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Journal of Advanced Ceramics 2020年第6期9卷 693-702页

作者： Jie XU Qiling LU Jinfeng LIN Cong LIN Xinghua ZHENG Tengfei LIN Xiao WU Key Laboratory of Eco-materials Advanced Technology College of Materials Science and EngineeringFuzhou UniversityFuzhou 350108China

Er^(3+)-doped Ba_(0.85)Ca_(0.15)Ti_(0.9)Zr_(0.1O3)(xEr-BCTZ,x=0,0.005,0.01,0.015)multifunctional thick films were prepared by the tape-casting method,using sol-gel-derived nano-sized powders as the matrix *** surface morphologies,photoluminescence,and electrical properties were *** microstructures with pure perovskite structure were obtained in the thick *** doping an appropriate amount of Er^(3+),the samples exhibit superior up-conversion photoluminescence performance and simultaneously enhanced electrical *** addition,relatively higher texture fractions(with the largest value of 83.5%)were realized through introducing plate-like BaTiO_(3) templates to make the thick film grow by the[001]_(c) *** the ferro-/piezoelectric properties of the thick films were further improved,showing potential in the applications of micro-optoelectronic devices.

关键词： thick films texture ferroelectric piezoelectric photoluminescence

Preparation and characterization of SiO_2/TiO_2/methylcellulose hybrid thick films for optical waveguides

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Chinese Optics Letters 2005年第7期3卷 399-401页

作者：杨军张昕宇王沛明海吴云霞谢建平张俊颖 Department of Physics Structure Research Laboratory University of Science and Technology of China Hefei 230026Received November 8 2004

SiO_2/TiO_2/methylcellulose composite materials processed by the sol-gel technique were studied for optical waveguide applications. With the help of methylcellulose, an organic binder, SiO2/TiO2/methylcellulose hybrid thick films were prepared by a single spin-coating processes. After annealing at 70 °C for an hour, 2.5-μm crack-free and dense organic-inorganic hybrid optical films with a refractive index of 1.537 were achieved. Optical losses of plane waveguide made up of those films and ordinary slide glass substrate are around 0.3 dB/cm at 650 nm. Scanning electronmicroscopy (SEM) and UV-visible spectroscopy (UV-VIS), have been used to characterize the thick films.

关键词： Annealing Cellulose films Characterization Microscopic examination Optical waveguides Refractive index Scanning electron microscopy Silica Sol gels Spin coating thick films Titanium dioxide

Investigation of low-temperature cathodoluminescence mechanism of Er-doped Ga N thick films by ion implantation

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Chinese Optics Letters 2016年第5期14卷 69-72页

作者：王晓丹莫亚娟曾雄辉毛红敏王建峰徐科 Department of Physics Suzhou University of Science and Technology Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou Nanowin Science and Technology Co. Ltd.

Er ions are implanted into the GaN thick films grown by hydride vapor phase epitaxy. The implantation energy is 200 keV and the implantation doses are 1 × 10^13, 1 × 10^14, 1 × 10^15, and 5 × 10^15 atom/cm2, respectively. The effects of the implantation dose and annealing temperature on the GaN band-edge luminescence are investigated. The cathodoluminescence spectra from 82 to 323 K are measured for 1 × 10^15 atom/cm2- implanted GaN annealed at 1100℃. Luminescence peaks at 356, 362, 376, 390, and 414 nm are observed on the 82 K cathodoluminescence spectrum. When the temperature is increased to 150 K, the intensities of the 356 and 414 nm peaks are nearly unchanged and the 362,376, and 390 nm peaks disappear. The intensity ratio of 538 nm （2H11/2 →4 4I15/2） and 559 nm （4A3/2 →4I15/2） is increased with the increase in temperature. We try to shed light on the above interesting phenomena.

关键词： Cathodoluminescence Erbium Ion implantation Luminescence Temperature thick films

Effects of glass additions on energy storage performance of(Pb_(0.9)7La_(0.02))(Zr_(0.92)Sn_(0.05)Ti_(0.03))O_(3) antiferroelectric thick films

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Journal of Advanced Dielectrics 2013年第2期3卷 47-51页

作者： Shengchen Chen Tongqing Yang Jinfei Wang Xi Yao Functional Materials Research Laboratory Tongji UniversitySiping Road 1239Shanghai 20092P.R.China

50μm-thick(Pb_(0.9)7La_(0.02))(Zr_(0.92)Sn_(0.05)Ti_(0.03))O_(3) antiferroelectric(AFE)thick films with different amount of 0.8Pb_O-0.2B_(2)O_(3) glass additions were fabricated by the screen-printing method on alumina substrate,which was pre-coated with Pt as *** effects of glass additions on dielectric properties and energy storage performance were investigated in *** to the enhancement of breakdown strength(BDS)of the specimens by the addition of glass,the energy storage performances of the thick films could be greatly *** a result,with 3%glass addition,the BDS of the specimens were as high as 475 kV/cm,the maximum polarization of 34.8μC/cm^(2) and the maximum recoverable energy storage density of 7.4 J/cm^(3) were *** results indicated the(Pb_(0.9)7La_(0.02))(Zr_(0.92)Sn_(0.05)Ti_(0.03))O_(3) (PLZST)thick films have a promising potential application in capacitors for pulsed power systems.

关键词： Dielectric properties thick films microstructure energy storage

Lead-free Piezoelectric thick films for Transducer Applications

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Lead-free Piezoelectric Thick Films for Transducer Applicati...

Texture and self-biased property of an oriented M-type barium ferrite thick film by tape casting

2011年全国压电和声波理论及器件应用研讨会

作者： Wei REN Electronic Materials Research Laboratory,Key Laboratory of the Ministry of Education & International Center for Dielectric Research,Xi''an Jiaotong University,Xi''an 710049,China

＜正＞Demands for miniaturized devices integrated with microelectronics lead to great interests in the design and fabrication of film piezoelectric *** devices often require high-performance piezoelectric films with thickness above 1μ*** this study,two kinds of lead free piezoelectric thick films have been ***, K0.5Na0.5NbO3（KNN） and Bi0.5Na0.5TiO3（BNT） thick films have been prepared by PVP-modified chemical solution deposition process,*** effects of annealing temperature and PVP addition on the performances of KNN and BNT thick films were systematically investigated to improve crystallization and reduce the volatility of alkali ***,Bi0.5Na0.5TiO3-Bi0.5Na0.5TiO3（BNT-BNT） and K0.5Na0.5NbO3-Bi0.5Na0.5TiO3 （KNN-BNT） 0-3 composite thick films have been prepared by a modified powder/sol-gel solution composite process. The BNT and KNN fine ceramic powders were dispersed in the BNT precursor solutions,respectively to form the uniform slurries which were spin-coated on Pt/Ti02/Si02/Si *** influence of annealing temperature and weight ratio of the powder-to-solution on the structures and electrical properties of BNT-BNT and KNN-BNT 0-3 composite thick films has been *** dielectric constant and remnant polarization of the composite thick films increase with increasing annealing temperature and with decreasing the powder-to-solution ratio due to reduction of pores and improvement of film *** of the KNN and BNT based thick films on high frequency ultrasonic transducers will be discussed.

关键词： Lead-free piezoelectric thick films Transducers

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Chinese Physics B 2012年第6期21卷 490-493页

作者：陈大明刘颖力李元勋杨楷张怀武 State Key Laboratory of Electronic films and Integrated Devices University of Electronic Science and Technology of China

In this paper, the oriented M-type barium ferrite （BaM） thick films with different thicknesses are prepared by tape casting. It is found that the crystallographic alignment degree （f）, the pore and the squareness ratio （Mr/Ms） are not affected by the thickness of the film. XRD and SEM results show that the thick film has hexagonal morphology with a crystal texture of c-axis grains perpendicular to film plane. The hysteresis curve indicates that the BaM thick film exhibits a self-biased property with a remanent magnetization of 3.30 T, a squareness ratio （Mr/Ms） of 0.81, and a coercivity of 0.40 T. The results show that the BaM thick film has potential for use in self-biasing microwave devices, and also proves that the tape casting technique is capable of fabricating high-quality barium ferrite films, thus providing a unique opportunity to realize the large area production of thick film.

关键词： barium ferrite magnetic material thick films

Realizing high-performance ternary organic solar cell with thick active layer via incorporating a liquid crystalline small molecule as a third component

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Science China Chemistry 2017年第4期60卷 435-436页

作者： Alex K.-Y. Jen Department of Materials Science and Engineering University of Washington Seattle WA 98195 USA Department of Physics & Materials Science City University of Hong Kong Kowloon 999077 Hong Kong

In the past two decades, organic solar cells （OSCs） have at- tracted significant attention owing to their merits of achieving light-weight, flexible, low-cost devices [1,2]. Ternary OSC as an efficient way to improve the power conversion efficiencies （PCEs） of OSCs has inspired great interest from researchers to investigate ternary OSCs and result in many efficient de- vices. Ternary OSCs allow collecting high- and low-energy photons by separated semiconductors in a single active layer to minimize the thermalization loss and broaden absorption range to improve the performance of OSCs. However, most reported ternary OSCs only have active layer of about 100 nm in thickness.

关键词： Bins Butyric acid Carboxylation Coherent scattering Crystalline materials Hole mobility Molecules Organic solar cells thick films X ray scattering

Electrical properties of BaFe_(0.9)Sn_(0.1)O_(3)–BaCo_(0.02)^(Ⅱ)Co_(0.04)^(Ⅲ)Bi_(0.94)O_(3)composite thick-film thermistors

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Rare Metals 2020年第11期39卷 1321-1327页

作者： Chang-Lai Yuan Ying Luo Qin Feng Yun Yang Xiu-Juan Zhou Xin-Yu Liu School of Material Science and Engineering Guilin University of Electronic TechnologyGuilin541004China Guilin Academy of Air Force Guilin541004China

The BaFe_(0.9)Sn_(0.1)O_(3)-BaCo_(0.02)^(Ⅱ)Co_(0.04)^(Ⅲ)Bi_(0.94)O_(3)composite thick films were prepared by screen printing.X-ray diffraction(XRD)analysis confirms that the composite films are still composed of BaFe_(0.9)Sn_(0.1)O_(3)-BaCo_(0.02)^(Ⅱ)Co_(0.04)^(Ⅲ)Bi_(0.94)O_(3)*** the prepared BaFe_(0.9)Sn_(0.1)O_(3)-BaCo_(0.02)^(Ⅱ)Co_(0.04)^(Ⅲ)Bi_(0.94)O_(3)composite thick films,a linear relationship between the logarithmic resistivity and the reciprocal of the absolute temperature is observed,indicating an excellent NTC thermistor *** values of resistivity at 25℃,thermistor constant and activation energy,decreasing with BaCo_(0.02)^(Ⅱ)Co_(0.04)^(Ⅲ)Bi_(0.94)O_(3)content increasing,are in the range of 8.9-92,990Ω·cm,1,126-3,777 K and 0.097-0.325 eV,*** analysis shows that at higher BaCo_(0.02)^(Ⅱ)Co_(0.04)^(Ⅲ)Bi_(0.94)O_(3)content,the electrical properties of the composite films are mainly attributed to the contribution of grains and grain *** the gradual decrease of BaCo_(0.02)^(Ⅱ)Co_(0.04)^(Ⅲ)Bi_(0.94)O_(3)content,the grain boundaries affect strongly the electrical properties of the composite films.

关键词： thick films BaCo_(0.02)^(Ⅱ)Co_(0.04)^(Ⅲ)Bi_(0.94)O_(3) BaFe_(0.9)Sn_(0.1)O_(3) Electrical properties

Effect of the O2/Ar Pressure Ratio on the Microstructure and Surface Morphology of Epi-MgO/IBAD-MgO Templates for GdBa2Cu3O7？δ Coated Conductors

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Chinese Physics Letters 2014年第3期31卷 160-163页

作者： LUO Qiang LIU Lin-Fei XIAO Gui-Na LI Yi-Jie Department of Physics and Astronomy Shanghai Jiao Tong University Shanghai 200240

High-quality epi-MgO buffer layers under different O2/Ar pressure ratios are fabricated by rf magnetron sputtering on textured IBAD-MgO templates. Under the total deposition pressure remaining constant （14 Pa）, the effect of changing the ratio of O2/Ar pressure from 1：4 to 3：2 on the microstructure and surface morphology of epi-MgO films is studied. The microstructure and morphology of epi-MgO are fully characterized by x-ray diffraction, atom force microscope and scanning electron microscope. The best texture quality of epi-MgO with an out-plane Δω value of 1.8° and an in-plane Δ？ value of 5.22° are obtained under the ratio of O2/Ar pressure 3：2. Further, the surface morphology indicates that the surface of epi-MgO is smooth with rms surface roughness about 4.7 nm at O2/Ar pressure ratio 3：2. After that, GdBa2Cu3O7？δ （GBCO） layers are deposited on the CeO2 cap layer buffered epi-MgO/IBAD-MgO templates to assess the efficiency of such a buffer layer stack. The critical current density of GBCO films （thickness of 200 nm） is higher than 3 MA/cm2, indicating that epi-MgO/IBAD-MgO is promising for depositing superconducting layers with a higher critical current density.

关键词： MAGNETRON sputtering RESEARCH SURFACE morphology MICROSTRUCTURE thick films PHYSICS research

Film thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions

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Chinese Physics Letters 2010年第7期27卷 249-252页

作者：陈雷明李广成张燕郭艳峰 Zhengzhou Institute of Aeronautical Industry Management. Zhengzhou Henan 450015 National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences Beijing 100190

In this work, p-n junctions are made from directly depositing optimal doped La1.85Sr0.15CuO4 （LSCO） films on n-type Nb-doped SrTiO3 substrates. Film thickness controlled rectifying behaviors are strikingly displayed. The starting points of the diffusion voltage reduction Vd-on change clearly with varying film thickness. Vd-on and Tc coincide with each other when the film thickness is larger than 300 nm, indicating a close relation between the two parameters. However, when the film is very thin （〈 350 nm） a departure between the two parameters was also observed. A possible reason for this is discussed within the framework of an inhomogeneous Sehottky contact. Enhanced interface inhomogeneity due to the tensile strain appears to be the origin.

关键词： thick films LANTHANUM compounds SEMICONDUCTOR doping SUBSTRATES (Materials science) CHEMICAL reduction SCHOTTKY-barrier diodes