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Methylthio side-chain modified quinoidal benzo-[1,2-b:4,5-b'] dithiophene derivatives for high-performance ambipolar organic field-effect transistors

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Science China Chemistry 2024年第10期67卷 3357-3365页

作者： Li Chen Xiaoqi Luo Nuoya Li Shaoqian Peng Qing Jiang Di Wu Jianlong Xia State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Center of Smart Materials and DevicesWuhan University of Technology School of Chemistry Chemical Engineering and Life ScienceWuhan University of Technology Department of Chemistry National University of Singapore

Quinoidal small molecule semiconductors hold huge potential in ambipolar organic field-effect transistors（OFETs） and organic spintronic ***,two quinoidal molecules with methylthio side chains were synthesized to develop molecular semiconductors with high ambipolar mobility,designated QBDTS and *** theoretical calculation results reveal that QBDTS has a closed-shell structure while QTBDTS showed an open-shell structure with a biradical character（y0） of 0.46 and its magnetic properties were further investigated using electron paramagnetic resonance（EPR） and superconducting quantum interference device（SQUID） *** methyl side chains showed a large impact on the molecular orbital *** HOMO/LUMO levels of QBDTS and QTBDTS were measured to be -5.66/-4.56 and -5.27/-4.48 eV,respectively,which are favorable for ambipolar charge transport in ***,the spin-coated QBDTS displayed hole and electron mobilities of 0.01 and 0.5 cm2V-1s-1while QTBDTS showed a record high hole mobility of 1.8 cm2V-1s-1and electron mobility of 0.3 ***,comparative studies of the thin film morphologies also manifested the beneficial influence of methyl side chains on film crystallinity and molecule *** results strongly proved that methyl side chain engineering can be a simple but efficient strategy for modulating electronic properties and molecular stacking *** work also represents a big advancement for quinoidal molecular semiconductors in ambipolar OFET applications.

关键词： side-chain modification quinoidal molecules ambipolar diradicals organic field-effect transistors

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Thiazole-Flanked Thiazoloisoindigo as a Monomer for Balanced ambipolar Polymeric Field-effect Transistors

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Chinese Journal of Polymer Science 2022年第10期40卷 1131-1140,I0006页

作者： Si-Yu Lv Qi-Yi Li Bo-Wen Li Jie-Yu Wang You-Bing Mu Liang Li Jian Pei Xiao-Bo Wan Key Laboratory of Optoelectronic Chemical Materials and Devices Ministry of EducationSchool of Optoelectronic Materials&TechnologyJianghan UniversityWuhan 430056China Beijing National Laboratory for Molecular Sciences the Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of EducationCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 10087iChina School of Materials Science and Engineering Wuhan Institute of TechnologyWuhan 430205China

Electron-rich thiophene-flanked thiazoloisoindigo(Th-TzII)has been reported as a building block for ambipolar polymeric field-effect transistors however with preferable hole ***,we report that by using an electron deficient thiazole as the flanked moiety,the corresponding thiazoloisoindigo(Tz-TzII)can still be synthesized,although in a more sinuous *** calculation and experimental results demonstrate that Tz-TzII is more electron-deficient than Th-TzII,and the corresponding polymer P(TzII-Tz-T-Tz)exhibits high and balanced hole/electron mobility of 0.70/0.64 cm^(2)·V^(-1)·s^(-1).

关键词： Thiazoloisoindigo ambipolar Polymeric field-effect transistors

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Toward High Performance ambipolar Transport from Super-exchange Perspective:Theoretical Insights for IID-based Copolymers

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Chinese Journal of Polymer Science 2022年第4期40卷 355-364页

作者： Wei-Na Zhang Xiao-Qian Wu Guo Wang Yu-Ai Duan Hua Geng Yi Liao Department of Chemistry Beijing Advanced Innovation Center for Imaging Theory and TechnologyCapital Normal UniversityBeijing 100048China

High-performance ambipolar charge transport materials can reduce the manufacturing cost of OFET and OPV devices,and simplify circuit design and device *** order to obtain ambipolar donor-acceptor(D-A)polymer,many efforts have been made through different donor and acceptor combination,halogenation or heteroatom ***,the influencing factor for charge transport polarity is still much *** on intra-chain super-exchange mechanism for D-A polymer,we found that the energy alignment of donor and acceptor moiety has large impact on charge transport *** the HOMO-LUMO(H-L)gap of the acceptor moiety is narrow,its HOMO/LUMO energy level both lie between the HOMO and LUMO of the donor moiety(sandwich-type energy alignment),and the corresponding D-A copolymers will be more likely ambipolar *** thus,take a narrow H-L gap thiazoleisoindigo(TzIID)acceptor as an example,we demonstrated that a series of TzIID based copolymers combined with wide H-L gap donor moieties can reveal ambipolar *** further predict several high performance ambipolar D-A copolymers(TzIID-TT etc.)with balanced electron and hole transport,whose effective mass(m_(e)^(*)=0.146 and m_(h)^(*)=0.128)is one of the smallest effective masses among ambipolar materials.

关键词： D-A copolymer ambipolar Super-exchange mechanism Charge transport

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ambipolar two-dimensional bismuth nanostructures in junction with bismuth oxychloride

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Nano Research 2021年第4期14卷 1103-1109页

作者： Xianzhong Yang Shengnan Lu Jun Peng Xiangchen Hu Nan Wu Congcong Wu Chao Zhang Yifan Huang Yi Yu Hung-Ta Wang School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China

Despite the unique properties of bismuth(Bi),there is a lack of two-dimensional(2D)heterostructures between Bi and other functional 2D ***,a coherent strategy is reported to simultaneously synthesize rhombohedral phase Bi nanoflakes and bismuth oxychloride(BiOCI)*** delicate balance between several reactions is mediated mainly for the reduction and chlorination in the chemical vapor transport(CVT)*** Bi-BiOCI lateral heterostructures have been constructed via the coalescence of the two different 2D *** characteristics of ambipolar conducting Bi and insulator-like BiOCI are elaborated by scanning microwave impedance microscopy(sMIM).This work demonstrates a way to construct a 2D Bi nanostructure in junction with its oxyhalide.

关键词： Bi ambipolar BiOCI chemical vapor transport nanostructures

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ambipolar organic heterojunction transistors based on F_(16)CuPc/CuPc with a MoO_3 buffer layer

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Journal of Semiconductors 2015年第10期36卷 49-54页

作者：仪明东张宁解令海黄维 Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials(IAM) Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM)Nanjing University of Posts & Telecommunications Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM)Nanjing Tech University(Nanjing Tech)

We fabricated heterojunction organic field-effect transistors （OFETs） using copper phthalocyanine （CuPc） and hexadecafluorophtholocyaninatocopper （F16CuPc） as hole transport layer and electron transport layer, respectively. Compared with F 16 CuPc based OFETs, the electron field-effect mobility in the heterojunction OFETs increased from 3.1 × 10-3 to 8.7 ×10-3 cm2/（V.s）, but the p-type behavior was not observed. To enhanced the hole injection, we modified the source-lrain electrodes using the MoO3 buffer layer, and the hole injection can be effectively improved. Eventually, the ambipolar transport characteristics of the CuPc/F16CuPc based OFETs with a MoO3 buffer layer were achieved, and the field-effect mobilities of electron and hole were 2.5 × 10-3 and 3.1 × 10-3 cm2/（V.s）, respectively.

关键词： organic field-effect transistors heterojunction ambipolar contact resistance

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Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl) perylene-3,4,9,10-tetracarboxylic diimide

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Chinese Physics B 2009年第7期18卷 3002-3007页

作者：李建丰常文利欧谷平张福甲 Department of Physics Lanzhou University School of Mathematics Physics & Software EngineeringLanzhou Jiaotong University

Fabrication of ambipolar organic field-effect transistors （OFETs） is essential for the achievement of an organic complementary logic circuit. ambipolar transports in OFETs with heterojunction structures are *** select pentacene as a P-type material and N,N＇-bis（4-trifluoromethylben-zyl）perylene-3,4,9,10-tetracarboxylic diimide （PTCDI-TFB） as a n-type material in the active layer of the *** field-effect transistor shows highly air-stable ambipolar characteristics with a field-effect hole mobility of 0.18 cm^2/（V·s） and field-effect electron mobility of 0.031 cm^2/（V·s）.Furthermore the mobility only slightly decreases after being exposed to air and remains stable even for exposure to air for more than 60 *** high electron affinity of PTCDI-TFB and the octadecyltrichlorosilane （OTS） self-assembly monolayer between the SiO2 gate dielectric and the organic active layer result in the observed air-stable characteristics of OFETs with high *** results demonstrate that using the OTS as a modified gate insulator layer and using high electron affinity semiconductor materials are two effective methods to fabricate OFETs with air-stable characteristics and high mobility.

关键词： organic heterojunction transistors ambipolar air-stable high electron affinity

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Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer

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Chinese Physics B 2019年第1期28卷 656-662页

作者： Ru Han Hai-Chao Zhang Dang-Hui Wang Cui Li School of Computer Science and Engineering Northwestern Polytechnical University

A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.

关键词： tunneling field effect transistor T-shaped tunnel field-effect transistor gate dielectric spacer ambipolar current analog/RF performance

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Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance

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Chinese Physics B 2019年第10期28卷 571-578页

作者： Hui-Fang Xu Jian Cui Wen Sun Xin-Feng Han Institute of Electrical and Electronic Engineering Anhui Science and Technology University

A tunnel field-effect transistor(TFET) is proposed by combining various advantages together, such as non-uniform gate-oxide layer, hetero-gate-dielectric(HGD), and dual-material control-gate(DMCG) technology. The effects of the length of non-uniform gate-oxide layer and dual-material control-gate on the on-state, off-state, and ambipolar currents are investigated. In addition, radio-frequency performance is studied in terms of gain bandwidth product, cut-off frequency,transit time, and transconductance frequency product. Moreover, the length of non-uniform gate-oxide layer and dualmaterial control-gate are optimized to improve the on-off current ratio and radio-frequency performances as well as the suppression of ambipolar current. All results demonstrate that the proposed device not only suppresses ambipolar current but also improves radio-frequency performance compared with the conventional DMCG TFET, which makes the proposed device a better application prospect in the advanced integrated circuits.

关键词： non-uniform gate-oxide layer ambipolar current radio-frequency performances tunnel fieldeffect transistor

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High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors

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Chinese Physics B 2020年第5期29卷 556-560页

作者： Sheng Sun Yuzhi Li Shengdong Zhang School of Electronic and Computer Engineering Peking University Shenzhen Graduate SchoolPeking UniversityShenzhen 518055China TCL China Star Optoelectronics Technology Co. Ltd.Shenzhen 518055China

This work reports on the integration of organic and inorganic semiconductors as heterojunction active layers for high-performance ambipolar transistors and complementary metal-oxide-semiconductor(CMOS)-like *** is employed as a p-type organic semiconductor for its stable electrical performance,while the solution-processed scandium(Sc)substituted indium oxide(ScInO)is employed as an n-type inorganic *** is observed that by regulating the doping concentration of Sc,the electrical performance of the n-type semiconductor could be well controlled to obtain a balance with the electrical performance of the p-type semiconductor,which is vital for achieving high-performance *** the doping concentration of Sc is 10 at.%,the CMOS-like logic inverters exhibit a voltage gain larger than 80 and a wide noise margin(53%of the theoretical value).The inverters also respond well to the input signal with frequency up to 500 Hz.

关键词： solution-processed ScInO ambipolar transistor inverter

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Suppression of ambipolar Conduction in Schottky Barrier Carbon Nanotube Field Effect Transistors:Modeling,Optimization Using Particle Swarm Intelligence,and Fabrication

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Computer Modeling in Engineering & Sciences 2019年第6期119卷 577-591页

作者： P.Reena Monica V.T.Sreedevi School of Electronics Engineering VIT ChennaiVandalur-Kelambakkam RoadChennai603103India School of Electrical Engineering VIT ChennaiVandalur-Kelambakkam RoadChennai603103India

A mathematical model and experimental analysis of the impact of oxide thickness on the ambipolar conduction in Schottky Barrier Carbon Nanotubes(CNTs)Field Effect Transistor(SB CNTFETs)is *** of ambipolar conduction in SB CNTFETs is imperative in order to establish them as the future of IC *** ambipolar nature of SB CNTFETs leads to a great amount of leakage *** a gate oxide dielectric of thickness,tox^50 nm suppresses the ambipolar *** an SB CNTFET,it is the electric field at the source/drain contacts that control the conductance and the band bending length at the contacts is defined by ***,tox is the prime parameter that influences the width of the Schottky barrier and the current in the subthreshold *** to the wide SB,there is a loss in on-current due to tunneling,but the current due to thermionic emission is increased by employing a high-κdielectric such as Zirconium dioxide(ZrO2).This work proposes an approach to suppress ambipolar behavior in SB CNTFETs without decreasing the on *** thickness and dielectric constant of the gate oxide are optimized using the particle swarm optimization(PSO)algorithm to achieve suppression of ambipolar conduction without any loss in *** proposed SB CNTFET was modeled using *** demonstration of the suppression of ambipolar property is also *** SB CNTFETs are fabricated using high-κdielectric such as ZrO2 with different thickness.A device with thin(~5 nm)gate oxide and another device with thick(~50 nm)gate oxide were *** the experimental results,it is observed that the device with the thin gate oxide exhibited ambipolar characteristics and the device with the thick gate oxide did not exhibit ambipolar *** increase in thickness,tox,ensures suppression of ambipolar behavior.

关键词： ambipolar conduction Carbon nanotubes high-κgate oxide Schottky barrier

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