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Effects of Nanostructured back reflectors on the External Quantum Efficiency in Thin Film Solar Cells

Nano Research 2011年第2期4卷 153-158页

作者： Chingmei Hsu George F. Burkhard Michael D. McGehee Yi Cui Department of Materials Science and Engineering Stanford University Stanford California 94305 USA Department of Applied Physics Stanlbrd University Stanlbrd California 94305 USA

Hydrogenated amorphous Si （a-Si：H） is a promising material for photovoltaic applications due to its low cost, high abundance, long lifetime, and non-toxicity. We demonstrate a device designed to investigate the effect of nanostructured back reflectors on quantum efficiency in photovoltaic devices. We adopt a superstrate configuration so that we may use conventional industrial light trapping strategies for thin film solar cells as a reference for comparison. We controlled the nanostructure parameters via a wafer-scale self-assembly technique and systematically studied the relation between nanostructure size and photocurrent generation. The gain/loss transition at short wavelengths showed red-shifts with decreasing nanostructure scale. In the infrared region the nanostructured back reflector shows large photocurrent enhancement with a modified feature scale. This device geometry is a useful archetype for investigating absorption enhancement by nanostructures.

关键词： Solar cells back reflector scattering solar energy amorphous silicon

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Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si：H/a-SiGe：H tandem solar cells

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Chinese Physics B 2016年第4期25卷 243-248页

作者：李天天杨铁方家张德坤孙建魏长春许盛之王广才刘彩池赵颖张晓丹 Institute of Photo-electronic Thin Film Device and Technique Nankai University Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University School of Material Science and Engineering Hebei University of Technology

Phosphorous-doped hydrogenated nanocrystalline silicon oxide （n-nc-SiOx：H） films are prepared via radio frequency plasma enhanced chemical vapor deposition （RF-PECVD）. Increasing deposition power during n-nc-SiOx：H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiOx：H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiOx matrix with higher crystalline volume fraction （Ic） and have a lower lateral conductivity. This uniform microstructure indicates that the higher Ic can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si：H/a-SiGe：H tandem solar cells acting as an n-nc-SiOx：H back reflector prepared by the gradient power during deposition. Compared with the sample with SiOx back reflector, with a constant power used in deposition process, the sample with gradient power SiOx back reflector can enhance the total short-circuit current density （Jsc） and the initial efficiency of a-Si：H/a-SiGe：H tandem solar cells by 8.3% and 15.5%, respectively.

关键词： gradient deposition power n-nc-SiOx:H films back reflector Tandem solar cells

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