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Determination of the atomic density of rubidium-87

Chinese Physics B 2015年第9期24卷 245-249页

作者：赵盟张凯陈丽清 State Key Laboratory of Precision Spectroscopy Department of PhysicsEast China Normal University

atomic density is a basic and important parameter in quantum optics, nonlinear optics, and precision *** the past few decades, several methods have been used to measure atomic density, such as thermionic effect, optical absorption, and resonance fluorescence. The main error of these experiments stemmed from depopulation of the energy level, self-absorption, and the broad bandwidth of the laser. Here we demonstrate the atomic density of^87 Rb vapor in paraffin coated cell between 297 K and 334 K mainly using fluorescence measurement. Optical pumping, anti-relaxation coating, and absorption compensation approaches are used to decrease measurement error. These measurement methods are suitable for vapor temperature at dozens of degrees. The fitting function for the experimental data of87 Rb atomic density is given.

关键词： atomic density 87 Rb vapor fluorescence absorption compensation

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An MD Study of the Temperature Effect on H Interacting with SiC （100）

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Plasma Science and Technology 2012年第12期14卷 1121-1124页

作者： SUN Weizhong ZHAO Chengli ZHANG Junyuan CHEN Feng GOU Fujun Key Laboratory of Radiation Physics and Technology Ministry of Education Institute of Nuclear Science and Technology Sichuan University Chengdu 610064 China Institute of Plasma Surface Interactions Guizhou University Guiyang 550025 China FOM Institute for Plasma Physics 3439 MN Nieuwegein the Netherlands

Molecular dynamics simulations were performed to study the interaction between atomic hydrogen and silicon carbide. In the present study, we focus on the effect of the surface temperature on H interacting with silicon carbide. The simulation results show that the retention of H atoms in the sample decreases linearly with increasing surface temperature. The depth profile analysis shows that the sample is modified by H bombardment, and the density of H atoms is greater than those of Si and C atoms near the interface region between the H-containing region and the bulk. However, near the surface region the densities of H, Si and C atoms are almost equivalent. In the modified layer, the bonds consist of Si-C and Si-H and C-H. The fraction of Si-C bonds is the greatest. Only a few C-H bonds are present.

关键词： molecular dynamics surface temperature retention atomic density bond

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TEMPERATURE DEPENDENCE OF VISCOSITY OF Al-Si ALLOY MELTS

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Acta Metallurgica Sinica(English Letters) 2005年第2期18卷 159-163页

作者： H.R.Geng R.Wang Z.X.Yang J.H.Chen C.J.Sun Y.Wang SchoolofMaterialsScienceandEngineering JinanUniversityJinan250022China SchoolofMaterialsScienceandEngineering ShandongUniversityJinan250061China

The relationship between the viscosity and temperature of Al-Si alloy melts was investigated. The viscosity of three different types of Al-Si alloy melts was measured. It was showed that the relationship between the viscosity and temperature of hypoeutectic Al-5%Si and eutectic Al- 12.5%Si alloy melts is approximately exponential except for some special zones, but that of the hypereutectic melt is different. The paper discussed the correlation of the viscosity and atomic density, which is thought that the viscosity corresponds to the atomic density to some extent.

关键词： Al-Si alloy melt viscosity liquid metal atomic density

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Temperature Effect On H Interacting With SiC(100):MD Study

Temperature Effect On H Interacting With SiC(100):MD Study

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第十五届全国等离子体科学技术会议

作者： SUN Wei-zhong~1,ZHAO Cheng-li~2,ZHANG Jun-yuan~1,LU Xiao-dan~2,F.Gou~(1,3+) (1.Key Laboratory of Radiation Physics and Technology,Ministry of Education Institute of Nuclear Science and Technology,Sichuan University,Chengdu 610064,P.R.China 2.Institute of Plasma Surface Interactions,Guizhou University,550025,Guiyang,P.R.China 3.FOM Institute for Plasma Physics,3439 MN Nieuwegein,The Netherlands)

Molecular dynamics simulations were performed to study interactions between atomic hydrogen and silicon *** present study,we focus on the effect of the surface temperature on H interacting with silicon *** simulation results show that with increasing surface temperature,the retention of H atoms in the sample decreases *** depth profile analysis shows that after the sample is modified by H bombardment,the density of H atoms is greater than those of Si and C atoms near the interface region between the H-containing region and the ***,near the surface region the density of H,Si and C atoms are almost *** the modified layer,the bonds are consisted of Si-C and Si-H and *** fraction of bonds Si-C is the *** few C-H bonds are present.

关键词： molecular dynamic surface temperature retention atomic density bond

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Molecular Dynamic Simulations of the Temperature Effect On H Interacting With SiC Surface

Molecular Dynamic Simulations of the Temperature Effect On H...

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第十四届全国核物理大会暨第十届会员代表大会

作者： SUN Wei-zhong1, ZHAO Chen-li2, LIU Hua-min1, ZHANG Jun-yuan1, LIN Li-wei1, LV Xiao-dang2,PAN Yu-dong3, GOU Fu-jun 1,4? (1.Key Laboratory of Radiation Physics and Technology (Sichuan University), Ministry of Education Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, P. R. China 2. Institute of Plasma Surface Interactions, Guizhou University, 550025, Guiyang, P. R. China 3. Southwestern Institute of Physics, Chengdu 610041, P. R. China 4. FOM Institute for Plasma Physics, 3439 MN Nieuwegein, The Netherlands)

Due to its chemical inertness to hydrogen and its isotopes,high thermal conductivity and high-temperature stability,silicon carbide has been used as plasma-facing materials in tokomak[1-3].Therefore,it is necessary to... 详细信息

关键词： fusion material molecular dynamic retention atomic density bond density

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