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Room temperature non-balanced electric bridge ethanol gas sensor based on a single zno microwire

Chinese Physics B 2020年第1期29卷 463-468页

作者： Yun-Zheng Li Qiu-Ju Feng Bo Shi Chong Gao De-Yu Wang Hong-Wei Liang School of Physics and Electronic Technology Liaoning Normal UniversityDalian 116029China School of Microelectronics Dalian University of TechnologyDalian 116024China

In this paper,ultra-long and large-scaled zno microwire arrays are grown by the chemical vapor deposition method,and a single zno microwire-based non-balanced electric bridge ethanol gas sensor is *** experimental results show that the gas sensor has good repeatability,high response rate,short response,and recovery time at room temperature(25℃).The response rate of the gas sensor exposed to 90-ppm ethanol is about 93%,with a response time and recovery time are 0.3 s and 0.7 s *** a contrast,the traditional resistive gas sensor of a single zno microwire shows very small gas response ***,ethanol gas sensor based on non-balanced electric bridge can obviously enhance gas sensing characteristics,which provides a feasible method of developing the high performance zno-based gas sensor.

关键词： zno microwire gas sensor room temperature ethanol

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Boosting the performance of crossed zno microwire UV photodetector by mechanical contact homo-interface barrier

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Chinese Physics B 2022年第10期31卷 256-260页

作者： Yinzhe Liu Kewei Liu Jialin Yang Zhen Cheng Dongyang Han Qiu Ai Xing Chen Yongxue Zhu Binghui Li Lei Liu Dezhen Shen State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance ***,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low ***,an UV photodetector built from three cross-intersecting zno microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer *** with the reference device without interface,the dark current of this zno double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current *** addition,zno double-interface photodetector exhibits a much faster response speed(~0.65 s)than the no-interface device(~95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier *** findings in this work provide a promising approach for the design and development of high-performance photodetectors.

关键词： zno microwire interface potential barrier dark current photocurrent-to-dark current ratio

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