检索结果-南通市图书馆

Understanding and optimizing spin injection in self- assembled InAs/GaAs quantum-dot molecular structures

Nano Research 2016年第3期9卷 602-611页

作者： Yuqing Huang Yuttapoom Puttisong Irina A. Buyanova Weimin M. Chen Department of Physics Chemistry and Biology Link6ping University S-58183 LinkOping Sweden

Semiconductor quantum-dot （QD） structures are promising for spintronic applications owing to their strong quenching of spin relaxation processes that are promoted by carrier and exciton motions. Unfortunately, the spin injection efficiency in such nanostructures is very low and the exact physical mechanism of the spin loss is still not fully understood. Here, we show that exciton spin injection in self-assembled InAs/GaAs QDs and QD molecular structures （QMSs） is dominated by localized excitons confined within the QD-like regions of the wetting layer （WL） and GaAs barrier layer that immediately surround the QDs and QMSs. These localized excitons in fact lack the commonly believed 2D and 3D character with an extended wavefunction. We attribute the microscopic origin of the severe spin loss observed during spin injection to a sizable anisotropic exchange interaction （AEI） of the localized excitons in the WL and GaAs barrier layer, which has so far been overlooked. We determined that the AEI of the injected excitons and, thus, the efficiency of the spin injection processes are correlated with the overall geometric symmetry of the QMSs. This symmetry largely defines the anisotropy of the confinement potential of the localized excitons in the surrounding WL and GaAs barrier. These results pave the way for a better understanding of spin injection processes and the microscopic origin of spin loss in QD structures. Furthermore, they provide a useful guideline to significantly improve spin injection efficiency by optimizing the lateral arrangement of QMSs and overcome a major challenge in spintronic device applications utilizing semiconductor QDs.

关键词： spin injection spin loss quantum dot quantum-dot molecularstructure InAs/GaAs exciton anisotropic exchangeinteraction polarization

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：