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Chinese Physics B 2020年第3期29卷 480-487页

作者： Jun-Fan Chen Sheng-Sheng Zhao Ling-Ling Yan Hui-Zhi Ren Can Han De-Kun Zhang Chang-Chun Wei Guang-Cai Wang Guo-Fu Hou § Ying Zhao Xiao-Dan Zhang Institute of Photoelectronic Thin Film Devices and Technology of Nankai University Tianjin 300350China Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Tianjin 300350China Engineering Center of Thin Film Photoelectronic Technology of Ministry of Education Tianjin 300350China Sino-Euro Joint Research Center for Photovoltaic Power Generation of Tianjin Tianjin 300350China

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_(oc) of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.

关键词： a-SiO_x:H orientated wafers silicon heterojunction

Damage mechanisms during lapping and mechanical polishing CdZnTe wafers

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Rare Metals 2010年第3期29卷 276-279页

作者： LI Yan,KANG Renke,GAO Hang,and WU Dongjiang Key Laboratory for Precision and Non-Traditional Machining Technology (Ministry of Education),Dalian University of Technology,Dalian 116024,China Key Laboratory for Precision and Non-Traditional Machining Technology (Ministry of Education) Dalian University of Technology Dalian China

CdZnTe wafers were machined by lapping and mechanical polishing processes,and their surface and subsurface damages were *** surface damages are mainly induced by three-body abrasive wear and embedded abrasive wear during lapping process.A new damage type,which is induced by the indentation of embedded abrasives,is found in the *** a floss pad is used to replace the lapping plate during machining,the surface damage is mainly induced by two-body abrasive and three-body abrasive wear,and the effect of embedded abrasives on the surface is greatly ***,this new damage type nearly disappears on the subsurface.

关键词： lapping mechanical polishing wafers surface subsurface abrasive

INFLUENCE OF NITROGEN ON THERMAL WARPAGE IN CZOCHRALSKI SILICON wafers

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中国有色金属学会会刊：英文版 1999年第2期9卷 148-150页

作者： Lu, Huanming Zhejiang Univ Hangzhou China

１ＩＮＴＲＯＤＵＣＴＩＯＮＦｏｒｍａｎｙｙｅａｒｓ，ｗａｒｐａｇｅｏｆｓｉｌｉｃｏｎｗａｆｅｒｓｈａｓｂｅｅｎｃｏｎｃｅｒｎｅｄｉｎｖｅｒｙｌａｒｇｅｓｃａｌｅｉｎｔｅｇｒａｔｅｄｃｉｒｃｕｉｔ（ＶＬＳＩ）ｍａｎｕ... 详细信息

１ＩＮＴＲＯＤＵＣＴＩＯＮＦｏｒｍａｎｙｙｅａｒｓ，ｗａｒｐａｇｅｏｆｓｉｌｉｃｏｎｗａｆｅｒｓｈａｓｂｅｅｎｃｏｎｃｅｒｎｅｄｉｎｖｅｒｙｌａｒｇｅｓｃａｌｅｉｎｔｅｇｒａｔｅｄｃｉｒｃｕｉｔ（ＶＬＳＩ）ｍａｎｕｆａｃｔｕｒｉｎｇ［１－４］．Ｕｓ...

关键词： nitrogenthermal warpagemechanical strengthsilicon wafers

Investigation of Inhomogeneity in Single Crystal SiC wafers Using C-Scan Acoustic Scanning Microscopy

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Crystal Structure Theory and Applications 2020年第1期9卷 1-11页

作者： Ibrahim M. Abdel-Motaleb Department of Electrical Engineering Northern Illinois University DeKalb IL USA

In this work, C-Scan Acoustic Scanning Microscopy (ASM) is used to map the defects of three SiC samples. The acoustic images indicate that numerous defects with different shapes and area?sexist in the wafers. Some of the defects have areas of more than 100,000 μm2. The number of defects ranges from 1 to 50 defects/wafer. Defect mapping is essential for defect repairing or avoidance.?This work shows that ASM can locate the precise positions of the crystallographic defects, which?enables?defects repair and yield enhancement.

关键词： SiC Lattice Defects Acoustic Scanning Microscopy ASM wafers

Challenges in Processing Diamond Wire Cut and Black Silicon wafers in Large-Scale Manufacturing of High Efficiency Solar Cells

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Journal of Power and Energy Engineering 2020年第2期8卷 65-77页

作者： Kishan Shetty Yudhbir Kaushal Nagesh Chikkan D. S. Murthy Chandra Mauli Kumar Tata Power Solar Systems Limited Bangalore India

Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut wafers and the abundant presence of amorphous silicon content, which are introduced from wafer manufacturing industry during sawing of multi-crystalline wafers using ultra-thin diamond wires. The industry standard texturing process for multi-crystalline wafers cannot deliver a homogeneous etched silicon surface, thereby requiring an additive compound, which acts like a surfactant in the acidic etch bath to enhance the texturing quality on diamond wire cut wafers. Black silicon wafers on the other hand require completely a different process chemistry and are normally textured using a metal catalyst assisted etching technique or by plasma reactive ion etching technique. In this paper, various challenges associated with cell processing steps using diamond wire cut and black silicon wafers along with cell electrical results using each of these wafer types are discussed.

关键词： Diamond Wire Cut Black Silicon Slurry wafers Amorphous Silicon Additives Etching and Texturization

Si-On-ONO（SOONO） Devices Realized on Bulk Si wafers for Fully-Depleted SOI Transistor and 4-Bit Flash Memory Applications

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Si-On-ONO（SOONO） Devices Realized on Bulk Si Wafers for Fu...

Full-color monolithic hybrid quantum dot nanoring micro light-emitting diodes with improved efficiency using atomic layer deposition and nonradiative resonant energy transfer

2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： Chang Woo Oh Sung Hwan Kim Yong Lack Choi Na Young Kim Sung In Hong Hyun Jun Bae Dong-Won Kim Donggun Park Device Research Team R＆D CenterSamsung Electronics Co.San 24Nongseo-DongKiheung-EupYongin-CityKyungki-DoKOREA449-711

ISBN: (纸本)1424401607

＜正＞We proposed and successfully demonstrated Si-on-ONO（SOONO） devices *** depleted SOI transistor and 4 bit flash memory *** terms of HP transistor,SOONO MOSFETs showed good SCE immunity and high driving *** terms of a 4-bit flash memory,SOONO MOSFETs with ONO layers as their gate dielectrics showed clear 4-bit operation using the physically separated 4 storage nodes of double ONO layers.

关键词： 4-bit flash memories Gate dielectrics Transistor Device Component silicon-on-insulator styrene oxide isomerase Wafer Dosage Form wafers

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Photonics Research 2019年第4期7卷 416-422页

作者： SUNG-WEN HUANG CHEN CHIH-CHIANG SHEN TINGZHU WU ZHEN-YOU LIAO LEE-FENG CHEN JIA-ROU ZHOU CHUN-FU LEE CHIH-HAO LIN CHIEN-CHUNG LIN CHIN-WEI SHER PO-TSUNG LEE AN-JYE TZOU ZHONG CHEN HAO-CHUNG KUO Institute of Electro-Optical Engineering Taiwan Chiao Tung University Department of Electronic Science Fujian Engineering Research Center for Solid-State Lighting Xiamen University Institute of Photonics System Taiwan Chiao Tung University HKUST Fok Ying Tung Research Institute Department of Electrical Engineering and Computer Sciences and TBSI University of California at Berkeley

Full-color displays based on micro light-emitting diodes(μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring(NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An Al_2O_3 layer was deposited on the sidewall of NR-μLEDs,which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light.

关键词： Full-color displays epitaxial wafers

Magnetic resonance imaging appearance and changes on intracavitary Gliadel wafer placement:A pilot study

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World Journal of Radiology 2011年第11期3卷 266-272页

作者： Rivka R Colen Pascal O Zinn Saman Hazany Daniel Do-Dai Julian K Wu Kevin Yao Jay J Zhu Department of Radiology Brigham and Women's HospitalBostonMA 02115United States Department of Neurosurgery Beth Israel Deaconess Medical CenterBostonMA 02215United States Department of Radiation Oncology Dana Farber Cancer InstituteBostonMA 02115United States Department of Radiology Beth Israel Deaconess Medical CenterBostonMA 02215United States Department of Neuroradiology Tufts Medical CenterBostonMA 02115United States Department of Neurosurgery Tufts Medical CenterBostonMA 02115United States Mischer Neuroscience Associates UT Houston and Memorial Hermann HospitalHoustonTX 77030United States

AIM:To investigate changes on magnetic resonance imaging(MRI) which occur with intracavitary Gliadel wafer placement in patients with glioblastoma multiforme(GBM).METHODS:This retrospective Health Insurance Portability and Accountability Act-compliant study was approved by the institutional review board,with a waiver of informed consent.A total of eight patients aged 29-67 years with GBM underwent Gliadel wafer placement.T2-weighted/FLAIR images and post-contrast T1-weighted images both before and after wafer placement were retrospectively reviewed in consensus to determine changes in the following parameters:appearance of the pericavitary tissue,pattern of tumor recurrence or progression and appearance of the Gliade lwafer ***:Five out of the eight patients had a progressive increase in enhancement and pericavitary T2/FLAIR hyperintensity within the first 2 mo and a subsequent decrease in these MRI *** ofthese patients had tumor recurrence within the first6 *** out of the eight patients demonstrated aprogressive increase in enhancement and pericavitary T2 hyperintensity,which continued after the first 6 mo,and were subsequently diagnosed with true tumor *** was no increase in distant/nonlocal tumor *** Gliadel wafer appearance changed over ***:Pseudoprogression is common after intracavitary Gliadel wafer placement and thus care should be taken before diagnosing tumor progression or recurrence within the first 2 mo.

关键词： Pseudoprogression Gliadel wafers Glioblastoma Local chemotherapy Glioma