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Chinese Journal of Electronics 2021年第1期30卷 192-198页

作者： LI Linqing ZHU Haoran NING Xingyu LI Zunwen WU Xianliang Key Lab of Intelligent Computing and Signal Processing Ministry of Education Anhui University

A miniaturized reconfigurable bandpass chip filter with semi-lumped topology and Gallium Arsenide pseudomorphic High electron mobility transistor（GaAs pHEMT） technology is proposed. Semi-lumped topology is employed to instead the traditional lumped inductor with microstrip transmission line, which can reduced the size of the tunable filter significantly. Three-order series and shunt resonated bandpass filter is implemented with shorted stubs and metal-insulator-metal capacitors. Two transmission zeros are introduced with the series resonator and the shunted GaAs FET. By tuning the gate bias circuit of the FET, the capacitance of the series resonator is changed and the bandwidth of the filter is adjusted correspondingly. An equivalent circuit model is developed to interpret the mechanism of the proposed filter circuit. A reconfigurable on chip filter sample operated at 10 GHz is fabricated to validate the design. Two fractional bandwidth of 14.3% and 23.5% are tuned with bias voltage of the FET, while insertion loss of 2.4 d B and 2.2 d B are observed with the filter, respectively. The area of the chip filter is 0.86 × 0.96 mm2and is equivalent to an electrical length of 0.08 × 0.09λg2at center frequency. Measurement results agree well with the simulation ones.

关键词： gallium arsenide tunable filter transmission zeros equivalent circuit model resonator filters shunted FET III-V semiconductors miniaturized bandwidth reconfigurable bandpass chip filter MIM devices microstrip transmission line chip filter sample shunt resonated bandpass filter metal-insulator-metal capacitors semilumped topology loss 2.4 dB Gallium Arsenide pseudomorphic High electron mobility transistor technology insertion loss filter circuit integrated circuit design GaAs integrated circuit manufacture frequency 10.0 GHz pHEMT technology microwave filters loss 2.2 dB HEMT integrated circuits series resonator miniaturized reconfigurable bandpass chip filter band-pass filters

220 GHz Multi Circuit Integrated Front End Based on Solid-State Circuits for High Speed Communication System

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Chinese Journal of Electronics 2022年第3期31卷 569-580页

作者： NIU Zhongqian ZHANG Bo DAI Bingli ZHANG Jicong SHEN Fang HU Yi FAN Yong ZHANG Yihan School of Electronic Science and Engineering University of Electronic Science and Technology of China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China

This paper presents the research on a 220 GHz multi circuit inte-grated front end based on solidstate circuits. This integrated front end integrates a 220 GHz subharmonic mixer, a 110 GHz tripler, a 110 GHz 8 d B hybrid coupler and a 220 GHz waveguide bandpass filter(BPF) in one single block. Compared to the traditional transceivers which usually use cascade connection of the independent mixers and multipliers, the size of the proposed multi circuit integrated front-end block is 25 mm × 20 mm × 20 mm, ten times smaller than the cascading transceiver. In order to check the tripler’s output power, a modified compact 110 GHz 8 d B hybrid coupler is set between mixer and tripler. Due to the characteristics of the hybrid coupler, the deterioration of cascading transceiver’s performance caused by mismatch has also been improved. In addition, to achieve single sideband(SSB) communication, a 220 GHz BPF with high selectivity is integrated in the circuit. The measured conversion loss of the fabricated multi circuit integrated front end is less than 11 d B, where the LO and RF frequency are 37 and 210-220 GHz. Based on this front-end, a 220 GHz high speed communication system has been setup and it can achieve 10 Gbps data transmission using 16 QAM modulation.

关键词： BPF compact hybrid coupler traditional transceivers millimetre wave frequency convertors solid-state circuits frequency multipliers multipliers waveguide bandpass filter millimetre wave mixers cascading transceiver performance conversion loss multicircuit integrated front-end block millimetre wave couplers SSB communication subharmonic mixer 16QAM modulation high speed communication system independent mixers radio transceivers cascade connection band-pass filters single sideband communication

Characteristic Mode Design of Dual-band Reconfigurable Frequency Selective Surface

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Chinese Journal of Electronics 2022年第6期31卷 1129-1137页

作者： NING Zihao LI Mengmeng DING Dazhi AI Xia LIU Jiaqi Department of Communication Engineering Nanjing University of Science and Technology National Key Laboratory of Science and Technology on Test Physics and Numerical Mathematics

In this paper, a characteristic mode design of dual-band reconfigurable frequency selective surface(RFSS) with transmission/reflection band is presented. Through the visualization of modal behavior, the theory of characteristic modes(TCM) is used to guide design from a physical perspective. At first, the dominant modes of two basic structures that have a major impact on reflection are clarified by observing the modal *** appropriate combination of the two structures forms an initial element with bandpass properties. Then, the positive-intrinsic-negative(PIN) diode is placed in the middle of the microstrip line and as the state shifts from ON to OFF, the dominant mode resonant frequency of the microstrip line shifts upward. Such a feature can be used to design the transmission/reflection RFSS. Experimentally, a dual-band RFSS operating at 8.8 GHz and 10.4 GHz is designed and fabricated. The measured results that agree with the full-wave simulation validate the proposed TCM-based design.

关键词： dual-band reconfigurable frequency selective surface dual-band RFSS positive-intrinsic-negative diode theory of characteristic modes characteristic mode design full-wave simulation transmission band p-i-n diodes modal behavior visualization bandpass properties microstrip lines microstrip line dominant mode resonant frequency PIN diode microwave filters frequency selective surfaces TCM-based design reflection band transmission RFSS microwave diodes band-pass filters microstrip filters reflection RFSS

Design and Realization of Broadband Active Inductor Based band pass Filter

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Chinese Journal of Electronics 2023年第4期32卷 731-735页

作者： Aysu Belen Mehmet A.Belen Merih Paland?ken Peyman Mahouti ?zlem Tari Hybrid and Electric Vehicle Technology Iskenderun Technical University 2. Department of Electrical Electronic Engineering ?skenderun Technical University Department of Electrical Electronic Engineering ?zmir Katip ?elebi Universtiy Department of Aviation Electrics and Electronics Engineering Y?ld?z Technical University Davutpa?a Department of Mathematics and Computer Science ?stanbul Arel University

With the latest developments in the wireless communication systems, the alternative design methodologies are required for the broadband design of microwave components. In this paper, a compact broad band pass filter(BPF) design is introduced through the microwave design technique based on the active inductor(AIN) with the numerical computation and experimental measurement studies. The proposed AIN based BPF has operating frequency band extending from 0.8 GHz to 2.7GHz in compact size with high selectivity in comparison to conventional LC based BPF. The experimental measurement results agree well with the numerical computation results. The proposed AIN based BPF design has technical capability to be conveniently tuned to operate at different frequency bands.

关键词： band-pass filters Microwave measurement Wireless communication Radio frequency Active inductors Insertion loss Microwave communication

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Miniaturized, Wide Stopband Filter Based on Shielded Capacitively Loaded SIW Resonators

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Chinese Journal of Electronics 2024年第2期33卷 456-462页

作者： Yan ZHENG Hanyu TIAN Yuandan DONG University of Electronic Science and Technology of China (UESTC)

Based on the full-mode capacitively loaded substrate integrated waveguide（SIW） resonator and the miniaturized shielded half-mode capacitively loaded SIW（S-HMCSIW） cavities, a novel compact high-performance filter is proposed. The footprint of the half-mode SIW（HMSIW） is further reduced due to the application of the capacitive-loading technique. By applying cross coupling, the proposed SIW filter's transmission zero enhances the stopband rejection and shows excellent selectivity. For the bandpass filter, the measured |S21| and |S11| are better than 1.09 d B and-14 d B, respectively. And a 3-d B fractional bandwidth（FBW） of 9.14–10.76 GHz（FBW=16.2%）is also observed. The filter achieves a wide stopband with a-20 d B out-of-band rejection up to 2.69f0（f0= 10 GHz）,with a size of 0.39λg× 0.51λgonly. Good agreement between measurement and simulation is obtained.

关键词： band-pass filters Wireless communication Couplings Resonator filters Microwave theory and techniques Filtering theory passband

Numerical Study of Soliton Storage Rings

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Numerical Study of Soliton Storage Rings