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carrier localization enhanced high responsivity in graphene/semiconductor photodetectors

Chip 2022年第1期1卷 41-46页

作者： An-Qi Hu Qiao-Li Liu Xia Guo State Key Laboratory of Information Photonics and Optical Communications School of Electronic EngineeringBeijing University of Posts and Telecommuni-cationsBeijing 100876China

Graphene on top of semiconductor builds an emerging highly sensitive photodetector with internal *** to the graphene/semiconductor interface junction,one kind of photo-excited carriers are drifted to graphene and the other carriers remain in the *** decisive factor for the gain is the local-ization extent of the non-transporting *** localization strategies such as Schottky barrier regulation,introducing localized states,quantum dot confinement,and double heterojunction design are *** the high sensitivity,the accompanying persis-tent photocurrent limits the response *** long-wavelength light acceleration and the back-gate voltage acceleration methods are utilized to effectively eliminate the persistent photocurrent.

关键词： Graphene Semiconductor carrier localization Photodetector Responsivity

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Tuning Stark effect by defect engineering on black titanium dioxide mesoporous spheres for enhanced hydrogen evolution

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Chinese Chemical Letters 2024年第11期35卷 254-259页

作者： Bingke Zhang Dongbo Wang Jiamu Cao Wen He Gang Liu Donghao Liu Chenchen Zhao Jingwen Pan Sihang Liu Weifeng Zhang Xuan Fang Liancheng Zhao Jinzhong Wang School of Materials Science and Engineering Harbin Institute of TechnologyHarbin 150001China School of Astronautics Harbin Institute of TechnologyHarbin 150001China Center for High Pressure Science and Technology Advanced Research Shanghai 201203China Qingdao University of Science and Technology Qingdao 266061China State Key Laboratory of High Power Semiconductor Lasers School of PhysicsChangchun University of Science and TechnologyChangchun 130022China

Defects can strongly affect the lattice,strain,and electronic structures of nanomaterials photocatalysts,like a double-edged sword of both positive significance and negative influence on photocatalytic *** date,most studies into defects only partially elucidated their beneficial or detrimental roles in ***,a quantitative understanding of the photocatalytic performances modulated by defect concentration still needs to be ***,a series of TiO_(2-X)mesoporous spheres(MS)with different oxygen vacancy concentrations for photocatalytic applications were prepared by hightemperature chemical *** link between oxygen vacancy concentration and photocatalytic performance was successfully *** localization of carriers dominated by the Stark effect is first enhanced and then weakened with increasing oxygen vacancy concentration,which is a crucial factor in explaining the double-edged sword role of defect concentration in *** the reduction temperature rises to 300℃,carrier localization dominated by the quantum-confined Stark effect maximizes the separation ability of photo generated electron hole pairs,thus exhibiting the best catalytic performance for photocatalytic hydrogen production and the degradation of organic pollutants,as demonstrated by a hydrogen evolution rate of 523.7μmol g^(-1)h^(-1)and a ninefold higher RhB photodegradation rate compared to TiO_(2)*** work offers excellent flexibility for precisely constructing high-performance photocatalysts by understanding vacancy engineering.

关键词： Photocatalysis Defect carrier localization TiO_(2-X) Stark effect

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Dielectric Properties of Eu-Doped CaCu_3Ti_4O_(12) with Different Compensation Mechanisms

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Acta Metallurgica Sinica(English Letters) 2017年第2期30卷 97-103页

作者： Jun-Wei Liu Da-Yong Lu Xin-Yu Yu Qiao-Li Liu Qiang Tao Hong Change Pin-Wen Zhu State Key Laboratory of Superhard Materials Jilin University Research Center for Materials Science and Engineering Jilin Institute of Chemical Technology School of Physical Science and Technology Inner Mongolia University

To get a better understanding of the influence of rare-earth element doping,CaCu3Ti4O12（CCTO） samples with a partial substitution of Ca with Eu with different compensation mechanisms were designed and prepared by solid-state *** the ceramics were single phase,while the dielectric constants and thermally activated energy values for dielectric relaxation in Eu-doped ceramics were both lower than those of ***（0.875）Eu（0.1）Cu3Ti4O12（CECT1）exhibited a slight decrease in both the permittivity and electric resistance of grain boundaries compared with CCTO,while Ca（0.85）Eu（0.1）Cu3Ti4O12（CECT2） underwent a sharp decrease in permittivity associated with an abnormally large *** different dielectric behavior indicates that the dielectric properties of CCTO are sensitive to the valence states of cations and *** variation of permittivity is related to the localization of carriers,which,according to the XPS results,should be caused by the presence of oxygen *** formation of defect complexes between cations and oxygen vacancies leads to the increase in resistance and prevents the hopping between Cu^＋ and Cu^2＋,which is an important source of the polarization in grain boundaries.

关键词： CaCu3Ti4O12 Compensate doping carrier localization Oxygen vacancy

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carrier transport barrier in AlGaN-based deep ultraviolet LEDs on offcut sapphire substrates

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Chinese Optics Letters 2024年第2期22卷 148-158页

作者：陈秋爽陈荔陈聪高歌郭炜叶继春 Ningbo Institute of Materials Technology and Engineering Ningbo 315201China University of Chinese Academy of Sciences Beijing 100049China

AlGaN-based light-emitting diodes(LEDs)on offcut substrates enhance radiative emission via forming carrier localization centers in multiple quantum wells(MQWs).This study introduces the carrier transport barrier concept,accessing its impact on the quantum efficiency of LEDs grown on different offcut sapphire substrates.A significantly enhanced internal quantum efficiency(IQE)of 83.1%is obtained from MQWs on the 1°offcut sapphire,almost twice that of the controlled 0.2°offcut ***,1°offcut LEDs have higher turn-on voltage and weaker electroluminescence than 0.2°*** calculations demonstrate the existence of a potential barrier on the current path around the step-induced Ga-rich ***-rich stripes reduce the turn-on voltage but restrict sufficient driving current,impacting LED performance.

关键词： carrier localization step-bunching potential barrier offcut substrate DUV LEDs

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