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A systematic study of light dependency of persistentphotoconductivity in a-InGaZnO thin-film transistors

Chinese Physics B 2020年第11期29卷 508-515页

作者： Yalan Wang Mingxiang Wang Dongli Zhang Huaisheng Wang School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China

Persistent photoconductivity(PPC)effect and its light-intensity dependence of both enhancement and depletion(E-/D-)mode amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs)are systematically *** of oxygen vacancy(V O)defects of E-mode TFTs is relatively small,in which formation of the photo-induced metastable defects is thermally activated,and the activation energy(E a)decreases continuously with increasing *** of V O defects of D-mode TFTs is much larger,in which the formation of photo-induced metastable defects is found to be spontaneous instead of thermally ***,for the first time it is found that a threshold dose of light-exposure is required to form fully developed photo-induced metastable *** low light-exposure below the threshold,only a low PPC barrier is formed and the PPC recovery is *** increasing the light-exposure to the threshold,the lattice relaxation of metal cations adjacent to the doubly ionized oxygen vacancies(V O^2+)is fully developed,and the PPC barrier increases to∼0.25 eV,which remains basically unchanged under higher *** on the density of V O defects in the channel and the condition of light illumination,a unified model of formation of photo-induced metastable defects in a-IGZO TFTs is proposed to explain the experimental observations.

关键词： amorphous indium-gallium-zinc oxide thin-film transistors persistent photoconductivity lightintensity

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Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors

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Chinese Physics B 2017年第12期26卷 587-590页

作者：齐栋宇张冬利王明湘 Department of Microelectronics Soochow University Suzhou 215006 China

Under the action of a positive gate bias stress, a hump in the subthreshold region of the transfer characteristic is observed for the amorphous indium-gallium-zinc oxide thin film transistor, which adopts an elevated-metal metal-oxide structure. As stress time goes by, both the on-state current and the hump shift towards the negative gate-voltage direction. The humps occur at almost the same current levels for devices with different channel widths, which is attributed to the parasitic transistors located at the channel width edges. Therefore, we propose that the positive charges trapped at the back-channel interface cause the negative shift, and the origin of the hump is considered as being due to more positive charges trapped at the edges along the channel width direction. On the other hand, the hump-effect becomes more significant in a short channel device （L=2 μm）. It is proposed that the diffusion of oxygen vacancies takes place from the high concentration source/drain region to the intrinsic channel region.

关键词： amorphous indium-gallium-zinc oxide thin film transistors positive bias stress hump

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