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breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs

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Journal of Semiconductors 2014年第1期35卷 61-64页

作者：王冲陈冲何云龙郑雪峰马晓华张进成毛维郝跃 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics

The breakdown and the current collapse characteristics of high electron mobility transistors （HEMTs） with a low power F-plasma treatment process are investigated. With the increase of F-plasma treatment time, the saturation current decreases, and the threshold voltage shifts to the positive slightly. Through analysis of the Schottky characteristics of the devices with different F-plasma treatment times, it was found that an optimal F-plasma treatment time of 120 s obviously reduced the gate reverse leakage current and improved the breakdown voltage of the devices, but longer F-plasma treatment time than 120 s did not reduce gate reverse leakage current due to plasma damage. The current collapse characteristics of the HEMTs with F-plasma treatment were evaluated by dual pulse measurement at different bias voltages and no obvious deterioration of current collapse were found after low power F-plasma treatment.

关键词： high electron mobility transistors A1GaN/GaN breakdown voltage current collapse

breakdown voltage Research of Penning Gas Mixture in Plasma Display Panel

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Plasma Science and Technology 2005年第6期7卷 3127-3131页

作者：郭滨刚刘纯亮宋忠孝范玉锋夏星刘柳范多旺 Key Laboratory for Physical Electronics and Devices under Ministry of Education Xi'an Jiaotong UniversityXi'an 710049 China Key Laboratory of Opto-Electronic Technology and Intelligent Control under Ministry of Education Lanzhou Jiaotong UniversityLanzhou 730070 China

Paschen law and equations, which ignore the influence of the Penning ionization on the electron ionization coefficient （α）, are always used as the approximation of the breakdown voltage criterion of the Penning gas mixture in current researches of discharge characteristics of the plasma display panel （PDP）. It is doubtful that whether their results match the facts. Based on the Townsend gas self-sustaining discharge condition and the chemical kinetics analysis of the Penning gas mixture discharging in PDP, the empirical equation to describe the breakdown of the Penning gas mixture is given. It is used to calculate the breakdown voltage curves of Ne-Xe/MgO and Ne-Ar/MgO in a testing macroscopic discharge cell of AC-PDP. The effective secondary electron emission coefficients （γeff） of the MgO protective layers are derived by comparing the breakdown voltage curves obtained from the empirical equation with the experimental data of breakdown voltages. In comparison with the results calculated by the Paschen law and the equation which ignore the influence of the Penning ionization on α , the results calculated by the empirical equation have better conformity with experimental data. The empirical equation characterizes the breakdown of the Penning gas mixture in PDP effectively, and gives a convenient way to study its breakdown characteristics and the secondary electron emission behaviors.

关键词： plasma display panel （PDP） Penning gas mixture breakdown voltage the effective secondary electron emission coefficient

breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs

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Science China(Information Sciences) 2012年第2期55卷 473-479页

作者： DUAN BaoXing & YANG YinTang Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an China

This paper demonstrates that the depletion process for AlGaN/GaN high electron mobility tran-sistors(HEMTs)is different than that for silicon power devices by analyzing active region depletion.Based on the special breakdown principle that occurs in AlGaN/GaN HEMTs,we propose a new reduced surface field AlGaN/GaN HEMT with a double low-density drain(LDD)and a positively charged region near the drain to optimize the surface electric field and increase the breakdown voltage.In this structure,two negative charge regions with different doses are introduced into the polarization AlGaN layer to form a double LDD and decrease the high electric field near the gate by depleting two-dimensional electron gas.A positively charged region is added to the electrode near the drain to decrease the high electric field peak at the drain edge.By applying ISE(integrated systems engineering)simulation software,we verify that the virtual gate effect occurs in the AlGaN/GaN HEMTs.The breakdown voltage is improved from 257 V in the conventional structure to 550 V in the proposed structure.

关键词： AlGaN/GaN HEMTs breakdown voltage RESURF

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

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Chinese Physics B 2023年第1期32卷 470-477页

作者：田魁元刘勇杜江锋于奇 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China

A vertical junction barrier Schottky diode with a high-K/low-K compound dielectric structure is proposed and optimized to achieve a high breakdown voltage(BV).There is a discontinuity of the electric field at the interface of high-K and low-K layers due to the different dielectric constants of high-K and low-K dielectric layers.A new electric field peak is introduced in the n-type drift region of junction barrier Schottky diode(JBS),so the distribution of electric field in JBS becomes more uniform.At the same time,the effect of electric-power line concentration at the p-n junction interface is suppressed due to the effects of the high-K dielectric layer and an enhancement of breakdown voltage can be achieved.Numerical simulations demonstrate that GaN JBS with a specific on-resistance(R_(on,sp)) of 2.07 mΩ·cm^(2) and a BV of 4171 V which is 167% higher than the breakdown voltage of the common structure,resulting in a high figure-of-merit(FOM) of 8.6 GW/cm^(2),and a low turn-on voltage of 0.6 V.

关键词： GaN junction barrier Schottky diode compound dielectric breakdown voltage turn-on voltage

A charge allocating model for the breakdown voltage calculation and optimization of the lateral RESURF devices

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Journal of Semiconductors 2009年第3期30卷 59-62页

作者：李小刚冯志成张正元胡明雨 No.24 Research Institute of China Electronics Technology Group Corporation National Laboratory of Analog IC

A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF （reduced surface field） structure. It agrees well with the results of numerical simulation on predicting the breakdown voltage. Compared with the latest published analytical model, this model has a better accuracy according to the numerical simulation with simpler form. The optimal doping concentration （per unit area） of the epi-layer of the RESURF structures with different structure parameters has been calculated based on this model and the results show no significant discrepancy to the data gained by others. Additionally the physical mechanism of how the surface field is reduced is clearly illustrated by this model.

关键词： RESURF devices analytical model breakdown voltage device optimization

A novel high-voltage device structure with an N^+ ring in substrate and the breakdown voltage model

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Journal of Semiconductors 2011年第12期32卷 76-79页

作者：李琦朱金鸾王卫东岳宏卫晋良念 Guangxi Key Laboratory of Information and Communication Guilin University of Electronic Technology Guilin Strong Micro Electronics Co.Ltd

A novel high-voltage device structure with a floating heavily doped N＋ ring embedded in the substrate is reported, which is called FR LDMOS. When the N＋ ring is introduced in the device substrate, the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N ＋ ring junction, and the vertical breakdown characteristic is improved significantly. Based on the Poisson equation of cylindrical coordinates, a breakdown voltage model is developed. The numerical results indicate that the breakdown voltage of the proposed device is increased by 56% in comparison to conventional LDMOS.

关键词： floating ring model breakdown voltage modulation

Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator

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Chinese Physics B 2018年第4期27卷 529-535页

作者：陈雪汪志刚王喜 James B Kuo School of Information Science and Technology Southwest Jiao Tong University Chengdu 611756 China "National" Taiwan University Talpei China

An improved vertical power double-diffused metal–oxide–semiconductor（DMOS） device with a p-region（P1） and high-κ insulator vertical double-diffusion metal–oxide–semiconductor（HKP-VDMOS） is proposed to achieve a better performance on breakdown voltage（BV）/specific on-resistance（Ron,sp） than conventional VDMOS with a high-κ insulator（CHK-VDMOS）.The main mechanism is that with the introduction of the P-region,an extra electric field peak is generated in the drift region of HKP-VDMOS to enhance the breakdown voltage.Due to the assisted depletion effect of this p-region,the specific on-resistance of the device could be reduced because of the high doping density of the N-type drift region.Meanwhile,based on the superposition of the depleted charges,a closed-form model for electric field/breakdown voltage is generally derived,which is in good agreement with the simulation result within 10% of error.An HKP-VDMOS device with a breakdown voltage of 600 V,a reduced specific on-resistance of 11.5 Ωm·cm^2 and a figure of merit（FOM）（BV^2/Ron,sp）of 31.2 MW·cm^-2 shows a substantial improvement compared with the CHK-VDMOS device.

关键词： superposition HKP-VDMOS breakdown voltage specific on-resistance

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

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Chinese Physics B 2016年第2期25卷 421-425页

作者：罗俊赵胜雷宓珉瀚陈伟伟侯斌张进成马晓华郝跃 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University School of Advanced Materials and Nanotechnology Xidian University

The effects of gate length L_G on breakdown voltage VBRare investigated in AlGaN/GaN high-electron-mobility transistors（HEMTs） with L_G= 1 μm^20 μm. With the increase of L_G, VBRis first increased, and then saturated at LG= 3 μm. For the HEMT with L_G= 1 μm, breakdown voltage VBRis 117 V, and it can be enhanced to 148 V for the HEMT with L-_G= 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage.A similar suppression of the impact ionization exists in the HEMTs with LG〉 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG= 3 μm^20 μm, and their breakdown voltages are in a range of 140 V–156 V.

关键词： A1GaN/GaN high-electron-mobility transistors （HEMTs） breakdown voltage gate length

Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

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Chinese Physics B 2013年第4期22卷 471-475页

作者：郑直李威李平 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A non-depletion floating layer silicon-on-insulator （NFL SOI） lateral double-diffused metal–oxide–semiconductor （LDMOS） is proposed and the NFL-assisted modulated field （NFLAMF） principle is investigated in this paper. Based on this principle, the floating layer can pin the potential for modulating bulk field. In particular, the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer （BOX）. At variation of back-gate bias, the shielding charges of NFL can also eliminate back-gate effects. The simulated results indicate that the breakdown voltage （BV） is increased from 315 V to 558 V compared to the conventional reduced surface field （RESURF） SOI （CSOI） LDMOS, yielding a 77% improvement. Furthermore, due to the field shielding effect of the NFL, the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.

关键词： breakdown voltage back-gate bias effect self-heating effect silicon-on-insulator