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Sulfur-doped graphene nanoribbons with a sequence of distinct band gaps

Nano Research 2017年第10期10卷 3377-3384页

作者： Yan-Fang Zhang Yi Zhang Geng Li Jianchen Lu Yande Que Hui Chen Reinhard Berger Xinliang Feng Klaus Müllen Xiao Lin Yu-Yang Zhang Shixuan Du Sokrates T. Pantelides Hong-Jun Gao Institute of Physics & University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China Max Planck Institute for Polymer Research Ackermannweg 10 D-55128 Mainz Germany Center for Advancing Electronics Dresden (cfaed) & Department of Chemistry and Food Chemistry Technische Universitat Dresden D-01069 Dresden Germany School of Chemistry and Chemical Engineering Shanghai Jiao Tong University Shanghai 200240 China Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science Vanderbilt University Nashville Tennessee 37235 USA

Unlike graphene sheets, graphene nanoribbons （GNRs） can exhibit semiconducting band gap characteristics that can be tuned by controlling impurity doping and the GNR widths and edge structures. However, achieving such control is a major challenge in the fabrication of GNRs. Chevron-type GNRs were recently synthesized via surface-assisted polymerization of pristine or N-substituted oligophenylene monomers. In principle, GNR heterojunctions can be fabricated by mixing two different monomers. In this paper, we report the fabrication and characterization of chevron-type GNRs using sulfur-substituted oligophenylene monomers to produce GNRs and related heterostructures for the first time. First-principles calculations show that the GNR gaps can be tailored by applying different sulfur configurations from cyclodehydrogenated isomers via debromination and intramolecular cyclodehydrogenation. This feature should enable a new approach for the creation of multiple GNR heterojunctions by engineering their sulfur configurations. These predictions have been confirmed via scanning tunneling microscopy and scanning tunneling spectroscopy. For example, we have found that the S-containing GNRs contain segments with distinct band gaps, i.e., a sequence of multiple heterojunctions that results in a sequence of quantum dots. This unusual intraribbon heterojunction sequence may be useful in nanoscale optoelectronic applications that use quantum dots.

关键词： bottom-up fabrication chevron-type graphene nanoribbons nanoscale quantum dots scanning tunneling microscopy density functional theory

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Schottky barrier-based silicon nanowire pH sensor with live sensitivity control

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Nano Research 2014年第2期7卷 263-271页

作者： Felix M. Zorgiebel Sebastian Pregl Lotta Romhildtt Jorg Opitz W. Weber T. Mikolajick Larysa Baraban Gianaurelio Cuniberti Institute for Materials Science and Max Bergmann Center ofBiomaterials TU Dresden 01062 Dresden Germany NaMLab GmbH 01187 Dresden Germany Fraunhofer Institute IZFP Dresden 01109 Dresden Germany Institute for Semiconductors and Microsystems Technology TU Dresden 01187 Dresden Germany Dresden Germany Center forAdvancing Electronics Dresden TU Dresden 01062 Dresden Germany

We demonstrate a pH sensor based on ultrasensitive nanosize Schottky junctions formed within bottom-up grown dopant-flee arrays of assembled silicon nanowires. A new measurement concept relying on a continuous gate sweep is presented, which allows the straightforward determination of the point of maximum sensitivity of the device and allows sensing experiments to be performed in the optimum regime. Integration of devices into a portable fluidic system and an electrode isolation strategy affords a stable environment and enables long time robust FET sensing measurements in a liquid environment to be carried out. Investigations of the physical and chemical sensitivity of our devices at different pH values and a comparison with theoretical limits are also discussed. We believe that such a combination of nanofabrication and engineering advances makes this Schottky barrier-powered silicon nanowire lab-on-a-chip platform suitable for efficient biodetection and even for more complex biochemical analysis.

关键词： silicon nanowires field effect transistor sub-threshold regime nanosensors pH sensor bottom-up fabrication maximum sensitivity ofsensor

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