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检索条件"主题词=amorphous resistance drift"
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Investigation of time instability factors in TiSbxTe based phase change memory
Investigation of time instability factors in TiSbxTe based p...
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第八届中国功能材料及其应用学术会议
作者: JI Xing-long WU Liang-cai1a RAO Feng SONG Zhitang ZHU Min FENG Songlin State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-system and Information TechnologyChinese Academy of Sciences Graduate School of the Chinese Academy of Sciences
In this paper,the two time instability factors in phase change memory,amorphous resistance drift and spontaneous crystallization process,are studied based on Ti(SbxTe) and Ti(SbxTe).The drift coefficients of both comp... 详细信息
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