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High-performance multilayer WSe2 field-effect transistors with carrier type control

Nano Research 2018年第2期11卷 722-730页

作者： Pudasaini, Pushpa Raj Oyedele, Akinola Zhang, Cheng Stanford, Michael G. Cross, Nicholas Wong, Anthony T. Hoffman, Anna N. Xiao, Kai Duscher, Gerd Mandrus, David G. Ward, Thomas Z. Rack, Philip D. Department of Materials Science and Engineering University of Tennessee Knoxville USA Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge USA Bredesen Center for Interdisciplinary Research and Graduate Education University of Tennessee Knoxville USA Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge USA

In this stud high-performance multilayer WSe2 field-effect transistor （FET） devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. carrier type control in multilayer WSe2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe2 thickness. The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses 〈 3, - 4, and 〉 5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and oDtoelectronic alpplications.

关键词： transition metaldichalcogenide field-effect transistors carrier control plasma treatment carrier mobility

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Surface adsorption and carrier control in LaAlO3/SrTiO3 heterointerface

Surface adsorption and carrier control in LaAlO3/SrTiO3 hete...

引用

2012年理论与高性能计算化学国际会议

作者： Wei Hu Jinlong Yang Hefei National Laboratory for Physical Science at Microscale and Department of Chemical Physics USTC

Surface molecule and atom adsorption behaviors in LAO/STO heterointerface have been investigated with density functional theory （DFT） calculations. The results indicate surface polar molecule adsorption can regulate the carrier mobility in LAO/STO via the control of charge transfer between the surface states of LAO and the conductivity buried in the STO. The oxygen vacancies on the LAO surfaces take primary effect in surface adsorption process. Furthermore, many atoms （H, Cu and Si） adsorption on LAO surfaces can donate electrons to the LAO/STO interfaces and effectively enhance the carrier concentration of 2DEG.

关键词： LaAlO3/SrTiO3 2DEG Surface adsorption carrier control

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