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Synthesis and Characterization of Copper Doped Zinc Oxide Thin Films Deposited by RF/DC Sputtering Technique

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Journal of Shanghai Jiaotong university(Science) 2023年第2期28卷 172-179页

作者： KHAN Mohibul ALAM Md.Shabaz AHMED Sk.Faruque Nanoscience Laboratory Department of PhysicsAliah UniversityKolkata 700160India

Undoped and copper(Cu)doped zinc oxide(Zn_(1-x)Cu_(x)O,where x=0-0.065)nano crystal thin films have been deposited on glass substrate via RF/DC reactive co-sputtering *** aim of this work is to investigate the crystal structure of ZnO and Cu doped ZnO thin films and also study the effect of Cu doping on optical band gap of ZnO thin *** identification and confirmation of the crystallinity,film thickness and surface morphology of the nano range thin films are confirmed by using X-ray diffractometer(XRD),scanning electron microscope and atomic force *** XRD peak at a diffractive angle of 34.44°and Miller indices at(002)confirms the ZnO thin *** size of undoped ZnO thin films is 27 nm and decreases from 27 nm to 22 nm with increasing the atomic fraction of Cu(x_(Cu))in the ZnO thin films from 0 to 6.5%respectively,which is calculated from XRD(002)*** different bonding information of all deposited films was investigated by Fourier transform infrared spectrometer in the range of wave number between 400 cm^(-1) to 4000 cm^(-1).Optical band gap energy of all deposited thin films was analyzed by ultraviolet visible spectrophotometer,which varies from 3.35 eV to 3.19 eV with the increase of x_(Cu) from 0 to 6.5%*** energy of the deposited thin films increases from 115 meV to 228 meV with the increase of x_(Cu) from 0 to 6.5% respectively.

关键词： Cu-ZnO thin films RF/DC sputtering technique X-ray diffraction atomic force microscope optical property urbach energy

Comprehensive study of electronic polarizability and band gap of B_(2)O_(3)-Bi_(2)O_(3)-ZnO-SiO_(2)glass network

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Journal of Advanced Dielectrics 2017年第5期7卷 25-31页

作者： Iskandar Shahrim Mustafa Nur Ain Nabilah Razali Nurul Zahirah Noor Azman Nor Zakiah Yahaya Muhammad Zulhafiz Mohamad Zaini Nur Lina Rusli Muhammad Bakhsh Nizamani Halimah Mohamed Kamari School of Physics University of Science Malaysia 11800 USMPulau PinangMalaysia Institute of Nano-optoelectronics Research University of Science Malaysia 11800 USM Pulau PinangMalaysia School of Distance Education University of Science Malaysia 11800 USM Pulau PinangMalaysia Science Faculty University Putra Malaysia 43400 SerdangSelangorMalaysia

Quaternary glasses were successfully fabricated using melt quenching technique based on the chemical compound composition(x)Bi_(2)O_(3)–(0:5-x)ZnO-(0.2)B_(2)O_(3)–(0.3)SiO_(2),where(x=0.1,0.2,0.3,0.4,0.45)*** sources of SiO_(2)was produced from rice husk ash(RHA)at 99.36%of SiO_(2).The urbach energy was increased from 0.16 eV to the 0.29 eV as the mole of Bi_(2)O_(3)increased in the glass *** indirect energy band gap is indicated in decrement pattern with 3.15 eV towards 2.51 *** results of urbach energy and band gap energy that were obtained are due to the increment of Bi^(3+)ion in the glass *** refractive indexes for the prepared glasses were evaluated at 2.36 to 2.54 based on the Lorentz–Lorentz formulation which correlated to the energy band *** calculated of molar polarizability,electronic polarizability and optical basicity exemplify fine complement to the Bi_(2)O_(3)addition in the glass *** glass sample was indicated in amorphous state.

关键词： urbach energy energy band gap optical polarizability Lorentz-Lorentz X-ray powder diffraction

Incorporation of Ag into Cu(In,Ga)Se_(2) films in low-temperature process

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Chinese Optics Letters 2021年第11期19卷 149-154页

作者： Zhaojing Hu Yunxiang Zhang Shuping Lin Shiqing Cheng Zhichao He Chaojie Wang Zhiqiang Zhou Fangfang Liu Yun Sun Wei Liu Institute of Photoelectronic Thin Film Devices and Technology of Nankai University Key Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinEngineering Research Center of Thin Film Photoelectronic TechnologyMinistry of EducationTianjin 300350China

Chalcopyrite Cu(In,Ga)Se_(2)(CIGS) thin films deposited in a low-temperature process(450℃) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the urbach energy is also reduced with Ag doping. This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process.

关键词： Cu(In,Ga)Se_(2)thin film low-temperature deposition process Ag doping crystallinity urbach energy

The Signatures of Acid Concentration on the Optical Band Gap and Associated Band Tails of Chitosan from Shrimp for Application in Optoelectronic Devices

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Advances in Chemical Engineering and Science 2022年第1期12卷 1-12页

作者： Edwin Atego John O. Agumba Godfrey O. Barasa Department of Physical Sciences Jaramogi Oginga Odinga University of Science and Technology (JOOUST) Bondo Kenya

Over the recent years, the global increase of electronic wastes from electrical and electronic devices (e-wastes) has been on an alarming trend in quantity and toxicity and e-wastes are non-biodegradable resulting in its cumulative increase over time. Changes in technology and unrestricted regional movement of electrical devices have facilitated the generation of more e-wastes leading to high levels of air, soil and water pollution. To address these challenges, biodegradable organic components such as chitosan have been used to replace their inorganic counterparts for optoelectronic device applications. However, in-depth knowledge on how such materials can be used to tune the optical properties of their hybrid semiconductors is unrivaled. Thus, systematic studies of the interplay between the preparation methods and optical band gap and Urbach energy of such organic components are vital. This study has thus been dedicated to map out the effect of acid concentrations during chitosan extraction on the corresponding optical band gap and Urbach energy with a view to improving its applications in optoelectronic devices. The, 1.0 to 2.5 molar hydrochloric acid (HCl) was used for 12 hours at room temperature during demineralization and 2.0 molar sodium hydroxide (NaOH) during deprotonation processes. The absorbance spectrum of the samples was collected by UV-Vis spectrophotometer and band gap energies were analyzed by performing Tauc’s plot. This study revealed that the energy band gap of chitosan extracted from 1 M HCl, 1.5 M HCl, 2.0 M HCl and 2.5 M HCl were 3.72 eV, 3.50 eV, 3.45 eV and 3.36 eV respectively. Furthermore,

关键词： Chitosa Optical Band Gap urbach energy Absorbance Spectrum Tauc Plot