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Fin Field Effect Transistor with Active 4-Bit arithmetic Operations in 22 nm Technology

Intelligent Automation & Soft Computing 2023年第2期35卷 1323-1336页

作者： S.Senthilmurugan K.Gunaseelan Department of Electronics and Communication Engineering SRM Valliammai Engineering CollegeChennai603203India Department of Electronics and Communication Engineering College of Engineering GuindyAnna UniversityChennai600025India

A design of a high-speed multi-core processor with compact size is a trending approach in the Integrated Circuits(ICs)fabrication *** whenever device size comes down into narrow,designers facing many power den-sity issues should be reduced by scaling threshold voltage and supply ***,Complementary Metal Oxide Semiconductor(CMOS)technology sup-ports power saving up to 32 nm gate length,but further scaling causes short severe channel effects such as threshold voltage swing,mobility degradation,and more leakage power(less than 32)at gate ***,it directly affects the arithmetic logic unit(ALU),which suffers a signiﬁcant power density of the scaled multi-core ***,it losses reliability features to get overheating and increased *** paper presents a novel power mini-mization technique for active 4-bit ALU operations using Fin Field Effect Tran-sistor(FinFET)at 22 nm *** on this,a diode is directly connected to the load transistor,and it is active only at the saturation region as a ***,the access transistor can cutoff of the leakage current,and sleep transis-tors control theﬂow of leakage current corresponding to each instant ALU *** combination of transistors(access and sleep)reduces the leakage current from micro to ***,the power minimization is achieved by con-necting the number of transistors(6T and 10T)of the FinFET structure to ALU with 22 nm *** simulation concerns,a Tanner(T-Spice)with 22 nm technology implements the proposed design,which reduces threshold vol-tage swing,supply power,leakage current,gate length delay,*** a result,it is quite suitable for the ALU architecture of a high-speed multi-core processor.

关键词： FinFET(22 nm)technology diode connection arithmetic logic unit reduce threshold voltage swing gate length delay leakage power

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