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Inhibiting the bipolar effect via band gap engineering to improve the thermoelectric performance in n-type Bi_(2-x)Sb_(x)Te_(3)for solid-state refrigeration

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Journal of Materials Science & Technology 2023年第7期138卷 50-58页

作者： Dongliang Su Jiahui Cheng Shan Li Shengnan Zhang Tu Lyu Chaohua Zhang Junqin Li Fusheng Liu Lipeng Hu College of Materials Science and Engineering Shenzhen Key Laboratory of Special Functional MaterialsGuangdong Research Center for Interfacial Engineering of Functional MaterialsGuangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and UtilizationInstitute of Deep Earth Sciences and Green EnergyShenzhen UniversityShenzhen 518060China Superconducting Materials Research Center Northwest Institute for Nonferrous Metal ResearchXi’an 710016China

To date,the benchmark Bi_(2)Te_(3)-based alloys are still the only commercial material system used for ther-moelectric solid-state ***,the conspicuous performance imbalance between the p-type Bi_(2-x)Sb_(x)Te_(3)and n-type Bi_(2)Te_(3-x)Se_(x) legs has become a major obstacle for the improvement of cooling devices to achieve higher *** our previous study,novel n-type Bi_(2-x)Sb_(x)Te_(3)alloy has been pro-posed via manipulating donor-like effect as an alternative to mainstream n-type Bi_(2)Te_(3-x)Se_(x).However,the narrow bandgap of Bi_(2-x)Sb_(x)Te_(3)provoked severe bipolar effect that constrained the further improvement of zT near room ***,we have implemented band gap engineering in n-type Bi_(1.5)Sb_(0.5)Te_(3)by employing isovalent Se substitution to inhibit the undesired intrinsic excitation and achieve the dis-tinguished room-temperature ***,the preferential occupancy of Se at Te^(2)site appropriately enlarges the band gap,thereby concurrently improving the Seebeck coefficient and depressing the bipolar thermal *** addition,the Se alloying mildly suppresses the compensation mechanism and essentially preserves the already optimized carrier concentration,which maintains the peak zT near room ***,the large strain field and mass fluctuation generated by Se alloying leads to the remark-able reduction of lattice thermal ***,the zT value of Bi_(1.5)Sb_(0.5)Te_(2.8)Se_(0.2)reaches 1.0 at 300 K and peaks 1.1 at 360 K,which surpasses that of most well-known room-temperature n-type thermoelectric *** results pave the way for n-type Bi_(2-x)Sb_(x)Te_(3)alloys to become a new and promising top candidate for large-scale solid-state cooling applications.

关键词： Thermoelectric Bi_(2)Te_(3) Band gap bipolar effect Point defects

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Experimental characterization of the bipolar effect on P-hit single-event transients in 65 nm twin-well and triple-well CMOS technologies

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Science China(Technological Sciences) 2016年第3期59卷 488-493页

作者： CHEN JianJun LIANG Bin CHI YaQing School of Computer National University of Defense Technology

Single-event charge collection is controlled by drift, diffusion and the bipolar effect. Previous work has established that the bipolar effect is significant in the p-type metal-oxide-semiconductor field-effect transistor(PMOS) in 90 nm technology and above. However, the consequences of the bipolar effect on P-hit single-event transients have still not completely been characterized in 65 nm technology. In this paper, characterization of the consequences of the bipolar effect on P-hit single-event transients is performed by heavy ion experiments in both 65 nm twin-well and triple-well complementary metal-oxide-semiconductor(CMOS) technologies. Two inverter chains with clever layout structures are explored for the characterization. Ge(linear energy transfer(LET) = 37.4 Me V cm^2/mg) and Ti(LET = 22.2 Me V cm^2/mg) particles are also employed. The experimental results show that with Ge(Ti) exposure, the average pulse reduction is 49 ps(45 ps) in triple-well CMOS technology and 42 ps(32 ps) in twin-well CMOS technology when the bipolar effect is efficiently mitigated. This characterization will provide an important reference for radiation hardening integrated circuit design.

关键词： single event transient (SET) bipolar effect quantitative characterization

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Enhanced thermoelectric performance in Ga_(x)Co_(4)Sb_(12.3-y)Te_(y) skutterudites via suppressing bipolar effects for commercial application

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Journal of Materiomics 2020年第2期6卷 240-247页

作者： Jing Jiang Rui Zhang Chengcheng Yang Yi Niu Ting Zhou Yan Pan Chao Wang Clean Energy Materials and Engineering Center State Key Laboratory of Electronic Thin Film and Integrated DeviceSchool of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu611731China

The n-type filled and doped skutterudites Ga_(x)Co_(4)Sb_(12.3) and Ga_(0.2)Co_(4)Sb_(11.3)Te composites with the welldistributed GaSb nanoinclusions are synthesized through the manipulating of metastable Ga fillers and enrichment of Sb by an in-situ method with a proper annealing *** atoms can fill the icosahedron cages of skutterudite at high temperature,but at low temperature,they are driven out from the lattice voids and form the second phase of GaSb at grain *** presence of GaSb second phases reduces the thermal conductivity *** doping leads to a significant increase in carrier concentration of Ga_(0.2)Co_(4)Sb_(11.3)Te,thus largely suppresses the bipolar effect of Ga_(x)Co_(4)Sb_(12.3),resulting in a great enhancement in power ***,Te doping induces mass and strain fluctuation,which decreases the lattice thermal conductivity ***,the maximum ZT is increased from 0.56 for Ga_(0.2)Co_(4)Sb_(12.3) at 573 K to 1.48 for Ga_(0.2)Co_(4)Sb_(11.3)Te at 873 K,which is advantageous to improve the thermoelectric conversion efficiency for commercial application.

关键词： Thermoelectric Skutterudite Second phase bipolar effect

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