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CsPbI3 nanorods as the interfacial layer for high-performance,all-solution-processed self-powered photodetectors

Journal of Materials Science & Technology 2021年第16期75卷 196-204页

作者： Muhammad Imran Saleem Shangyi Yang Attia Batool Muhammad Sulaman Chandrasekar Perumal Veeramalai Yurong Jiang Yi Tang Yanyan Cui Libin Tang Bingsuo Zou Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems Center for Micro-Nanotechnology School of Physics Key Laboratory of Advanced Optoelectronic Quantum Design and Measurement Ministry of Education Beijing Institute of Technology Kunming Institute of Physics Research Center for Materials Science Beijing Institute of Technology Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology School of Optics and Photonics Beijing Institute of Technology

Heterojunction is regarded as a crucial step toward realizing high-performance devices, particularly,forming gradient energy band between heterojunctions benefits self-powered photodetectors. Therefore, in this paper, the synthesis of CsPbInanorods(NRs) and its application as the interfacial layer in high-performance, all-solution-processed self-powered photodetectors are presented. For the bilayer photodetector ITO/ZnO(100 nm)/PbS-TBAI(150 nm)/Au, a responsivity of 3.6 A/W with a specific detectivity of 9.8 × 10Jones was obtained under 0.1 mW/cm~2 white light illumination at zero bias(*** self-powered mode). Meanwhile, the photocurrent was enhanced to an On/Off current ratio of 105 at zero bias with an open circuit voltage of 0.53 V for trilayer photodetector ITO/ZnO(100 nm)/PbSTBAI(150 nm)/CsPbI(250 nm)/Au, in which the CsPbINRs layer works as the interfacial layer. As a result, a specific detectivity of 4.5 × 10Jones with a responsivity of 11.12 A/W was obtained under0.1 mW/cm~2 white light illumination, as well as the rising/decaying time of 0.57 s/0.41 s with excellent stability and reproducibility upto four weeks in air. The enhanced-performance is ascribed to the mismatch bandgap between PbS-TBAI/CsPbIinterface, which can suppress the carrier recombination and provide efficient transport passages for charge carriers. Thus, it provides a feasible and efficient method for high-performance photodetectors.

关键词： Perovskite Interfacial layer Charge carrier recombination built-in potential Charge carrier separation Self-powered photodetector

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Enhanced CH4 yield by photocatalytic CO2 reduction using TiO2 nanotube arrays grafted with Au, Ru, and ZnPd nanoparticles

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Nano Research 2016年第11期9卷 3478-3493页

作者： Piyush Kar Samira Farsinezhad Najia Mahdi Yun Zhang Uchenna Obuekwe Himani Sharma Jing Shen Natalia Semagina Karthik Shankar Department of Electrical and Computer Engineering University of Alberta 9107-116 Street Edmonton Alberta T6G 2V4 Canada Department of Chemical & Materials Engineering University of Alberta 9107-116 Street Edmonton Alberta T66 2V4 Canada NRC National Institute for Nanotechnology 11421 Saskatchewan Dr. NW Edmonton Alberta T6G 2M9 Canada

Metal nanoparticle （NP） co-catalysts on metal oxide semiconductor supports are attracting attention as photocatalysts for a variety of chemical reactions. Related efforts seek to make and use Pt-free catalysts. In this regard, we report here enhanced CH4 formation rates of 25 and 60 μmol·g^-1·h^-1 by photocatalytic CO2 reduction using hitherto unused ZnPd NPs as well as Au and Ru NPs. The NPs are formed by colloidal synthesis and grafted onto short n-type anatase TiO2 nanotube arrays （TNAs）, grown anodically on transparent glass substrates. The interfacial electric fields in the NP-grafted TiO2 nanotubes were probed by ultraviolet photoelectron spectroscopy （UPS）. Au NP-grafted TiO2 nanotubes （Au-TNAs） showed no band bending, but a depletion region was detected in Ru NP-grafted TNAs （Ru-TNAs） and an accumulation layer was observed in ZnPd NP-grafted TNAs （ZnPd-TNAs）. Temperature programmed desorption （TPD） experiments showed significantly greater CO2 adsorption on NP-grafted TNAs. TNAs with grafted NPs exhibit broader and more intense UV-visible absorption bands than bare TNAs. We found that CO2 photoreduction by nanoparticle-grafted TNAs was driven not only by ultraviolet photons with energies greater than the TiO2 band gap, but also by blue photons close to and below the anatase band edge. The enhanced rate of CO2 reduction is attributed to superior use of blue photons in the solar spectrum, excellent reactant adsorption, efficient charge transfer to adsorbates, and low recombination losses.

关键词： metal nanoparticles (NPs) TiO2 nanotube arrays(TNAs) colloidal synthesis band bending built-in potential photocatalytic CO2reduction semiconductorheterojunctions

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Robust transport of charge carriers in in-plane 1T′-2H MoTe_(2) homojunctions with ohmic contact

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Nano Research 2021年第5期14卷 1311-1318页

作者： Donglin Lu Zhenqing Li Congsheng Xu Siwei Luo Chaoyu He Jun Li Gang Guo Guolin Hao Xiang Qi Jianxin Zhong Hunan Key Laboratory for Micro-Nano Energy Materials and Devices Laboratory for Quantum Engineering and Micro-Nano Energy Technologyand School of Physics and OptoelectronicsXiangtan UniversityHunan411105China

Metal-semiconductor ohmic contacts are required to reduce the energy dissipation for two-dimensional (2D) electronic devices, and phase engineering of 2D transition-metal dichalcogenides (TMDCs) is a promising approach for building ohmic contacts. Here, 2D in-plane 1T′-2H MoTe2 homojunctions were prepared by direct epitaxy via vapor deposition. The interface properties of in-plane 1T′-2H MoTe2 homojunction were investigated in detail by combining experiments, calculations and theories. The ohmic contact properties of 1T′-2H MoTe2 homojunction were proved according to Kelvin force probe microscopy and density functional theory calculations. The charge carriers robust transport in in-plane 1T′-2H MoTe2 homojunction without Fermi-level pinning can be well described by Poisson equation and band alignment. These results indicate that phase engineering of 2D TMDCs is promising to construct ohmic contacts for device applications.

关键词： 1T′-2H MoTe_(2)homojunction ohmic contact surface potential built-in potential

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CsPbI nanorods as the interfacial layer for high-performance,all-solution-processed self-powered photodetectors

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Journal of Materials Science & Technology 2021年第16期 196-204页

作者： Muhammad Imran Saleem Shangyi Yang Attia Batool Muhammad Sulaman Chandrasekar Perumal Veeramalai Yurong Jiang Yi Tang Yanyan Cui Libin Tang Bingsuo Zou Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems.Center for Micro-Nanotechnology School of PhysicsKey Laboratory of Advanced Optoelectronic Quantum Design and Measurement.Ministry of EducationBeijing Institute of TechnologyBeijing 100081China Kunming Institute of Physics Kunming 650223China Research Center for Materials Science Beijing Institute of TechnologyBeijing 100081China Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology School of Optics and PhotonicsBeijing Institute of TechnologyBeijing 100081China

Heterojunction is regarded as a crucial step toward realizing high-performance devices,particularly,forming gradient energy band between heterojunctions benefits self-powered ***,in this paper,the synthesis of CsPbI3 nanorods(NRs)and its application as the interfacial layer in high-performance,all-solution-processed self-powered photodetectors are *** the bilayer photodetector ITO/ZnO(100 nm)/PbS-TBAI(150 nm)/Au,a responsivity of 3.6 A/W with a specific detectivity of 9.8×10^(12)Jones was obtained under 0.1 mW/cm^(2)white light illumination at zero bias(*** self-powered mode).Meanwhile,the photocurrent was enhanced to an On/Off current ratio of 105 at zero bias with an open circuit voltage of 0.53 V for trilayer photodetector ITO/ZnO(100 nm)/PbSTBAI(150 nm)/CsPbI3(250 nm)/Au,in which the CsPbI3 NRs layer works as the interfacial *** a result,a specific detectivity of 4.5×10^(13)Jones with a responsivity of 11.12 A/W was obtained under0.1 mW/cm^(2) white light illumination,as well as the rising/decaying time of 0.57 s/0.41 s with excellent stability and reproducibility upto four weeks in *** enhanced-performance is ascribed to the mismatch bandgap between PbS-TBAI/CsPbI_(3)interface,which can suppress the carrier recombination and provide efficient transport passages for charge ***,it provides a feasible and efficient method for high-performance photodetectors.

关键词： Perovskite Interfacial layer Charge carrier recombination built-in potential Charge carrier separation Self-powered photodetector

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