IED IAD charging effect sheath plasma etching CCP

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