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Type Inversion and Certain Physical Properties of Spray Pyrolysed SnO_2:Al Films for Novel transparent electronics Applications

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Journal of Materials Science & Technology 2014年第2期30卷 97-102页

作者： K.Ravichandran K.Thirumurugan Post Graduate and Research Department of Physics AVVM Sri Pushpam College(Autonomous)

Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The AI doping level varies between 0 and 30 at.% in the step of 5 at.%. The resistivity （p） is the minimum （0.38 Ω cm） for 20 at.% of AI doping. The possible mechanism behind the phenomenal zig-zag variation in resistivity with respect to AI doping is discussed in detail. The nature of conductivity changes from n-type to p-type when the AI doping level is 10 at.%. The results show that 20 at.% is the optimum doping level for good quality p-type SnO2：AI films suitable for transparent electronic devices.

关键词： Tin oxide films P-type transparent conducting oxide (TCO) Spray pyrolysis transparent electronics Electrical properties Optical properties

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Wireless phototherapeutic contact lenses and glasses with red light-emitting diodes

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Nano Research 2020年第5期13卷 1347-1353页

作者： Young-Geun Park Eunkyung Cha Hyeon Seok An Kyoung-Pil Lee Myoung Hoon Song Hong Kyun Kim Jang-Ung Park Nano Science Technology Institute Department of Materials Science and EngineeringYonsei UniversitySeoul 03722Republic of Korea Center for Nanomedicine Institute for Basic Science(IBS)Seoul 03722Republic of Korea Department of Ophthalmology School of MedicineKyungpook National UniversityDaegu41944Republic of Korea School of Materials Science and Engineering Ulsan National Institute of Science and Technology(UNIST)Ulsan 44919Republic of Korea

Light-mediated therapeutics have attracted considerable attention as a method for the treatment of ophthalmologic diseases,such as age-related macular degeneration,because of their non-invasiveness and the effectiveness to ameliorate the oxidative stress of retinal ***,the current phototherapeutic devices are opaque,bulky,and tethered forms,so they are not feasible for use in continuous treatment during the patient’s daily ***,we report wireless,wearable phototherapeutic devices with red light-emitting diodes for continuous *** light-emitting diodes were formed to be conformal to three-dimensional surfaces of glasses and contact ***,fabricated light-emitting diodes had either transparency or a miniaturized size so that the user’s view is not ***,these devices were operated wirelessly with control of the light *** addition,in-vitro and in-vivo tests using human retinal epithelial cells and a live rabbit demonstrated the effectiveness and reliable operation as phototherapeutic devices.

关键词： transparent electronics wearable healthcare red light-emitting diodes phototherapies

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Flexible transparent Near-Infrared Photodetector Based on 2D Ti_(3)C_(2) MXene-Te Van Der Waals Heterostructures

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Chinese Journal of Chemistry 2021年第8期39卷 2141-2146页

作者： Chuqiao Hu La Li Guozhen Shen Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences&Center of Materials Science and Optoelectronic EngineeringUniversity of Chinese Academy of SciencesBeijing 100083China

Ti_(3)C_(2) MXe ne servi ng as superior electrical con ductors prese nts more specific performa nee such as tran spar ency,con ductivity tha n gold(Au),and even could form a heterostructure with active materials of the functional ***,a Ti_(3)C_(2) MXene-Te microplate van der Waals heterostructure based tran spare nt near-i nfrared photodetector(PD)is exploited.

关键词： Semiconductors Ti_(3)C_(2)T_(x)MXene transparent electronics Tellurium Flexible near infrared photodetector Conducting materials

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Fully transparent flexible transistors built on metal oxide nanowires

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Frontiers of Optoelectronics 2010年第3期3卷 217-227页

作者： Di CHEN Jing XU Guozhen SHEN Wuhan National Laboratory for Optoelectronics College of Optoelectronic Science and EngineeringHuazhong University of Science and Technology School of Chemistry and Chemical Engineering Huazhong University of Science and Technology

transparent electronics has attracted great research efforts in recent years due to its potential to make significant impact in many area, such as next generation displays, ultraviolet(UV) detectors, solar cells,charge-coupled devices(CCDs), and so on. Central to the realization of transparent electronics is the development of high performance fully transparent thin-film transistors(TFTs). One-dimensional(1-D) nanostructures have been the focus of current researches due to their unique physical properties and potential applications in nanoscale electronics and optoelectronics. Among 1-D nanostructures,transparent metal oxide nanowires are one of the best candidates to make fully transparent TFTs. We provide in this paper the most recent development on the fabrication of fully transparent TFT using metal oxide nanowires as the device elements. First, the review article gives a general introduction about the development of transparent electronics using different kinds of materials as the devices elements, including organic semiconductors, metal oxide thin films, and metal oxide nanowires. Second, the growth of metal oxide nanowires using vapor phase methods governed by two different growth mechanisms: vaporsolid mechanism and vapor-liquid-solid mechanism,respectively, are described. Third, the fabrication of transparent and flexible TFTs using different metal oxides nanowires is comprehensively described. In conclusion,the challenges and prospects for the future are discussed.

关键词： thin-film transistor (TFT) field-effect transistor (FET) transparent electronics nanowires metal oxide

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