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Fluoro-substituted DPP-bisthiophene conjugated polymer with azides in the side chains as ambipolar semiconductor and photoresist

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Science China Chemistry 2022年第9期65卷 1791-1797页

作者： Wenlin Jiang Xiaobo Yu Cheng Li Xisha Zhang Guanxin Zhang Zitong Liu Deqing Zhang Beijing National Laboratory for Molecular Sciences Organic Solids LaboratoryInstitute of ChemistryChinese Academy of SciencesBeijing 100190China State Key Laboratory of Applied Organic Chemistry(SKLAOC) Key Laboratory of Special Function Materials and Structure DesignCollege of Chemistry and Chemical EngineeringLanzhou UniversityLanzhou 730000China School of Chemical Sciences University of Chinese Academy of SciencesBeijing 100049China

Photoresists are essential for the fabrication of flexible electronics through all-photolithographic processes.Single component semiconducting photoresist exhibits both semiconducting and photo-patterning properties,and as a result,the device fabrication process can be simplified.However,the design of semiconducting polymeric photoresist with ambipolar semiconducting property remains challenging.In this paper,we report a single component semiconducting photoresist(PFDPPF4T-N_(3))by incorporating azide groups and noncovalent conformation locks into the side alkyl chains and conjugated backbones of a diketopyrrolopyrrole-based conjugated polymer,respectively.The results reveal that PFDPP4FT-N_(3) exhibits ambipolar semiconducting property with hole and electron mobilities up to 1.12 and 1.17 cm^(2) V^(−1) s^(−1),respectively.Moreover,field effect transistors with the individual photo-patterned thin films of PFDPP4FT-N_(3) also show ambipolar semiconducting behavior with hole and electron mobilities up to 0.66 and 0.80 cm^(2) V^(−1) s^(−1),respectively.These results offer a simple yet effective design strategy for high-performance single component semiconducting photoresists,which hold great potential for flexible electronics processed by all-photolithography.

关键词： conjugated polymer ambipolar semiconductor photoresist noncovalent conformation lock diketopyrrolopyrrole

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A field-effect WSe_(2)/Si heterojunction diode

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Chinese Physics B 2023年第1期32卷 592-597页

作者：余睿盛喆胡文楠王越董建国孙浩然程增光张增星 State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China National Integrated Circuit Innovation Center Shanghai 201203China

It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional(2D)materials in silicon roadmap. In this paper, we reported a field-effect WSe_(2)/Si heterojunction diode based on ambipolar 2D WSe_(2) and silicon on insulator(SOI). Our results indicate that the device exhibits a p–n diode behavior with a rectifying ratio of ~300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5×10~(10) Jones and external quantum efficiency(EQE) of 8.9 %.Due to the ambipolar behavior of the WSe_(2), the rectifying and optoelectronic properties of the heterojunction diode can be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.

关键词： two-dimensional material ambipolar semiconductor field-effect transistor optoelectronic device

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Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

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Chinese Physics B 2023年第12期32卷 21-39页

作者：赵月豪孙浩然盛喆张卫周鹏张增星 School of Microelectronics Fudan UniversityShanghai 200433China National Integrated Circuit Innovation Center Shanghai 201203China School of Information Science and Technology Hangzhou Normal UniversityHangzhou 311121China

In these days,the increasing massive data are being produced and demanded to be processed with the rapid growth of information technology.It is difficult to rely solely on the shrinking of semiconductor devices and scale-up of the integrated circuits(ICs)again in the foreseeable future.Exploring new materials,new-principle semiconductor devices and new computing architectures is becoming an urgent topic in this field.ambipolar two-dimensional(2D)semiconductors,possessing excellent electrostatic field controllability and flexibly modulated major charge carriers,offer a possibility to construct reconfigurable devices and enable the ICs with new functions,showing great potential in computing capacity,energy efficiency,time delay and cost.This review focuses on the recent significant advancements in reconfigurable electronic and optoelectronic devices of ambipolar 2D semiconductors,and demonstrates their potential approach towards ICs,like reconfigurable circuits and neuromorphic chips.It is expected to help readers understand the device design principle of ambipolar 2D semiconductors,and push forward exploring more new-principle devices and new-architecture computing circuits,and even their product applications.

关键词： two-dimensional material ambipolar semiconductor semiconductor device

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High Sensitive ambipolar Response towards Oxidizing NO2 and Reducing NH3 Based on Bis（phthalocyaninato） Europium semiconductors

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Chinese Journal of Chemistry 2016年第10期34卷 975-982页

作者： Xia Kong Zhen Dong Yanling Wu Xiyou Li Yanli Chen Jianzhuang Jiang School of Science China University of Petroleum (East China) Qingdao Shandong 266580 China Beymg Key Laboratory for Science and Application of Functional Molecular and Crystalline Materials Department of Chemistry University of Science and Technology Beijing Beijing 100083 China

High sensitive chemical sensors towards NO2 and NH3 based on the self-assembled nanostructures of the heteroleptic and homoleptic bis（phthalocyaninato） europium complexes with octanaphthoxy phthalocyaninato ligands named Eu（Pc）[Pc（ONh）8] （1） and Eu[Pc（ONh）8]2 （2） [Pc = unsubstituted phthalocyaninate; Pc（ONh）8 = 2,3,9,10,16,17,23,24-octanaphthoxy phthalocyaninate] have been developed. The good conductivity, high crystal- linity and large specific surface area for the self-assemblies of 1 render it excellent sensing property for either electron-accepting gas NO2 in 50--250 ppb range or electron-donating gas NH3 in 2.5--12.5 ppm range due to the optimized molecular packing in the uniform-sized nanopartieles depending on the effective intermolecular interaction between double-decker molecules, among the best results of phthalocyanine-based chemical sensors for detection of NO2 and NH3 at room temperature. Interestingly, self-assemblies of I exhibited n-type response to NO2 and p-type response to NH3, which is the first example of ambipolar charge-transporting gas sensors fabricated from single- component organic semiconductors. However, the self-assemblies of 2 with sixteen bulky naphtboxy groups at the periphery of two Pc rings only present an n-type response to strong oxidant gas NO2 in a relatively high concentration of 0.5 - 1.5 ppm, while are insensitive to weak reducing gas NH3 due to the existence of great steric hindrance from bulky naphthoxy groups and more traps and/or defects in self-assemblies.

关键词： phthalocyanine double-decker gas sensor self-assemblies ambipolar semiconductor

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