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Quantitative measurement of the charge carrier concentration using dielectric force microscopy

Chinese Physics B 2023年第3期32卷 449-455页

作者：赖君奇陈博文邢志伟李雪飞陆书龙陈琪陈立桅 i-Lab CAS Center for Excellence in NanoscienceSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China In-situ Center for Physical Sciences School of Chemistry and Chemical EngineeringShanghai Jiao Tong UniversityShanghai 200240China

The charge carrier concentration profile is a critical factor that determines semiconducting material properties and device *** force microscopy(DFM)has been previously developed to map charge carrier concentrations with nanometer-scale spatial ***,it is challenging to quantitatively obtain the charge carrier concentration,since the dielectric force is also affected by the ***,we quantitative measured the charge carrier concentration at the saturation mobility regime via the rectification effect-dependent gating ratio of *** measuring a series of n-type GaAs and GaN thin films with mobility in the saturation regime,we confirmed the decreased DFM-measured gating ratio with increasing electron *** with numerical simulation to calibrate the tip–sample geometry-induced systematic error,the quantitative correlation between the DFM-measured gating ratio and the electron concentration has been established,where the extracted electron concentration presents high accuracy in the range of 4×10^(16)–1×10^(18)cm^(-3).We expect the quantitative DFM to find broad applications in characterizing the charge carrier transport properties of various semiconducting materials and devices.

关键词： dielectric force microscopy charge carrier concentration quantitative measurement numerical simulation

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Computational exploration and screening of novel Janus MA2Z4 (M = Sc–Zn, Y–Ag, Hf–Au;A=Si, Ge;Z=N, P) monolayers and potential application as a photocatalyst

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Frontiers of physics 2022年第6期17卷 51-61页

作者： Weibin Zhang Woochul Yang Yingkai Liu Zhiyong Liu Fuchun Zhang College of Physics and Electronics Information Yunnan Key Laboratory of Opto-Electronic Information TechnologyKey Laboratory of Advanced Technique&Preparation for Renewable Energy Materials-Ministry of EducationYunnan Normal UniversityKunming 650500China College of Physics and Electronic Information Yan’an UniversityYan’an 716000China Department of Physics Dongguk UniversitySeoul 04620Republic of Korea

By high-throughput calculations,13 thermally and environmentally stable Janus MA_(2)Z_(4) monolayers were screened from 104 types of *** 13 stable monolayers have very high charge carrier concentrations(×10^(15) cm^(–2)),which are better than those of the well-known graphene and TaS_(2).Because of their excellent conductivity,the 6 monolayers with band gaps less than 0.5 eV are identified as potential electrode materials for hydrogen evolution reaction *** potential applications as photoelectric or photocatalytic materials,bandgaps(Eg-HSE)higher than 0.5 eV remained,which resulted in 7 potential *** on optical absorption analysis in the visible-light range,H-HfSiGeP_(4) and HMoSiGeP_(4) have higher absorption ability and optical conductivity,which is quite impressive for optoelectronic,solar cell device,and photocatalysis ***,the transmittance coefficient of Janus MA_(2)Z_(4) monolayers is approximately 70%–80%in the visible-light range,which implies that these monolayers show good light *** potential applications as photocatalysts,the redox potential and charge effective mass analysis indicate that H-HfSiGeP_(4),HMoSiGeP_(4),T-ScSiGeN_(4),and T-ZrSiGeN_(4) are suitable photocatalysts for CO_(2) reduction *** high-throughput identification,13 types of new and stable Janus MA2Z4 monolayers were explored,and the basic properties and potential applications were investigated,which can reduce the time for experiments and provide basic data for the material genome initiative.

关键词： Janus MA2Z4 high-throughput identification charge carrier concentration electronic structure optical properties

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