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The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

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Chinese Physics B 2011年第12期20卷 517-524页

作者：秦军瑞陈书明刘必慰刘征梁斌杜延康 School of Computer Science National University of Defense Technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor （CMOS） technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor （PMOS） and an N metal-oxide semiconductor （NMOS） are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will irlcrease as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.

关键词： substrate doping charge collection single event transient propagation bipolar amplification

Defect-rich spinel ferrites with improved charge collection properties for efficient solar water splitting

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Journal of Advanced Ceramics 2023年第3期12卷 612-624页

作者： Runfa Tan Yoo Jae Jeong Qu Li Minje Kang In Sun Cho Department of Materials Science&Engineering Ajou UniversitySuwon 16499Republic of Korea Department of Energy Systems Research Ajou UniversitySuwon 16499Republic of Korea

Spinel zinc ferrite(ZnFe_(2)O_(4),ZFO)is a potential photoanode material for photoelectrochemical(PEC)water splitting because of its ideal bandgap(1.9–2.1 eV)and superior chemical stability in aqueous ***,the low charge collection efficiency significantly hinders the improvement in PEC ***,we report an ultrafast and effective flame activation route to enhance the charge collection properties of ***,high-temperature flame(>1300℃)facilitated surface and grain boundary diffusions,increasing the grain size and connectivity of the ZFO ***,the reducing atmosphere of the flame enabled the formation of surface defects(oxygen vacancy and Fe^(2+)),thereby increasing the charge carrier density and surface adsorption ***,these two factors promoted charge transport and transfer kinetics,resulting in a 10-fold increase in the photocurrent density over the unactivated ***,we deposited a thin Al_(2)O_(3)overlayer to passivate the ZFO surface and then the NiFeOx oxygen evolution catalyst(OEC)to expedite hole injection into the *** surface passivation and OEC deposition led to a remarkable photocurrent density of~1 mA/cm^(2)at 1.23 V versus the reversible hydrogen electrode,which is the highest value among all reported ZFO ***,the NiFeOx/Al_(2)O_(3)/F-ZFO photoanode achieved excellent photocurrent stability over 55 h(96%retention)and superior faradaic efficiency(FE>94%).Our flame activation method is also effective in improving the photocurrent densities of other spinel ferrites:CuFe_(2)O_(4)(93 times),MgFe_(2)O_(4)(16 times),and NiFe_(2)O_(4)(12 times).

关键词： spinel ferrites flame activation defect-rich surface charge collection photoelectrochemical(PEC) water splitting

A new semiconductor-based SERS substrate with enhanced charge collection and improved carrier separation: CuO/TiO_(2) p-n heterojunction

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Chinese Chemical Letters 2023年第7期34卷 434-438页

作者： Dongxue Yu Lin Xu Huizhu Zhang Jia Li Weie Wang Libin Yang Xin Jiang Bing Zhao College of Materials Science and Engineering College of PharmacyJiamusi UniversityJjiamusi 154007China State Key Laboratory of Supramolecular Structure and Materials jilin UniversityChangchun 130012China

In this paper, CuO/TiO_(2) p-n heterojunction was developed as a new surface enhanced Raman scattering(SERS) substrate to magnify Raman signal of 4-mercaptobenzoic acid(4-MBA) molecule. In the heterojunction-molecule system, CuO as an “electron capsule” can not only offer more electrons to inject into the surface state energy level of TiO_(2) and consequently bring additional charge transfer, but also improve photogenerated carrier separation efficiency itself due to strong interfacial coupling in the interface of heterojunction, which together boost SERS performance of the heterojunction substrate. As expected,owing to the enhanced charge collection capacity and the improvement of photogenerated carrier separation efficiency derived from internal electric field and strong interface coupling provided in the interface of heterojunction, this substrate exhibits excellent SERS detection sensitivity towards 4-MBA, with a detection limit as low as 1 × 10^(-10)mol/L and an enhancement factor of 8.87 × 10~6.

关键词： SERS CuO/TiO_(2)heterojunction Photo-induced charge transfer Semiconductor substrate charge collection Carrier separation

Using 3D TCAD Simulation to Study charge collection of a p-n Junction in a 0.18μm Bulk Process

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Journal of Semiconductors 2008年第9期29卷 1692-1697页

作者：梁斌陈书明刘必慰国防科技大学计算机学院长沙410073

Single event transient of a real p-n junction in a 0.18μm bulk process is studied by 3D TCAD simulation. The impact of voltage, temperature, substrate concentration, and LET on SET is studied. Our simulation results demonstrate that biases in the range 1.62 to 1.98V influence DSET current shape greatly and total collected charge weakly. Peak current and charge collection within 2ns decreases as temperature increases,and temperature has a stronger influence on SET currents than on total charge. Typical variation of substrate concentration in modern VDSM processes has a negligible effect on SEEs. Both peak current and total collection charge increases as LET increases.

关键词： charge collection p-n junction very deep sub-micro 3D device simulation radiation

Heavy ion energy influence on multiple-cell upsets in small sensitive volumes:from standard to high energies

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Nuclear Science and Techniques 2024年第5期35卷 109-121页

作者： Yang Jiao Li-Hua Mo Jin-Hu Yang Yu-Zhu Liu Ya-Nan Yin Liang Wang Qi-Yu Chen Xiao-Yu Yan Shi-Wei Zhao Bo Li You-Mei Sun Pei-Xiong Zhao Jie Liu Institute of Modern Physics Chinese Academy of ScienceLanzhou 730000China University of Chinese Academy of Science Beijing 100049China Spallation Neutron Source Science Center Dongguan 523803China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 214000China Beijing Microelectronics Technology Institute Beijing 100084China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesBeijing 100029China

The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened ***,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing ***-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node *** range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ***,ground accelerator experiments have mainly obtained low-energy ion irradiation ***,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains *** this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM *** influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was *** findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.

关键词： 28 nm static random access memory(SRAM) Energy effects Heavy ion Multiple-cell upset(MCU) charge collection Inverse cosine law

Low-noise and low-power pixel sensor chip for gas pixel detectors

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Nuclear Science and Techniques 2024年第3期35卷 142-152页

作者： Zhuo Zhou Shi-Qiang Zhou Dong Wang Xiang-Ming Sun Chao-Song Gao Peng-Zhen Zhu Wei-Ping Ren Jun Liu Mu-Xian Li Chen Lian Chun-Lai Dong PLAC Key Laboratory of Quark and Lepton Physics(MOE)Central China Normal UniversityWuhan 430079China

Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in *** pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μ*** array is divided into 16 subarrays,with pixels of 400 rows×32 columns per *** pixel incorporates two charge sensors:a diode sensor and a Topmetal *** in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival *** pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μ*** an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~*** this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of ***,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.

关键词： charge collection Gas detectors Semiconductor detectors X-ray detectors

A novel simulation method to evaluate the collection performance of a monolithic active pixel sensor

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Chinese Physics C 2011年第10期35卷 940-945页

作者：付民唐祯安 School of Electronic Science and Technology Dalian University of Technology

A novel simulation method is presented in this paper to evaluate the collection performance of monolithic active pixel sensor （MAPS） devices for minimum ionizing particle tracking. A simplified 3D matrix pixel structure is built using the computer aided design software Sentaurus. The virtual device is then divided into hundreds of parts and an independent customized X photon model is involved in each part to simulate the conditions under 55Fe radiation. After data processing and analysis, charge collection efficiency, collection time and diffusion conditions can be estimated in detail. In order to verify the reliability of the method, comparisons are made between the simulations and experiments. Although there are some defects, it can be concluded that the proposed idea is a feasible method for the evaluation of the MAPS collection performance.

关键词： MAPS charge collection evaluation simulation

Simulation analysis of heavy-ion-induced single-event response for nanoscale bulk-Si FinFETs and conventional planar devices

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Science China(Technological Sciences) 2017年第3期60卷 459-466页

作者： YU JunTing CHEN ShuMing CHEN JianJun HUANG PengCheng College of Computer National University of Defense Technology Changsha 410073 China National Laboratory for Parallel and Distributed Processing National University of Defense Technology Changsha 410073 China

FinFET technologies are becoming the mainstream process as technology scales *** on 28-nm bulk-Si FinFETs and

关键词： charge collection bipolar amplification reversed bipolar effect single-event effect(SEE) single-event transient(SET) FinFET planar device

Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence

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Science China(Information Sciences) 2022年第8期65卷 295-296页

作者： Jingyi LIU Xia AN Gensong LI Zhexuan REN Ming LI Xing ZHANG Ru HUANG Institute of Microelectronics Peking University

Dear editor,Germanium(Ge) has been considered as a promising candidate of channel material for sub-7 nm owing to its high carrier mobility and good compatibility with conventional Si CMOS process [1]. Although Ge-based technology is still under development and not in massive production, it is quite meaningful to explore its single event effect(SEE) before potential space applications.

关键词： charge collection BULK