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Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked dram

Journal of Semiconductors 2023年第12期44卷 133-140页

作者： Zhenzhen Kong Hongxiao Lin Hailing Wang Yanpeng Song Junjie Li Xiaomeng Liu Anyan Du Yuanhao Miao Yiwen Zhang Yuhui Ren Chen Li Jiahan Yu Jinbiao Liu Jingxiong Liu Qinzhu Zhang Jianfeng Gao Huihui Li Xiangsheng Wang Junfeng Li Henry HRadamson Chao Zhao Tianchun Ye Guilei Wang Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Beijing Superstring Academy of Memory Technology Beijing 100176China Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and SystemGuangzhou 510535China Microelectronics Institute University of Chinese Academy of SciencesBeijing 100049China Hefei National Laboratory Hefei 230088China

Fifteen periods of Si/Si_(0.7)Ge_(0.3)multilayers(MLs)with various Si Ge thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition(RPCVD).Several methods were utilized to characterize and analyze the ML *** high resolution transmission electron microscopy(HRTEM)results show that the ML structure with 20 nm Si_(0.7)Ge_(0.3)features the best crystal quality and no defects are *** Si_(0.7)Ge_(0.3)ML structures etched by three different methods were carried out and compared,and the results show that they have different selectivities and *** this work,the fabrication process influences on Si/Si Ge MLs are studied and there are no significant effects on the Si layers,which are the channels in lateral gate all around field effect transistor(L-GAAFET)*** vertically-stacked dynamic random access memory(vs-dram),it is necessary to consider the dislocation caused by strain accumulation and stress release after the number of stacked layers exceeds the critical *** results pave the way for the manufacture of high-performance multivertical-stacked Si nanowires,nanosheet L-GAAFETs,and dram devices.

关键词： RPCVD epitaxy SiGe/Si multilayers L-GAAFETs vs-dram

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