检索结果-南通市图书馆

Fabrication and characterization of NiCr-based films with high resistivity and low temperature coefficient of resistance

引用

Nanotechnology and Precision Engineering 2023年第2期6卷 33-40页

作者： Diaohao Zhai Yongping Chen Houming Zhai Yi Liu Shanghai Institute of Technical Physics Chinese Academy of SciencesShanghai 200083China University of Chinese Academy of Sciences Beijing 100049China

As a metal alloy,NiCr films have a relatively high resistivity and low temperature coefficient of resistance (TCR) and are widely used in electronic components and ***,the resistivity of pure NiCr is insufficient for high-resistance and highly stable film *** this study,a quaternary NiCrAlSi target (47:33:10:10,wt.%) was successfully used to prepare resistor films with resistivities ranging from 1000 to 10 000μΩcm and TCR within±100 ppm/*** oxygen flow was introduced during the sputtering *** films exhibit hightemperature stability at 450℃.The films were analyzed using Auger electron spectroscopy,x-ray diffraction,time-of-flight secondary-ion mass spectrometry,and x-ray photoelectron *** results show that the difference in the oxide proportion of the films caused the differences in *** near-zero TCR values were considered to be due to the competition between silicon and other *** study provides new insights into the electrical properties of NiCr-based films containing Si,which will drive the manufacturing of resistors with high resistivity and zero TCR.

关键词： NiCr magnetron sputtering resistor temperature coefficient of resistance ToF-SIMS XPS

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

La_(0.7)Ca_(0.3)MnO_(3-δ):Ag nanocomposite thin films with large temperature coefficient of resistance(TCR)

引用

Journal of Materiomics 2022年第4期8卷 799-805页

作者： Fei Jin Duojie Wu Yani Lu Zizhao Pan Meng Gu Hong Wang State Key Laboratory for Mechanical Behavior of Materials School of Electronic and Information EngineeringXi'an Jiaotong UniversityXi'an710049China Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhen518055GuangdongChina Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices&Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and TechnologyShenzhen518055GuangdongChina Faculty of Materials Science and Engineering Kunming University of Science and TechnologyKunming650093YunnanChina

In this work, oxygen vacancy-regulated La_(0.7)Ca_(0.3)MnO_(3-δ):Ag (LCMO:A) nanocomposite thin films onLaAlO_(3) (001) substrates were investigated to obtain films with large temperature coefficient of resistance(TCR) values. LCMO:A nanocomposite thin films were synthesized using pulsed laser deposition, andoxygen pressures during film deposition and annealing steps were optimized. As oxygen pressuresincreased, lattice parameter increased from 70 Pa to 100 Pa, Tp increased monotonically from 168 K to282 K, and average Mn^(4+) concentration in the film increased as indicated by X-ray photoemissionspectroscopy data. Record high TCR value of ~37% K^(-1) was achieved in LCMO:A nanocomposite thin filmprepared with optimal oxygen pressures, making this film promising candidate for applications inbolometers.

关键词： La_(0.7)Ca_(0.3)MnO_(3) Metal-insulator transition temperature Oxygen vacancies temperature coefficient of resistance

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Investigation on the Novel High-performance Copper/Graphene Composite Conductor for High Power Density Motor

引用

CES Transactions on Electrical Machines and Systems 2024年第1期8卷 80-85页

作者： Jiaxiao Wang Tingting Zuo Jiangli Xue Yadong Ru Yue Wu Zhuang Xu Yongsheng Liu Zhaoshun Gao Puqi Ning Tao Fan Xuhui Wen Li Han Liye Xiao Shanghai University of Electric Power Shanghai 200090Chinaand the Institute of Electrical EngineeringChinese Academy of SciencesShanghai 200090China the Institute of Electrical Engineering Chinese Academy of SciencesBeijing 100190China with Shanghai University of Electric Power Shanghai 200090China

High-performance Cu/Graphene composite wire synergistically strengthened by nano Cr_(3)C_(2) phase was directly synthesized via hot press sintering followed by severe cold plastic deformation, using liquid paraffin and CuCr alloy powder as the raw materials. Since graphene is in situ formed under the catalysis of copper powder during the sintering process, the problem that graphene is easy to agglomerate and difficult to disperse uniformly in the copper matrix has been solved. The nano Cr_(3)C_(2)-particles nailed at the interface favor to improve the interface bonding. The Cu/Graphene composite possesses high electrical conductivity, hardness, and plasticity. The composite wire exhibits high electrical conductivity of 96.93% IACS, great tensile strength of 488MPa, and excellent resistance to softening. Even after annealing at 400℃ for 1 h, the tensile strength can still reach 268 MPa with a conductivity of about 99.14% *** wire's temperature coefficient of resistance(TCR) is largely reduced to 0.0035/℃ due to the complex structure,which leads the wire to present low resistivity at higher temperatures. Such Cu/Graphene composite wire with excellent comprehensive performance has a good application prospect in high-power density motors.

关键词： Cu/Graphene composite Mechanical properties Electrical property Microstructure temperature coefficient of resistance

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetron sputtering

引用

Journal of Semiconductors 2017年第5期38卷 30-34页

作者： Bing Cheng Yijun Yin Jianqiang Han Jie Zhang The College of Mechanical & Electrical Engineering China Jiliang University

The temperature coefficient of resistance（abbreviated as TCR） of thin film resistors on some sensor chips,such as thermal converters,should be less than several ppm/℃.However,the TCR of reported thin films is larger than 5 ppm/℃.In this paper,Ni（24.9）Cr（72.5）Si（2.6） films are deposited on silicon dioxide film by DC and RF magnetron *** as-deposited films are annealed at 450 ℃ under different durations in N2 *** sheet resistance of thin films with various thickness and annealing time are measured by the four probe resistivity test system at temperature of 20,50,100,150,and 200 ℃ and then the TCR of thin films are *** results show that the film with the TCR of only-0.86 ppm/℃ can be achieved by RF magnetron sputtering and appropriate annealing conditions.

关键词： magnetron sputtering NiCrSi thin film sheet resistance temperature coefficient of resistance thermal converter

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：