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Effect of Reaction Temperature and Time on the Structural Properties of Cu(In,Ga)Se_2 thin films Deposited by Sequential Elemental Layer Technique

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Journal of Materials Science & Technology 2007年第4期23卷 499-503页

作者： Saira RIAZ Shahzad NASEEM Centre for Solid State Physics University of the Punjab QACLahore-54590Pakistan

thin films of copper indium gallium selenide Cu（In,Ga）Se2 （CIGS） were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound formation, and were studied at temperature as high as 1250℃ for the first time. These films were concurrently studied for their structural properties by X-ray diffraction （XRD） technique. The XRD analyses include phase transition studies, grain size variation and microstrain measurements with the reaction temperature and *** has been observed that there are three distinct regions of variation in all these parameters. These regions belong to three temperature regimes：〈450℃, 450-950℃, and 〉950℃. It is also seen that the compound formation starts at 250℃, with ternary phases appearing at 350℃ or above. Whereas, there is another phase shift at 950℃ without any preference to the quaternary compound.

关键词： Cu(In,Ga)Se2 (CIGS) X-ray Diffraction thin films Structural analysis

Influence of deposition rate on the properties of ZrO_2 thin films prepared in electron beam evaporation method

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Chinese Optics Letters 2004年第6期2卷 364-366页

作者：张东平占美琼方明贺洪波邵建达范正修 R&D Center for Optical thin Film Coatings Shanghai Institute of Optics and Fine Mechanics Chinese Science Academy Shanghai 201800 R&D Center for Optical thin Film Coatings Shanghai Institute of Optics and Fine Mechanics Chinese Science Academy Shanghai 201800rO2 thin films were prepared in electron beam thermal evaporation method. And the deposition rate changed from 1.3 to 6.3 nm/s in our study. X-ray diffractometer and spectrophotometer were employed to characterize the films. X-ray diffraction (XRD) spectra pattern shows that films structure changed from amorphous to polycrystalline with deposition rate increasing. The results indicate that internal stresses of the films are compressive in most case. Thin films deposited in our study are inhomogeneous and the inhomogeneity is enhanced with the deposition rate increasing.

ZrO2 thin films were prepared in electron beam thermal evaporation method. And the deposition rate changed from 1.3 to 6.3 nm/s in our study. X-ray diffractometer and spectrophotometer were employed to characterize the films. X-ray diffraction (XRD) spectra pattern shows that films structure changed from amorphous to polycrystalline with deposition rate increasing. The results indicate that internal stresses of the films are compressive in most case. thin films deposited in our study are inhomogeneous, and the inhomogeneity is enhanced with the deposition rate increasing.

关键词： Deposition Electron beams Evaporation Polycrystalline materials thin films X ray diffraction X ray spectrophotometers

Structure,ferroelectric,and enhanced fatigue properties of sol–gel-processed new Bi-based perovskite thin films of Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)

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Chinese Physics B 2024年第5期33卷 608-615页

作者：宋伟宾席国强潘昭刘锦叶旭斌刘哲宏王潇单鹏飞张林兴鲁年鹏樊龙龙秦晓梅龙有文 Department of Physics Shanghai Normal UniversityShanghai 200234China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Institute for Advanced Materials Technology University of Science and Technology BeijingBeijing 100083China Songshan Lake Materials Laboratory Dongguan 523808China Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China

Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric *** Bi-based perovskite thin films Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)(BCT–PT) are deposited on Pt(111)/Ti/SiO_(2)/Si substrates in the present study by the traditional sol–gel *** structures and related ferroelectric and fatigue characteristics are studied *** BCT–PT thin films exhibit good crystallization within the phase-pure perovskite structure,besides,they have a predominant(100) orientation together with a dense and homogeneous *** remnant polarization(2P_(r)) values at 30 μC/cm^(2) and 16 μC/cm^(2) are observed in 0.1BCT–0.9PT and 0.2BCT–0.8PT thin films,*** intriguingly,although the polarization values are not so high,0.2BCT–0.8PT thin films show outstanding polarization fatigue properties,with a high switchable polarization of 93.6% of the starting values after 10^(8) cycles,indicating promising applications in ferroelectric memories.

关键词： ferroelectric thin films perovskite PbTiO_(3)-BiMeO_(3)

Micromechanics of substrate-supported thin films

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Acta Mechanica Sinica 2018年第2期34卷 381-391页

作者： Wei He Meidong Han Shibin Wang Lin-An Li Xiuli Xue Department of Mechanics Tianjin University Department of Engineering Mechanics Hunan University of Science and Technology

The mechanical properties of metallic thin films deposited on a substrate play a crucial role in the performance of micro/nano-electromechanical systems(MEMS/NEMS)and flexible electronics. This article reviews ongoing study on the mechanics of substrate-supported thin films, with emphasis on the experimental characterization techniques,such as the rule of mixture and X-ray tensile testing. In particular, the determination of interfacial adhesion energy, film deformation, elastic properties and Bauschinger effect are discussed.

关键词： thin films Deformation Adhesion Elastic property Bauschinger effect

Effects of K ions doping on the structure, morphology and optical properties of Cu_2FeSnS_4 thin films prepared by blade-coating process

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Optoelectronics Letters 2017年第4期13卷 291-294页

作者： WANG Shuo MA Rui-xin WANG Cheng-yan LI Shi-na WANG Hua School of Metallurgy and Ecological Engineering University of Science and Technology Beo＇ing Beo＇ing 100083 China Faculty of Metallurgical and Energy Engineering Kunming University of Science and Technology Kunming 650093 China Beijing Key Laboratory of Special Melting and Preparation of High-end Metal Materials Beijing 100083 China

Quaternary chalcogenide Cu2FeSnS4 （CFTS） nanoparticles, as a kind of potential absorber layer material in thin film solar cells （TFSCs）, were successfully synthesized by using a convenient solvothermal method. Alkali element K is incorporated into CFTS thin films in order to fiLrther improve the surface morphology and the optical properties of related films. X-ray diffraction （XRD）, Raman spectroscopy and field emission scanning electron microscopy （FESEM） were used to characterize the phase purity, morphology and composition of CFTS particles and thin films. The results show that the particle elemental ratios of Cu/（Fe＋Sn） and Fe/Sn are 1.2 and 0.9, respectively, which are close to the characteristics of stoichiometric CFTS. The band gaps of CFTS films before and after doping K ions are estimated to be 1.44 eV and 1.4 eV with an error of ±0.02 eV.

关键词： Energy gap Field emission microscopes Morphology Optical properties Scanning electron microscopy Semiconductor doping Synthesis (chemical) thin film solar cells thin films X ray diffraction

Characteristic evaluation on spray-deposited WFTO thin films as a function of W doping ratio

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Rare Metals 2014年第4期33卷 433-441页

作者： G.Turgut E.F.Keskenler S.Aydin D.Tatar E.Sonmez S.Dogan B.Duzgun Department of Physics Education Kazim Karabekir Education FacultyAtatürk University Department of Nanotechnology Faculty of EngineeringRecep Tayyip Erdogan University Department of Electrical and Electronics Engineering Faculty of Engineering and ArchitectureBalikesir University

Abstract In this work, F and F ＋ W simultaneously doped SnO2 highly transparent conducting thin films were depos- ited on glass substrates at （500 4± 5） ℃ temperature by the spray pyrolysis method. Microstructural, morphological, electrical and optical properties of FrO films were investi- gated as a function of tungsten （W） doping, in the range from 0 to 5 at%. X-ray diffraction patterns show that the films exhibit a tetragonal cassiterite structure and （200） preferen- tial orientation of FTO film, and the relative strength of these peaks changes with altering the W doping ratio. The pre- ferred growth of （211） changed to （200） plane with 2 at% W doping level and 3 at% W-doped film had （200） orientation and with further doping, this changed to （110） orientation. The scanning electron microscopy and atomic force microscopy images of the films indicate that the films are made up of dense small particles of a pyramidal shape and have a smooth surface. It was observed that the surface morphology of the films did not change much when the W element was inserted to the FrO structure. It was found that the sheet resistance values of the films varied with W doping ratio, and 2 at% W-doped FTO thin film exhibited the lowest values of sheet resistance （1.12Ω）. Also, the highest figure of merit, infrared reflectivity and optical band gap values werecalculated for 2 at% W-doped FTO film as 50.9× 10-2 Ω-1, 98.82 % and 4.13 eV, respectively. These results make the films an effective candidate for usage in many optoelectronic applications and photo-thermal conversion of solar energy.

关键词： WFTO FrO Spray pyrolysis thin films Lattices

Influence of growth conditions on the electrochemical synthesis of SnS thin films and their optical properties

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International Journal of Minerals,Metallurgy and Materials 2016年第3期23卷 348-357页

作者： Hosein Kafashan Farid Jamali-Sheini Reza Ebrahimi-Kahrizsangi Ramin Yousefi Advanced Materials Research Center Materials Engineering DepartmentNajafabad BranchIslamic Azad UniversityNajafabadIsfahanIran Department of Physics Ahvaz BranchIslamic Azad UniversityAhvazIran Department of Physics Masjed-Soleiman BranchIslamic Azad University(I.A.U)Masjed-SoleimanIran

Tin sulfide （SnS） thin films were prepared by electrodeposition onto fluorine-doped tin oxide （FTO） glass substrates using an aqueous solution containing SnCl2 and Na2S2O3 at various deposition potentials （L） and bath concentrations. The pH value and temperature of the solution were kept constant. The deposited films were characterized using X-ray diffraction （XRD）, field-emission scanning electron microscopy （FESEM）, photoluminescence （PL）, and ultraviolet-visible （UV-Vis） spectroscopy. The FESEM images demonstrated that changes in the deposition potential （E） and solution concentration led to marked changes in the morphology of the deposited SnS films. Energy-dispersive X-ray analysis （EDXA） results showed that the SrdS atomic ratio strongly depended on both the solution concentration and the deposition potential. To obtain an SrdS atomic ratio approximately equal to l, the optimal Sn2＋/S2O2- 3 molar ratio and E parameter were 1/8 and -1.0 V, respectively. The XRD patterns showed that the synthesized SnS was obviously polycrystalline, with an orthorhombic structure. The effects of the variations of bath concentration and deposition potential on the band-gap energy （Eg） were studied using PL and UV-Vis experiments. The PL spectra of all the SnS films contained two peaks in the visible region and one peak in the infrared （IR） region. The UV-Vis spectra showed that the optical band-gap energy varies from 1.21 to 1.44 eV.

关键词： tin sulfide thin films electrodeposition structural properties optical properties

Assembly and Applications of Carbon Nanotube thin films

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Journal of Materials Science & Technology 2008年第4期24卷 447-456页

作者： Hongwei ZHU Bingqing WEI Department of Mechanical Engineering University of Delaware Newark DE 19716 USA Key Laboratory for Advanced Manufacturing by Material Processing Technology Department of Mechanical Engineering Tsinghua University Beijing 100084 China

The ultimate goal of current research on carbon nanotubes （CNTs） is to make breakthroughs that advance nanotechnological applications of bulk CNT materials. Especially, there has been growing interest in CNT thin films because of their unique and usually enhanced properties and tremendous potential as components for use in nano-electronic and nano-mechanical device applications or as structural elements in various devices. If a synthetic or a post processing method can produce high yield of nanotube thin films, these structures will provide tremendous potential for fundamental research on these devices. This review will address the synthesis, the post processing and the device applications of self-assembled nanotube thin films.

关键词： Carbon nanotubes thin films

Lithium intercalation mechanism for β-SnSb in Sn-Sb thin films

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International Journal of Minerals,Metallurgy and Materials 2011年第2期18卷 216-222页

作者： Qiang Ru Qin Tian She-jun Hu Ling-zhi Zhao Laboratory of Quantum Information Technology School of Physics and Telecommunication Engineering South China Normal University Guangzhou 510006 China Department of Chemistry South China Normal University Guangzhou 510006 China

Based on the first-principles plane wave pseudo-potential method, the electronic structure and electrochemical performance of LixSn4Sb4 （x=2, 4, 6, and 8） and LixSn12-xSb4 （x=9, 10, 11, and 12） phases were calculated. A Sn-Sb thin film on a Cu foil was also prepared by radio frequency magnetron sputtering. The surface morphology, composition, and lithium intercalation/extraction behavior of the fabricated film were characterized by scanning electron microscopy （SEM）, X-ray diffraction （XRD） and cyclic voltammetry （CV）. Lithium atoms can easily insert into and extract out of the β-SnSb cell due to the low lithium intercalation formation energy. It is found that lithium atoms first occupy the interstitial sites, and then Sn atoms at the lattice positions are replaced by excessive lithium. The dissociative Sn atoms continue to produce different Li-Sn phases, which will affect the electrode stability and lead to the undesirable effect due to their large volume expansion ratio. The calculated lithium intercalation potential is stable at about 0.7 V, which is consistent with the experimental result.

关键词： lithium batteries first-principles Sn-Sb alloys electronic structure thin films