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Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes

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Frontiers of Optoelectronics 2018年第4期11卷 400-406页

作者： Yanli ZHAO Junjie TU Jingjing XIANG Ke WEN Jing XU Yang TIAN Qiang LI Yuchong TIAN Runqi WANG Wenyang LI Mingwei GUO Zhifeng LIU Qi TANG Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China Wuhan Aroptics-Tech Co. LTDWuhan 430074China Sichuan Branch China Unicom Network Communications Co.LtdChengdu 610041China

Based on the newly proposed temperature dependent dead space model, the breakdown voltage and bandwidth of InP/InGaAs avalanche photodiode (APD) have been investigated in the temperature range from -50°C to 100°C. It was demonstrated that our proposed model is consistent with the experimental results. Our work may provide a guidance to the design of APDs with controllably low temperature coefficient.

关键词： optical communication separate absorption grading charge and multiplication avalanche photodiode (SAGCM APD) dead space effect temperature coefficient CHARGES Breakdown voltage Bandwidth grade Electric charge Guidance temperature factor Grading avalanche photodiodes Dead band Optical communication low temperature coefficient

Detection performance of trigger-controlled Geiger-mode avalanche photodiodes in weak optical signal detection

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Chinese Optics Letters 2016年第4期14卷 81-85页

作者：赵鹏袁亚博张艳钱卫平 Beijing Institute of Tracking and Telecommunications Technology Beijing 100094 China Key Laboratory of Space Object Measurement Beijing 100094 Chine

This Letter introduces a trigger-controlled Geiger-mode avalanche photodiode （GM-APD）. A hierarchical look- back-upon tree recurrence method is given to predict the performance of trigger-controlled GM-APDs under different trigger-count upper limits. In addition, the normalized detection probability is defined to evaluate the detection performance of trigger-controlled GM-APDs in typical weak optical signal detection （impulse noise and continuous noise situations）. Theoretical analyses show that the trigger-controlled GM-APD improves the detection performance of GM-APDs in weak optical signal detection via the optimization of the trigger-count upper limit, compared with single-trigger and multi-trigger GM-APDs.

关键词： avalanche photodiodes Geiger counters Impulse noise Optical signal processing photodiodes

Recent progress of SiC UV single photon counting avalanche photodiodes

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Journal of Semiconductors 2019年第12期40卷 59-69页

作者： Linlin Su Dong Zhou Hai Lu Rong Zhang Youdou Zheng School of Electronic Science and Engineering Nanjing University

4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high quantum efficiency,which benefit from the large bandgap energy,high carrier drift velocity and excellent physical stability of 4 H-SiC semiconductor material.UV detectors are widely used in many key applications,such as missile plume detection,corona discharge,UV astronomy,and biological and chemical agent detection.In this paper,we will describe basic concepts and review recent results on device design,process development,and basic characterizations of 4 H-SiC avalanche photodiodes.Several promising device structures and uniformity of avalanche multiplication are discussed,which are important for achieving high performance of 4 HSiC UV SPADs.

关键词： SiC avalanche photodiodes single photon counting ultraviolet detection

Short-wavelength infrared InAs/GaSb superlattice hole avalanche photodiode

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Chinese Physics B 2020年第11期29卷 469-472页

作者：刘家丰张宁涛滕 郝修军赵宇陈影朱赫朱虹吴启花李欣陈佰乐黄勇 School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China School of Information Science and Technology ShanghaiTech UniversityShanghai 201210China

We demonstrate two short-wavelength infrared avalanche photodiodes based on InAs/GaSb superlattice grown by metal-organic chemical vapor deposition.The difference between the two devices,namely,p+n-n+and p+nn-n+,is that the p+nn-n+device possesses an additional middle-doped layer to separate the multiplication region from the absorption region.By properly controlling the electric field distribution in the p+nn-n+device,an electric field of 906 kV/cm has been achieved,which is 2.6 times higher than that in the p+n-n+device.At a reverse bias of-0.1 V at 77 K,both devices show a 100%cut-off wavelength of 2.25μm.The p+n-n+and p+nn-n+show a dark current density of 1.5×10^-7 A/cm^2 and 1.8×10^-8 A/cm^2,and a peak responsivity about 0.35 A/W and 0.40 A/W at 1.5μm,respectively.A maximum multiplication gain of 55 is achieved in the p+nn-n+device while the value is only less than 2 in the p+n-n+device.Exponential nature of the gain characteristic as a function of reverse bias confirms a single carrier hole dominated impact ionization.

关键词： short-wavelength infrared InAs/GaSb superlattice avalanche photodiodes metal-organic chemical vapor deposition

avalanche photodetectors based on two-dimensional layered materials

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Nano Research 2021年第6期14卷 1878-1888页

作者： Jinshui Miao Chuan Wang State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China Department of Electrical and Systems Engineering Washington University in St.LouisSt.LouisMissouri63130USA

The past decade has witnessed a dramatic increase in interest in emerging photodetectors built from two-dimensional(2D)layered materials.A major driver of this trend is the growing demands for lightweight,uncooled,and even flexible photodetection technology.However,2D layered materials always suffer from low light absorption coefficients due to their atomically thin nature.Impact ionization,which can achieve carrier multiplication,is a promising strategy to design 2D photodetectors with high detection efficiency.In this review,typical types of photodetection mechanisms in 2D photodetectors are first summarized.We then discuss the avalanche mechanism induced by impact ionization and avalanche photodetectors based on conventional silicon and III–V compound semiconductors.Finally,a host of emerging avalanche photodetectors based on 2D materials and their van der Waals heterostructures,and their potential applications in the field of photon-counting technologies are detailed.By reviewing the recent progress and discussing challenges faced by 2D avalanche photodetectors,this review aims to provide perspectives on future research directions of 2D material-based ultrasensitive photodetectors such as single-photon detectors.

关键词： two-dimensional materials van der Waals heterostructures photodetectors impact ionization avalanche photodiodes single-photon detectors

Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode

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Chinese Optics Letters 2016年第3期14卷 5-8页

作者：师亚帆李召辉冯百成颜佩琴杜秉乘周慧潘海峰吴光 State Key Laboratory of Precision Spectroscopy East China Normal University State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Solar-blind ultraviolet detection is of great importance in astronomy and industrial and military applications. Here, we report enhanced solar-blind ultraviolet single-photon detection by a normal silicon avalanche photo- diode （Si APD） single-photon detector with a specially designed photon-collecting device. By re-focusing the reflected photon from the Si chip surface on the detection area by the aluminum-coated hemisphere, the detec- tion efficiency of the Si APD at 280 nm can be improved to 4.62%. This system has the potential for high-efficiency photon detection in the solar-blind ultraviolet regime with low noise.

关键词： Aluminum coatings avalanche photodiodes Efficiency Military applications Photodetectors photodiodes Photons Silicon

Long-range laser ranging using superconducting nanowire single-photon detectors

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Chinese Optics Letters 2016年第7期14卷 42-46页

作者：薛莉李明张蜡宝翟东升李祝莲康琳李语强伏红林明名张森陶旭熊耀恒吴培亨 Key Laboratory for Space Object Measurements Beijing Institute of Tracking and Telecommunications TechnologyBeijing 100094China Research Institute of Superconductor Electronics Nanjing UniversityNanjing 210093China Yunnan Observatory Chinese Academy of SciencesKunming 650011China Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China

We demonstrate laser-ranging results for non-cooperative targets at ranges of 237 m and 19 km using superconducting nanowire single-photon detectors （SSPD）. We upgrade the kilohertz rate laser-ranging system with a newly developed SSPD module, and the equivalent detection diameter is enlarged to 50 gm with a fiber and micro-lenses. Both retroreflectors and non-cooperative surfaces of aluminum foil, a solar panel, and a concrete panel at distances of 237 m and 19 km, whose echoes are of single-photon level, are ranged with sub-centimeter precision. Experimental signal-to-noise ratio curves with the product of quantum efficiency and system transmittance are obtained, which indicates that our system, with an average laser power of 0.8 W and a receiving aperture of 1.2 m, may be capable for space debris ranging at a distance of 800 km. This work suggests that SSPDs have the potential to be used for space debris surveillance.

关键词： avalanche photodiodes Concrete slabs Microlenses Nanowires Photodetectors Photons Precast concrete Signal to noise ratio Space debris

A high-speed avalanche photodiode

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Journal of Semiconductors 2014年第7期35卷 73-77页

作者：李彬杨晓红尹伟红吕倩倩崔荣韩勤 State Key Laboratory of Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences

High-speed avalanche photodiodes are widely used in optical communication systems. Nowadays, separate absorption charge and multiplication structure is widely adopted. In this article, a structure with higher speed than separate absorption charge and multiplication structure is reported. Besides the traditional absorption layer, charge layer and multiplication layer, this structure introduces an additional charge layer and transit layer and thus can be referred to as separate absorption, charge, multiplication, charge and transit structure. The introduction of the new charge layer and transit layer brings additional freedom in device structure design. The benefit of this structure is that the carrier transit time and device capacitance can be reduced independently, thus the 3 dB bandwidth could be improved by more than 50% in contrast to the separate absorption charge and multiplication structure with the same size.

关键词： avalanche photodiodes photodetector high speed

Ultra-low detection delay drift caused by the temperature variation in a Si-avalanche-photodiode-based single-photon detector

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Chinese Optics Letters 2021年第8期19卷 90-94页

作者：王煜蓉汪琳莉吴琛怡李召辉杨雷吴光 State Key Laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200241China

We report a method to reduce the detection delay temperature drift for a single-photon detector based on the avalanche photodiode(SPAD). Both the SPAD and the comparator were temperature stabilized, resulting in an ultra-low temperature drift at 0.01 ps/°C. A stable time deviation as 0.15 ps over 1000 s was realized, while the ambient temperature fluctuated rapidly from 24°C to 44°C. To the best of our knowledge, this is the first report on the ultra-stable delay SPAD detector in the case of rapid increase or decrease of ambient temperature. It is helpful to improve the stability of onboard detectors for optical laser time transfer between ground and space.

关键词： avalanche photodiodes laser ranging single-photon detection stability temperature dependence