检索结果-南通市图书馆

Modulated Quasi-plane tunneling current

在线全文

学校读者我要写书评

暂无评论

International Journal of Minerals,Metallurgy and Materials 1999年第1期13卷 44-46页

作者： Peng Feng Wenmin Dai (China Center of Advanced Science & Technology (World Laboratory ) P.O. Box 8730, Beijing 100080, China)(Applied Science School, University of Science and Technology Beijing, Beijing 100083, China) China Center of Advanced Science and Technology (World Laboratory) P.O. Box 8730 Beijing 100080 China Applied Science School University of Science and Technology Beijing Beijing 100083 China

A new tutmeling junction can be formed by an insulator layer inserting into a quantum well, and in the quantum well, a quasi-plane tunneling current can be formed by applying a tunneling voltage. If a P-N junction is grown on the quantum well, the tunneling current can be modulated by a P-N junction-bias voltage. The modulated quasi-plane tunneling current is not only related to the bias voltage, but also to the depth of the quantum well. It is analyzed that the P-N junction-bias voltage how to affect the tunneling current and a method of measuring the depth of the quantum well is presented.

关键词： quantum well tunneling current semiconductor device

Effectof Neutral Traps on tunneling current and SILC in Ultrathin Oxide Layer

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2002年第4期23卷 367-372页

作者：张贺秋毛凌锋许铭真谭长华北京大学微电子学研究所北京100871

The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- *** barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically *** is shown that the effect of neutral trap on tunneling cur- rent can not be *** tunneling current is increased when the neutral trap exists in the oxide *** simple m odel can be used to understand the occurring mechanism of stress induced leakage current.

关键词： tunneling current high- field stress ultrathin SIL C

Comparison of electron transmittances and tunneling currents in an anisotropic TiN_x/HfO_2/SiO_2/p-Si(100) metal-oxide-semiconductor(MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2010年第12期31卷 28-32页

作者： Fatimah A.Noor Mikrajuddin Abdullah Sukirno Khairurrijal Physics of Electronic Materials Research Division Faculty of Mathematics and Natural SciencesInstitut Teknologi BandungJalan Ganesa 10Bandung 40132Indonesia

Analytical expressions of electron transmittance and tunneling current in an anisotropic TiNx/HfO2/SiO2/p-Si（100） metal-oxide-semiconductor （MOS） capacitor were derived by considering the coupling of transverse and longitudinal energies of an electron. Exponential and Airy wavefunctions were utilized to obtain the electron transmittance and the electron tunneling current. A transfer matrix method, as a numerical approach, was used as a benchmark to assess the analytical approaches. It was found that there is a similarity in the transmittances calculated among exponential- and Airy-wavefimction approaches and the TMM at low electron energies. However, for high energies, only the transmit- tance calculated by using the Airy-wavefunction approach is the same as that evaluated by the TMM. It was also found that only the tunneling currents calculated by using the Airy-wavefunction approach are the same as those obtained under the TMM for all range of oxide voltages. Therefore, a better analytical description for the tunneling phenomenon in the MOS capacitor is given by the Airy-wavefunction approach. Moreover, the tunneling current density decreases as the titanium concentration of the TiNx metal gate increases because the electron effective mass of TiNx decreases with increasing nitrogen concentration. In addition, the mass anisotropy cannot be neglected because the tunneling currents obtained under the isotropic and anisotropic masses are very different.

关键词： Airy wavefunction anisotropic MOS exponential wavefunction transfer matrix method transmittance tunneling current

Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrodinger’s equation

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2019年第6期40卷 43-47页

作者： Endi Suhendi Lilik Hasanah Dadi Rusdiana Fatimah A. Noor Neny Kurniasih Khairurrijal Physics of Electronic Material Research Division Universitas Pendidikan Indonesia Bandung 40154 Indonesia Physics of Electronic Material Research Division Institut Teknologi Bandung Bandung 40132 Indonesia Earth Physics and Physics of Complex Systems Research Division Institut Teknologi Bandung Bandung 40132 Indonesia

The tunneling current in a graphene nanoribbon tunnel field effect transistor(GNR-TFET) has been quantum mechanically modeled. The tunneling current in the GNR-TFET was compared based on calculations of the Dirac-like equation and Schrodinger’s equation. To calculate the electron transmittance, a numerical approach-namely the transfer matrix method(TMM)-was employed and the Launder formula was used to compute the tunneling current. The results suggest that the tunneling currents that were calculated using both equations have similar characteristics for the same parameters, even though they have different values. The tunneling currents that were calculated by applying the Dirac-like equation were lower than those calculated using Schrodinger’s equation.

关键词： graphene nanoribbon tunnel field effect transistor tunneling current Schrodinger equation Dirac-like equation

Effect of coherent-light phase on tunneling process

在线全文

学校读者我要写书评

暂无评论

Journal of University of Science and Technology Beijing 2003年第4期10卷 61-64页

作者： Peng FengApplied Science School, University of Science and Technology Beijing, Beijing 100083, China Univ Sci & Technol Beijing Appl Sci Sch Beijing 100083 Peoples R China

The coherent-light-driven tunneling in double quantum wells has been *** electrons are coupled to a system of phonons and subjected to the two beams of coherentlyoptical waves. By adopting a gauge to both the external field and the phonon field, the phonon fieldoperators in the Schrodinger equations are eliminated. In this way, an expression of the tunnelingcurrent is conveniently derived considering the relaxation effect. It is shown that under theintense laser field, the tunneling current oscillates rapidly with time at low temperature. Theduration of the oscillations is related to the temperature. By adjusting the phase difference of thetwo light-beams, the oscillation frequency can be modulated.

关键词： tunneling current quantum wells gauge transformation

Influence of the finite size effect of Si（001）/SiO2 interface on the gate leakage current in nano-scale transistors

在线全文

学校读者我要写书评

暂无评论

Journal of Southeast University(English Edition) 2019年第3期35卷 341-350页

作者： Li Haixia Ji Aiming Zhu Canyan Mao Lingfeng School of Rail Transportation Soochow UniversitySuzhou 215006China School of Information Engineering Suqian CollegeSuqian 223800China School of Computer & Communication Engineering University of Science & Technology BeijingBeijing 100083China

With the device size gradually approaching the physical limit, the small changes of the Si(001)/SiO 2 interface in silicon-based devices may have a great impact on the device characteristics. Based on this, the bridge-oxygen model is used to construct the interface of different sizes, and the finite size effect of the interface between fine electronic structure silicon and silicon dioxide is studied. Then, the influence of the finite size effect on the electrical properties of nanotransistors is calculated by using the first principle. Theoretical calculation results demonstrate that the bond length of Si-Si and Si-O shows a saturate tendency when the size increases, while the absorption capacity of visible light and the barrier of the interface increase with the decrease of size. Finally, the results of two tunneling current models show that the finite size effect of Si(001)/SiO 2 interface can lead to a larger change in the gate leakage current of nano-scale devices, and the transition region and image potential, which play an important role in the calculation of interface characteristics of large-scale devices, show different sensitivities to the finite size effect. Therefore, the finite size effect of the interface on the gate leakage current cannot be ignored in nano-scale devices.

关键词： finite size effect tunneling current nano-scale transistor

New Derivation of Simple Josephson Effect Relation Using New Quantum Mechanical Equation

在线全文

学校读者我要写书评

暂无评论

Natural Science 2016年第3期8卷 85-88页

作者： Rashida Ismat Abdalrahman Rasha Abd Elhai Mohammad Taha Isam Ahmed Attia Mubarak Dirar Abd Allah Department of Physics College of Science Sudan University of Science and Technology Khartoum Sudan Department of Physics College of Education Majimaah University Zulfi KSA

A relation of the Josephson current density equation is successfully derived;this is done through a new derivation of the equation of quantum by neglecting kinetic Newtonian term in the energy expression.

关键词： Quantum Mechanics Superconductors Josephson Effect tunneling current

CHARACTERISTICS OF SINGLE ELECTRON tunneling IN DOUBLE BARRIER tunneling JUNCTIONS WITH ALKANETHIOL tunneling BARRIERS

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

CHARACTERISTICS OF SINGLE ELECTRON TUNNELING IN DOUBLE BARRI...

Study of low weight percentage filler on dielectric properties of MWCNT-epoxy nanocomposites

Asia Conference on Nanoscience and Nanotechnology Abstracts Book

作者： YUHSUKE YASUTAKE TOSHIHARU TERANISHI YUTAKA MAJIMA Department of Physical Electronics Tokyo Institute of Technology2-12-1 O-okayamaMeguro-kuTokyo 152-8552Japan Graduate School of Pure and Applied Sciences University of Tsukuba1-1-1 TennodaiTsukubaIbaraki 305-8571Japan Department of Physical Electronics Tokyo Institute of TechnologySolution Oriented Research for Science and Technology （SORST）Japan Science and Technology Agency（JST）2-12-1 O-okayamaMeguro-kuTokyo 152-8552Japan

＜正＞ In the nanomechanical double barrier tunneling junction （DBTJ）, the polarity and the number of electrons on the Coulomb island strongly depend on the tunneling resistance between the Coulomb island and two reservoirs, in which the single electron shuttle will occur if the tunneling resistance ratio of two junctions inverses due to the nanomechanical motion of Coulomb island during the self-excitation process. The control of the tunneling resistances in the nanomechanical single electron system is one of the most basic and important issue to realize the single electron shuttle with self-excitation. As a flexible tunneling barrier, alkanethiol self-assembled monolayer （SAM） is the candidate of the protection group of colloidal Au nanoparticle, since its tunneling resistance can be controlled by selecting the number of methylene *** we demonstrate Coulomb staircases in DBTJ structure consisted of scanning probe/vacuum gap/alkanethiol/Au core/alkanethiol/Au （111） electrode as a function of a set-point current of scanning tunneling spectroscopy. The tunneling resistances of probe-Au nanoparticle （R1） and Au nanoparticle-Au （111） electrode （R2） are estimated by fitting a theoretical Coulomb staircase curve into the experimental tunneling current-voltage characteristic. R2 of octanethiol protected Au nanoparticle, corresponding to the tunneling resistances of alkanethiol itself, has been estimated as one order of magnitude larger than that of hexanethiol protected Au nanoparticle. R1 is inversely proportional to the set point current as R1/R2 larger than 1. The relationship between R1/R2 and the DBTJ structure will be discussed as a function of the set-point current

关键词： Coulomb blockade tunneling current scanning tunneling microscopy.

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

Journal of Advanced Dielectrics 2016年第3期6卷 72-80页

作者： Manindra Trihotri U.K.Dwivedi M.M.Malik Fozia Haque Khan M.S.Qureshi Department of Physics Maulana Azad National Institute of Technology Bhopal 462051(MP)India Department of Physics Laxmi Narain College of Technology Bhopal 462021(MP)India Department of Physics Amity University JaipurRajasthan

An attempt is made to study the effect of low weight percentage multiwall carbon nanotube(MWCNT)powder on dielectric properties of MWCNT reinforced epoxy *** that MWCNT(of different low weight percentage)reinforced epoxy composite was prepared by dispersing the MWCNT in *** were prepared by solution casting process and characterized for their dielectric properties such as dieletric constant(ε′),dielectric dissipation factor(tan δ)and AC conductivity(σ_(ac)).The main objective is the investigation of the dieletric properties of the prepared samples at the low weight percentage of the filler at different temperatures and *** the two mechanisms of electrical conduction,first the leakage current obtained by the formation of a percolation network in the matrix and the other by tunneling of electrons formed among conductors nearby(tunneling current);here we are getting conduction by the second ***,leakage current makes more contribution to conductivity than tunneling *** dissipation factor at 250 Hz frequency is greater than all other frequencies and starts increasing from 60℃.The peak height of the transition temperature decreases with increasing *** study shows that the addition of a low weight percentage of MWCNT can modify considerably the electrical behavior of epoxy nanocomposites without chemical functionalization of fller.

关键词： Dielectric properties tunneling current MWCNT epoxy nanocomposites