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visible-blind short-wavelength infrared photodetector with high responsivity based on hyperdoped silicon

Photonics Research 2019年第3期7卷 351-358页

作者： XIAODONG QIU ZIJING WANG XIAOTONG HOU XUEGONG YU DEREN YANG State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University

Developing a low-cost, room-temperature operated and complementary metal-oxide-semiconductor(CMOS)compatible visible-blind short-wavelength infrared(SWIR) silicon photodetector is of interest for security,telecommunications, and environmental sensing. Here, we present a silver-supersaturated silicon(Si:Ag)-based photodetector that exhibits a visible-blind and highly enhanced sub-bandgap photoresponse. The visible-blind response is caused by the strong surface-recombination-induced quenching of charge collection for short-wavelength excitation, and the enhanced sub-bandgap response is attributed to the deep-level electrontraps-induced band-bending and two-stage carrier excitation. The responsivity of the Si:Ag photodetector reaches 504 mA · W^(-1) at 1310 nm and 65 m A · W^(-1) at 1550 nm under-3 V bias, which stands on the stage as the highest level in the hyperdoped silicon devices previously reported. The high performance and mechanism understanding clearly demonstrate that the hyperdoped silicon shows great potential for use in optical interconnect and power-monitoring applications.

关键词： visible-blind short-wavelength infrared photodetector hyperdoped silicon complementary metal-oxide-semiconductor(CMOS)

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Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection

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Photonics Research 2019年第8期7卷 805-811页

作者： WEIZONG XU YATING SHI FANGFANG REN DONG ZHOU LINLIN SU QING LIU LIANG CHENG JIANDONG YE DUNJUN CHEN RONG ZHANG YOUDOU ZHENG HAI LU School of Electronic Science and Engineering Nanjing University

In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is *** an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 1.2 × 10~4, and high photoresponsivity of 0.35 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electricfield-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes.

关键词： PF GaN visible-blind ultraviolet detection

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