检索结果-南通市图书馆

Degradation of the transconductance of a gate-modulated generation current in nMOSFET

Chinese Physics B 2012年第8期21卷 564-569页

作者：陈海峰过立新杜慧敏 School of Electronic Engineering Xi'an University of Posts and Telecommunications

The degradation of transconductance （G） of a gate-modulated generation current IGD in a LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress （EIS）. The trapped electrons located in the gate oxide over the LDD region （QL） makes the effective drain voltage diminish. Accordingly, the G peak in depletion （GMD） and that in weak inversion （GMw） decrease. It is found that △GMD and △GMw each have a linear relationship with the n-th power of stress time （tn） in a dual-log coordinate： △GMD octn, AGMD octn （n = 0.25）. During the alternate stress, the injected holes neutralize QL induced by the previous EIS. This neutralization makes the effective VD restore to the initial value and then the IGD peak recovers completely. Yet the threshold voltage recovery is incomplete due to the trapped electron located over the channel （Qc）. As a result, GMW only recovers to circa 50% of the initial value after the hole-injection-stress （HIS）. Instead, GMD almost recovers. The relevant mechanisms are given in detail.

关键词： generation current transconductance electron injection alternate stress degradation

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Hot carrier injection degradation under dynamic stress

引用

Chinese Physics B 2011年第3期20卷 402-406页

作者：马晓华曹艳荣郝跃张月 School of Technical Physics Xidian University School of Electronical & Machanical Engineering Xidian University Key Lab of Wide Band-Gap Semiconductor Materials and Devices

In this paper, we have studied hot carrier injection （HCI） different degradations are obtained from the experiment results. under alternant stress. Under different stress modes, The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A （DC stress with electron injection）, the degradation keeps increasing. In the stress modes B （DC stress and then stress with the smMlest gate injection） and C （DC stress and then stress with hole injection under Vg = 0 V and Vd = 1.8 V）, recovery appears in the second stress period. And in the stress mode D （DC stress and then stress with hole injection under Vg = -1.8 V and Vd = 1.8 V）, as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained.

关键词： hot carrier injection alternate stress recovery degradation

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：