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Optoelectronic Synapses Based on MXene/Violet Phosphorus van der waals heterojunctions for Visual‑Olfactory Crossmodal Perception

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Nano-Micro Letters 2024年第6期16卷 38-52页

作者： Hailong Ma Huajing Fang Xinxing Xie Yanming Liu He Tian Yang Chai Center for Advancing Materials Performance From the Nanoscale(CAMP‑Nano) State Key Laboratory for Mechanical Behavior of MaterialsXi’an Jiaotong UniversityXi’an 710049People’s Republic of China Institute of Microelectronics and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China Department of Applied Physics The Hong Kong Polytechnic UniversityHong KongPeople’s Republic of China

The crossmodal interaction of different senses,which is an important basis for learning and memory in the human brain,is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception,but related researches are ***,we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus(VP)van der waals *** from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene,the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude,reaching up to 7.7 A W^(−1).Excited by ultraviolet light,multiple synaptic functions,including excitatory postsynaptic currents,pairedpulse facilitation,short/long-term plasticity and“learning-experience”behavior,were demonstrated with a low power ***,the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments,enabling it to simulate the interaction of visual and olfactory information for crossmodal *** work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.

关键词： Violet phosphorus MXene van der waals heterojunctions Optoelectronic synapses Crossmodal perception

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Synthesis of two-dimensional transition metal dichalcogenides for electronics and optoelectronics

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InfoMat 2021年第4期3卷 362-396页

作者： Min Wu Yonghong Xiao Yang Zeng Yuanliang Zhou Xiangbin Zeng Lining Zhang Wugang Liao College of Electronic and Information Engineering Insitute of Microscale Opteletronics Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsSZU-NUS Collaborative Innovation Centre for Optoelectronic Science and TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceShenzhen UniversityShenzhenPeople's Republic of China Shenzhen Geim Graphene Center Tsinghua Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhenPeople's Republic of China Laboratory for Optoeletronic Devices and Informnation Integration School of Optical and electronic InformationHuazhong Universty of Science and TechnologyWuhanPeople's Republic of China School of Electronic and Computer Engineering Peking UniversityShenzhenPeople's Republic of China

Tremendous efforts have been devoted to preparing the ultrathin two-dimensional(2D)transition-metal dichalcogenides(TMDCs)and TMDCS-based heterojunctions owing to their unique properties and great potential applications in next generation electronics and optoelectronics over the past ***,to fulfill the demands for practical applications,the batch production of 2D TMDCs with high quality and large area at the mild condi-tions is still a *** feature article reviews the state-of-the art research progresses that focus on the preparation and the applications in elec-tronics and optoelectronics of 2D TMDCs and their van der waals ***,the preparation methods including chemical and physical vapor deposition growth are comprehensively ***,recent progress on the application of fabricated 2D TMDCs based materials is revealed with particular attention to electronic(eg,field effect transistors and logic circuits)and optoelectronic(eg,photodetectors,photovoltaics,and light emitting diodes)***,the challenges and future prospects are considered based on the current advance of 2D TMDCs and related heterojunctions.

关键词： electronic and optoelectronic application transition metal dichalcogenides two-dimensional materials van der waals heterojunctions

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Exploitation of Bi2O2Se/graphene van der waals heterojunction for creating efficient photodetectors and short-channel field-effect transistors

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InfoMat 2019年第3期1卷 390-395页

作者： Congwei Tan Shipu Xu Zhenjun Tan Luzhao Sun Jinxiong Wu Tianran Li Hailin Peng Center for Nanochemistry Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesInstitute of Physical ChemistryCollege of Chemistry and Molecular EngineeringPeking UniversityBeijingChina Academy for Advanced Interdisciplinary Studies Peking UniversityBeijingP.R.China

The formation of heterojunction within solid-state devices enables them with eventually high performances,but provides a challenge for material synthesis and device fabrication because strict conditions such as lattice match are ***,we show a facile method to fabricate a van der waals(vdW)heterojunction between two-dimensional(2D)bismuth oxyselenide(Bi2O2Se)and graphene,during which the graphene is directly transferred to the Bi2O2Se and served as a lowcontract-resistant electrode with small work function mismatch(~50 meV).As an optoelectronic device,the Bi2O2Se/graphene vdW heterojunction allows for the efficient sensing toward 1200-nm incident *** the application of fieldeffect transistors(FETs),the short-channel(50 nm)sample can be synthesized by utilizing these two 2D materials(ie,channel:Bi2O2Se;drain/source terminal:graphene)and the n-type characteristic can be observed with the accordant field *** is confirmed that we show a simple way to prepare the vdW heterojunction which is aiming to the high-performance applications among optoelectronics and FETs.

关键词： Bi2O2Se graphene van der waals heterojunctions

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原位集成光浮栅的多层SnS_(2)/少层MoS_(2)异质结用于高性能光电探测器与光学成像

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Science China Materials 2023年第5期66卷 1879-1890页

作者：易华鑫杨海林马楚荣马宇航叶俏珏陆健婷王婉郑照强邓泽祥邹逸超姚健东杨国伟 State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research CenterSchool of Materials Science&EngineeringSun Yatsen UniversityGuangzhou 510275China Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices Sun Yat-sen UniversityGuangzhou 510275China Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications Institute of Photonics TechnologyJinan UniversityGuangzhou 511443China School of Materials and Energy Guangdong University of TechnologyGuangzhou 510006China School of Science Guilin University of Aerospace TechnologyGuilin 541004China

自单层MoS_(2)光电晶体管问世以来,二维层状材料一直被认为是实现下一代新型光电器件与系统的最引人瞩目的候选材料之一.然而,大多数报道的二维层状材料光电探测器都存在一定的缺点,如响应率低、暗电流大、比探测率低、开关比低、响应... 详细信息

自单层MoS_(2)光电晶体管问世以来,二维层状材料一直被认为是实现下一代新型光电器件与系统的最引人瞩目的候选材料之一.然而,大多数报道的二维层状材料光电探测器都存在一定的缺点,如响应率低、暗电流大、比探测率低、开关比低、响应速率慢等.在本研究中,通过堆叠由大气压化学气相沉积技术所生长的MoS_(2)和SnS_(2)纳米片,制备出了多层SnS_(2)/少层MoS_(2)范德华异质结.相应的SnS_(2)/MoS_(2)异质结光电探测器展示出了具有竞争力的综合性能:大开关比(171)、高响应率(28.3 A W^(-1)),以及出色的比探测率(1.2×10^(13)Jones).此外,该器件还实现了响应/恢复时间低至1.38 ms/600μs的超快响应速率.其优异的性能与SnS_(2)/MoS_(2)异质结的Ⅱ型能带排列以及原位形成的无缝光浮栅的协同作用相关,这有助于分离光激发的电子-空穴对,并延长非平衡载流子的寿命.得益于出色的光敏性,该SnS_(2)/MoS_(2)器件实现了概念验证的光学成像应用.总体而言,本研究为实现具有优异综合性能的先进光电探测器提供了独特视角.

关键词： in-situ floating photogate 2D layered materials van der waals heterojunctions photodetectors optical imaging

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