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Fabrication and manipulation of nanosized graphene homojunction with atomically-controlled boundaries

Nano Research 2020年第12期13卷 3286-3291页

作者： Hui Chen De-Liang Bao Dongfei Wang Yande Que Wende Xiao Yu-Yang Zhang Jiatao Sun Shixuan Du Hong-Jun Gao Institute of Physics and University of Chinese Academy of Sciences Beijing100190China CAS Key Laboratory of Vacuum Physics University of Chinese Academy of SciencesBeijing100049China

Controlling the atomic configurations of structural defects in graphene nanostructures is crucial for achieving desired ***,we report the controlled fabrication of high-quality single-crystal and bicrystal graphene nanoislands(GNI)through a unique top-down etching and post-annealing procedure on a graphite ***-temperature scanning tunneling microscopy(STM)combined with density functional theory calculations reveal that most of grain boundaries(GBs)formed on the bicrystal GNIs are 5-7-5-7 *** nanodomains separated by a 5-7-5-7 GB are AB stacking and twisted stacking with respect to the underlying graphite substrate and exhibit distinct electronic properties,forming a graphene *** addition,we construct homojunctions with alternative AB/twisted stacking nanodomains separated by parallel 5-7-5-7 ***,the stacking orders of homojunctions are manipulated from AB/twist into twist/twist type through a STM *** controllable fabrication and manipulation of graphene homojunctions with 5-7-5-7 GBs and distinct stacking orders open an avenue for the construction of GBs-based devices in valleytronics and twistronics.

关键词： homojunction graphene nanoislands manipulations grain boundaries twisted stacking

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Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

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Progress in Natural Science:Materials International 2015年第4期25卷 291-299页

作者： S.Karamat S.Sonu?en ü.?elik Y.Uysall? E.?zg?nül A.Oral Department of Physics Middle East Technical University COMSATS Institute of Information Technology Faculty of Engineering and Natural Sciences Sabanc? University Nano Magnetics Instruments Ltd.

The present competition of graphene electronics demands an ef fi cient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to Si O2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene *** presence of different stacking sequences in the graphene layers in fl uence the electronic and optical properties; in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum(FWHM) value of 30 cm-1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm-1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm-1,respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm-1 as compare to single layer graphene which showed its dispersive natu

关键词： Chemical vapour deposition Graphene hexagonal crystals Bernal stacking twisted stacking Grain boundaries and hydrogen bubbling

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Chiral plasmonic nanostructure of twistedly stacked nanogaps

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Chinese Optics Letters 2021年第1期19卷 95-99页

作者： Jian Zhang Rui Tu Chao Huang Xiaoli Yao Xin Hu Haixiong Ge Xuefeng Zhang Institute of Advanced Magnetic Materials College of Materials&Environmental EngineeringHangzhou Dianzi UniversityHangzhou 310018China College of Electronics and Information Hangzhou Dianzi UniversityHangzhou 310018China Department of Materials Science and Engineering College of Engineering and Applied SciencesNanjing UniversityNanjing 210093China

Nanogap plasmonic structures with strong coupling between separated components have different responses to orthogonal-polarized light, giving rise to giant optical chirality. Here, we proposed a three-dimensional(3D) nanostructure that consists of two vertically and twistedly aligned nanogaps, showing the hybridized charge distribution within 3D *** is discovered that the structure twisted by 60° exhibits plasmonic coupling behavior with/without gap modes for different circular-polarized plane waves, showing giant chiral response of 60% at the wavelength of 1550 nm. By controlling the disk radius and the insulator layer, the circular dichroism signal can be further tuned between 1538 and 1626 nm.

关键词： metal-insulator-metal structure nanogaps gap mode twisted stacking charge distribution chiral response

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