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Thinner 2D α-MoO_(3) makes setting up memristors easier

Journal of Materiomics 2024年第6期10卷 1279-1289页

作者： Yukun Hong Shangui Lan Baojun Pan Zhixiang Zhang Bingbing Chen Lijie Zhang Peijian Wang Key Laboratory of Carbon Materials of Zhejiang Province College of Chemistry and Materials EngineeringWenzhou UniversityWenzhou325035ZhejiangChina Institute of New Materials&Industrial Technologies Wenzhou UniversityWenzhou 325024China ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang UniversityHangzhou311215China Macao Institute of Materials Science and Engineering(MIMSE) MUST-SUDA Joint Research Center for Advanced Functional MaterialsMacao University of Science and TechnologyTaipa999078MacaoChina Department of Energy Science and Engineering Nanjing Tech UniversityNanjing210009China

Two-dimensional(2D)metal oxide α-MoO_(3) shows great potentials because of its very high dielectric constant,air stability and anisotropic phonon ***,a method to produce ultrathin single crystallineα-MoO_(3) with high transferability for functional device architecture is ***,we report on the controllable synthesis of ultrathinα-MoO_(3) single crystals via chemical vapor deposition(CVD)assisted by plasma *** also carried out systematic computational work to explicate the mechanism for the slantly-oriented growth of thin nanosheets on plasma-pretreated *** method possesses certain universality to synthesize other ultrathin oxide materials,such as Bi_(2)O_(3) and Sb_(2)O_(3) ***-grownα-MoO_(3) presents a high dielectric constant(≈40),ultrathin thickness(≈3 nm)and high *** withα-MoO_(3) as the functional layers show excellent performance featuring high on/off ratio of approximately 104,much lower set voltage around 0.5 V,and highly repetitive voltage sweep *** power consumption of MoO_(3) memristors is significantly reduced,resulted from reduced thickness of the MoO_(3) *** crystal ultrathinα-MoO_(3) shows great potentials in post-Moore memristor and the synthesis of CVD assisted by plasma pretreatment approach points to a new route for materials growth.

关键词： ultrathin molybdenum trioxide Thickness controlling High transferability Memristor Low power consumption

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