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Constructing charge transfer channel between dopants and oxygen vacancies for enhanced visible-light-driven water oxidation

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Nano Research 2021年第10期14卷 3365-3371页

作者： Ming Cheng Lan Yang Huiyi Li Wei Bai Chong Xiao Yi Xie Hefei National Laboratory for Physical Sciences at the Microscale CAS Centre for Excellence in NanoscienceiCHEMUniversity of Science and Technology of ChinaHefei 230026China Institute of Energy Hefei Comprehensive National Science CenterHefei 230031China

Photocatalytic water oxidation is a crucial step in water splitting,but is generally restricted by the slow ***,it is necessary to develop high-performance water oxidation ***,the Fe-doped Bi2WO6 nanosheets with oxygen vacancies(OVs)were synthesized for enhanced photocatalytic water oxidation efficiency,showing a synergistic effect between Fe dopants and *** a molar fraction of 2%Fe was doped into the Bi2WO6 nanosheets,the visible-light-driven photocatalytic oxygen evolution rate was increased up to 131.3μmol·h^(-1)·g_(cat)^(-1)under ambient conditions,which was more than 3 times that of pure Bi2WO6 *** proper doping concentration of Fe could promote the formation of OVs and at the same time modulate the band structure of catalysts,especially the position of the valence band maximum(VBM),leading to effective visible-light absorption and enhanced oxidizing ability of photogenerated *** ameliorated localized electron distribution,fast charge transfer channel emerged between the OVs and adjacent metal atoms,which accelerated the charge carrier transfer and promoted the separation of photoexcited electrons and *** work provides feasible approaches for designing efficient two-dimensional semiconductor water oxidation photocatalysts that could utilize visible-light,which will make more use of solar energy.

关键词： water oxidation reaction Bi2WO6 nanosheets oxygen vacancies valence band maximum charge transfer channel

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Graphene/SrTiO3 hetero interface studied by X-ray photoelectron spectroscopy

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Progress in Natural Science:Materials International 2016年第4期26卷 422-426页

作者： S.Karamat C.Ke U.Y.Inkaya Rizwan Akram Ilker Yildiz S.Shah Zaman A.Oral Department of Physics Middle East Technical University COMSATS Institute of Information Technology Microelectronics Centre School of Electrical and Electronic Engineering Nanyang Technological University Department of Electrical Engineering College of Engineering Qassim University

The present paper focuses on study of graphene and strontium titanate（SrTiO3or STO） interface. An ambient pressure chemical vapour deposition（AP-CVD） setup is used to grow graphene on STO（110）substrates in the presence of methane, argon and hydrogen gases at 1000 °C for 4 h. Raman spectroscopy measurements confirm the presence of graphene on STO substrates due to the existence of typical D and G peaks referring to graphene. These characteristic peaks are missing in the spectrum for bare substrates.X-ray photoelectron spectroscopy（XPS） is carried out for elemental analysis of samples, and study their bonding with STO substrates. We employed the valence band spectrum to calculate the valence band offset（VBO） and conduction band offset（CBO） at the G-STO interface. Also, we present an energy band diagram for Bi-layer and ABC（arranging pattern of carbon layers） stacked graphene layers.

关键词： Chemical vapour deposition X-ray photoelectron spectroscopy Raman spectroscopy Graphene valence band maximum

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