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Photovoltage analysis of a heterojunction solar cell

Chinese Physics B 2011年第5期20卷 359-362页

作者：熊超姚若河耿魁伟 School of Electronic and Information Engineering South China University of Technology

According to the p n junction model of Shockley, the relationship between the equilibrium carrier concentrations of n-type and p-type semiconductors on the edges of the depletion region of a p-n junction solar cell is analysed. The calculation results show that the photovoltage can exceed the built-in voltage for a special kind of heterojunction solar cell. When the photovoltage exceeds the built-in voltage under illumination, the dark current and the photocurrent are impeded by the peak of voltage barrier at the interface and the expression of the total I-V characteristic is given.

关键词： solar cells built-in voltage photovoltage heterojunction

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Correlation of resistance switching and polarization rotation in copper doped zinc oxide(ZnO:Cu)thin films studied by Scanning Probe Microscopy

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Journal of Materiomics 2019年第4期5卷 574-582页

作者： Juanxiu Xiao Tun Seng Herng Yang Guo Jun Ding Ning Wang Kaiyang Zeng State Key Laboratory of Marine Resource Utilization in South China Sea Hainan UniversityNo.58Renmin AvenueHaikouHainan570228China Department of Mechanical Engineering National University of Singapore9 Engineering Drive 1Singapore117576 Department of Materials Science and Engineering National University of Singapore9 Engineering Drive 1Singapore117576

This paper presents multiple-modes Scanning Probe Microscopy(SPM)studies on characterize the correlation of resistance switching(RS)and polarization rotation(PR)in copper doped ZnO(ZnO:Cu)thin ***,the bipolar RS behavior is confirmed by conductive Atomic Force Microscopy(c-AFM).The PR with almost 180phase angle is confirmed by using the Piezoresponse Force Microscopy(PFM)on the same *** addition,it elucidates that obvious PR behavior can be observed in the sample with increasing Cu concentration by combining Kelvin Probe Force Microscopy(KPFM).Furthermore,it is found that the region with downward polarization has low resistance state(LRS),whereas the region with upward polarization has high resistance state(HRS).Moreover,the Piezoresponse Force Spectroscopy(PFS)and Switching Spectroscopy PFM(SS-PFM)measurements further confirm that the existence of the built-in voltage,V_(built-in) is largest in the ZnO:Cu(8 at.%)film deposited at the oxygen partial pressure of 2×10^(-4) *** schematic diagrams of energy band diagram with varied built-in field,Ebuilt-in,polarization directions and redistributed charges are presented to explain the correlation between RS and PR behavior.

关键词： Resistive switching Polarization rotation built-in voltage ZnO:Cu thin film Next generation memory

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Enhanced Performance of Polymer Bulk Heterojunction Solar Cells with a Boronic Acid Functionalized Carbon Nanotubes Doped Buffer Layer

Enhanced Performance of Polymer Bulk Heterojunction Solar Ce...

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第四届新型太阳能电池学术研讨会

作者： Yang Dang Shiwei Zhuang Bonan Kang State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University

One-dimensional nanomaterials such as nanorods or nanotubes have attracted attention to develop its applications in varies fields and many efforts have been made to exploit the optoeletronic *** this regard, carbon nanotubes(CNTs) are an ideal material, as they have excellent carrier mobility, mechanical flexibility, and compatibility with the solution *** these conceptual advantages, however, polymer solar cells(PSCs) with carboxyl functionalized CNTs incorporated in their anode buffer layers have demonstrated significantly poor performance, due to the surface of CNTs has many oxygen-rich functional ***, the optical and electrical properties of CNTs can be tuned by modifying CNTs with functional *** this study, we demonstrate a simple synthetic route of boronic acid functionalized CNTs(bf-CNTs) and study of PEDOT:PSS:bf-CNTs buffer layer for high efficiency *** controlling the concentration of bf-CNTs(0-0.5 wt% in PEDOT:PSS), we found that the Jsc of the PSCs was increased from 10.90 to 12.51 mA/cm, the Voc was increased from 0.78 to 0.88 V, and an enhanced PCE from 5.02% to 6.95% was further *** effects on enhancement of device performance are originated from an increase in built-in voltage across the *** with decreased series resistance and increased mobilities, accelerated and enlarged charge extraction and reduced charge recombination were *** these effects induce a simultaneous enhancement in the Jsc and Voc of device performance after utilizing the bf-CNTs doped buffer layers.

关键词： polymer solar cells boronic acid functionalized CNTs built-in voltage carrier mobilities

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