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Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

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Chinese Physics B 2011年第9期20卷 425-429页

作者：刘子扬张进成段焕涛薛军帅林志宇马俊彩薛晓咏郝跃 School of Microelectronics and State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXidian University

The strain relaxation of an A1GaN barrier layer may be influenced by a thin cap layer above, and affects the transport properties of A1GaN/GaN heterostructures. Compared with the slight strain relaxation found in A1GaN barrier layer without cap layer, it is found that a thin cap layer can induce considerable changes of strain state in the A1GaN barrier layer. The degree of relaxation of the A1GaN layer significantly influences the transport properties of the two-dimensional electron gas （2DEG） in A1GaN/GaN heterostructures. It is observed that electron mobility decreases with the increasing degree of relaxation of the A1GaN barrier, which is believed to be the main cause of the deterioration of crystalline quality and morphology on the A1GaN/GaN interface. On the other hand, both GaN and A1N cap layers lead to a decrease in 2DEC density. The reduction of 2DEG caused by the GaN cap layer may be attributed to the additional negative polarization charges formed at the interface between CaN and A1GaN, while the reduction of the piezoelectric effect in the A1GaN layer results in the decrease of 2DEC density in the case of A1N cap layer.

关键词： cap layer strain relaxation A1GaN/GaN transport properties

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Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

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Journal of Semiconductors 2016年第12期37卷 40-44页

作者：刘阳柴常春史春蕾樊庆扬刘彧千 School of Microelectronics Xidian UniversityKey Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices

Simulations are carried out to explore the possibility of achieving high breakdown voltage of Gain HEMT （high-electron mobility transistor）. GaN cap layers with gradual increase in the doping concentration from 2 x 10^16 to 5 x 10^19 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/A1GaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID （un-intentionally doped） GaN/A1GaN/GaN HEMT. We calculated and analyzed the distribution of electrons＇ density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices.

关键词： GaN HEMT optimization design breakdown voltage cap layer

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