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Journal of Advanced Ceramics 2024年第3期13卷 364-372页

作者： Huan Liu Yijin Hao Ziqi Yang Tianyi Feng Bin Su Xin Zhang Mengping Xue Bo-Ping Zhang Jing-Feng Li Beijing Municipal Key Laboratory of New Energy Materials and Technologies School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083China State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and EngineeringTsinghua UniversityBeijing 100084China

Over the past two decades,(K_(0.5)Na_(0.5))NbO_(3)(KNN)-based lead-free piezoelectric ceramics have made significant ***,attaining a high electrostrain with remarkable temperature stability and minimal hysteresis under low electric fields has remained a significant *** address this long-standing issue,we have employed a collaborative approach that combines defect engineering,phase engineering,and relaxation *** LKNNS-6BZH ceramic,when sintered at T_(sint)=1170℃,demonstrates an impressive electrostrain with a d_(33) value of 0.276%and 1379 pm·V^(-1)under 20 kV·cm^(-1),which is comparable to or even surpasses that of other lead-free and Pb(Zr,Ti)O_(3)***,the electrostrain performance of this ceramic remains stable up to a temperature of 125℃,with the lowest hysteresis observed at 9.73%under 40 kV·cm^(-1).These excellent overall performances are attributed to the presence of defect dipoles involving V′_(A)-V∙∙_(O) and B′_(Nb)-V∙∙O,the coexistence of R-O-T multiphase,and the tuning of the trade-off between long-range ordering and local *** work provides a lead-free alternative for piezoelectric actuators and a paradigm for designing piezoelectric materials with outstanding comprehensive performance under low electric fields.

关键词： lead-free piezoelectric ceramics temperature stability electrostrain potassium sodium niobate low hysteresis

Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors

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Science China(Information Sciences) 2024年第6期67卷 172-179页

作者： Zizheng LIU Qing ZHANG Xiaohe HUANG Chunsen LIU Peng ZHOU State Key Laboratory of Integrated Chip and Systems School of MicroelectronicsZhangjiang Fudan International Innovation CenterFudan University Frontier Institute of Chip and System Shanghai Key Lab for Future Computing Hardware and SystemFudan University Shaoxin Laboratory

Semimetallic bismuth（Bi） is one of the most effective strategies for reducing the contact resistance of two-dimensional transition metal dichalcogenide field effect transistors（FETs）. However, the low melting point of Bi contact（271.5℃） limits its reliable applications. In this study, we demonstrated that the temperature stability of Bi-contacted electrodes could be improved by inserting a high-melting point semimetallic antimony（Sb） between the Bi contacting layer and the gold（Au） capping layer. The proposed Bi/Sb/Au contact electrodes tended to form a metal mixture with a continuous surface during the heating process（Voids appeared on the surface of the Bi/Au contact electrodes after heating at 120℃）. Because of the improved contacting layer formed by the semimetal Bi/Sb alloy, the fabricated Bi/Sb/Au-contacted molybdenum sulfide（MoS2） FETs with different gate lengths demonstrated higher on-state current stability after heating treatment than the Bi/Au contact. Because of the Bi/Sb/Au contact and poly（methyl methacrylate） package, the MoS2FETs demonstrated time stability of at least two months from the almost unchanged transfer characteristics. The electrical stability indicates that the insertion of semimetallic Sb is a promising technology for reliable Bi-based contact.

关键词： temperature stability semimetallic bismuth contact semimetallic antimony contact MoS$_{2}$ FETs time stability

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Fiber resonator using negative-curvature anti-resonant fiber with temperature stability

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Journal of Systems Engineering and Electronics 2022年第6期33卷 1286-1293页

作者： MA Honghao LI Hui FENG Changkun FENG Lishuang GAO Shoufei WANG Yingying WANG Pu School of Instrumentation and Optoelectronics Engineering Beihang UniversityBeijing 100191China Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province Hangzhou Innovation Institute of Beihang UniversityHangzhou 310053China Institute of Photonics Technology Jinan UniversityGuangzhou 510632China Institute of Laser Engineering Beijing University of TechnologyBeijing 100124China

The coupling efficiency of hollow-core fiber changes with temperature,which leads to the decrease of the finesse(F)of fiber resonator and limits the performance of the resonant fiber optic gyroscope(R-FOG)***-curvature antiresonant fiber(ARF)can maintain single-mode characteristics under the condition of large mode field diameter,achieve efficient and stable fiber coupling,and significantly improve the consistency of the F of the spatial coupling resonator in variable temperature environment.A new type of ARF with a mode field diameter(MFD)of 25μm is used to fabricate a fiber resonator with a length of 5.14 *** the range of 25℃-75℃,the average F is *** ARF resonator is used to construct an R-FOG system that shows long-term bias stability(3600 s)of3.1°/h at room temperature,4.6°/h at 75℃.To our knowledge,this is the best reported index of hollow-core fiber resonator and R-FOG system within the temperature variation range of 50℃ test.

关键词： negative-curvature anti-resonant fiber(ARF) fiber resonator temperature stability

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Enhanced capacitive energy storage and dielectric temperature stability of A-site disordered high-entropy perovskite oxides

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Journal of Materials Science & Technology 2023年第14期145卷 66-73页

作者： Yating Ning Yongping Pu Chunhui Wu Shiyu Zhou Lei Zhang Jinbo Zhang Xian Zhang Yangchao Shang School of Materials Science and Engineering Shaanxi University of Science&TechnologyXi’an 710021China School of Electronic Information and Artificial Intelligence Shaanxi University of Science and TechnologyXi’an 710021China

In this work,a novel high entropy perovskite oxide(1-x)(Na_(0.2)Bi_(0.2)Ba_(0.2)Sr_(0.2)Ca_(0.2))TiO_(3-x)NaNbO_(3)(abbrevi-ated as(1-x)NBBSCT-x NN,x=0,0.05,0.1,0.15,and 0.2)was designed to improve temperature dielectric stability and energy storage performance by combining relaxor and antiferroelectric *** optimal composition of x=0.2 exhibits a high energy storage density of 3.51 J/cm^(3),together with wide temperature stable stability(■stability(W rec andηvary by only±2.1%and±5.2%within the range of 1-600 Hz)and fast discharge rate(t_(0.9)=55.2 ns).This is mainly due to the enhancement of relaxation behavior and increase of E b caused by the decrease of grain *** results offer a new strategy for designing high entropy ceramic materials of high performance in the future.

关键词： Energy storage High-entropy perovskite temperature stability Relaxor ferroelectrics

Synergy of lead vacancies and morphotropic phase boundary to promote high piezoelectricity and temperature stability of PBZTN ceramics

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Journal of Materials Science & Technology 2023年第6期137卷 1-7页

作者： Wenbin Liu Ting Zheng Xuezheng Ruan Zhenyong Man Haoyue Xue Laiming Jiang Fuping Zhang Guorong Li Jiagang Wu Department of Materials Science Sichuan UniversityChengdu 610065China Shanghai Institute of Ceramics Chinese Academy of SciencesShanghai 201800China Institute of Fluid Physics China Academy of Engineering PhysicsMianyang 621900China

The flourishing development of emerging electromechanical applications has stimulated an urgent demand for ferroelectric ceramics with high piezoelectric properties and broad temperature usage ***,it remains a challenge to simultaneously obtain good piezoelectricity and reliable temperature stability in lead zirconate titanate(PZT)-based piezoelectric *** solve this issue,a synergetic strategy was proposed to introduce lead vacancies through niobium doping and construct morphotropic phase boundary(MPB).In this work,Pb_(0.905)Ba_(0.085)(V Pb″)_(0.01)[(Zr_(x)Ti_(1-x))_(0.98)Nb_(0.02)]O_(3)(PBZTN-x)material system was *** comprehensive properties(d_(33)=864 pC/N,k_(p)=84%,T_(C)=201℃)and excellent temperature stability(less than 10%variation of electrical properties from 20℃ to 160℃)were obtained in PBZTN-0.540 *** piezoelectricity can be attributed to high extrinsic contribution(domain wall motion)induced by Pb^(2+)vacancies and the existence of nano-domains emerged at MPB,while excellent temperature stability is mainly attributed to the minimized local stress in the lattice and the stable domain structure.

关键词： Piezoelectricity Lead vacancies Morphotropic phase boundary temperature stability

Tetragonal (Ba, Ca) (Zr, Ti)O_(3) textured ceramics with enhanced piezoelectric response and superior temperature stability

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Journal of Materiomics 2022年第2期8卷 366-374页

作者： Qiangwei Kou Bin Yang Yuan Sun Shuai Yang Linjing Liu Hang Xie Yunfei Chang Shantao Zhang Fei Li Functional Materials and Acousto-Optic Instruments Institute School of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China Electronic Materials Research Laboratory(Key Lab of Education Ministry) State Key Laboratory for Mechanical Behavior of Materials and School of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'an710049China National Laboratory of Solid State Microstructures and College of Engineering and Applied Science Nanjing UniversityNanjing210093China

Lead-free ceramics with both high piezoelectric response and good temperature stability are urgently demanded for electromechanical conversion ***,owing to coexistence of poly-morphic phases near room temperature(RT),enhanced piezoelectric properties were usually achieved with occurrence of strong temperature dependence in modified BaTiO_(3)(BT)-based *** this work,we demonstrate that tailoring grain orientations of tetragonal BT-based ceramics can effectively produce substantially enhanced and thermally stabilized piezoelectric ***c-andc-oriented tetragonal(Ba_(0.85)Ca_(0.15))(Zr_(0.05)Ti_(0.95))O_(3)(BCZT)ceramics with texture degrees F>90%were synthesized via templated grain ***,the ceramics textured along thec polar axis show much higher microscopic and macroscopic piezoelectric properties than those with nonpolarc texture,indicating an“extender”ferroelectricity *** with randomly oriented samples,thec-oriented ceramics exhibit simultaneously~1.6 times higher piezoelectric strain d_(33)^(*)(~760 pm/V),4.4 times higher piezoelectric figure of merit d_(33)×g_(33)(8.8×10^(-12) m^(2)/N),and better temperature stability(strain variation≤5%between RT and 110℃).Such thermally stabilized strain response can be mainly attributed to wide temperature range of tetragonal phase and stable domain *** work provides a promising route for further developing lead-free piezoceramics with high and temperature-insensitive performance,which can greatly broaden their application areas.

关键词： Lead-free Textured ceramics Grain orientation Piezoelectric properties temperature stability

Enhanced energy-storage density and temperature stability of Pb_(0.89)La_(0.06)Sr_(0.05)(Zr_(0.95)Ti_(0.05))O_(3) anti-ferroelectric thin film capacitor

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Journal of Materiomics 2022年第1期8卷 239-246页

作者： Zhenhua Tang Songcheng Hu Dijie Yao Zeli Li Zhigang Liu Xiaobin Guo Biao Lu Jingmin Fan Xin-Gui Tang Sheng-Guo Lu Ju Gao School of Physics and Optoelectric Engineering Guangdong University of TechnologyGuangzhou Higher Education Mega CenterGuangzhou510006China Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter School of Materials and EnergyGuangdong University of TechnologyGuangzhou510006China School of Automation Guangdong University of TechnologyGuangzhou510006China Department of Physics The University of Hong KongPokfulam RoadHong KongChina

As the fundamental energy storage components in electronic systems,dielectric capacitors with high power densities were *** this work,the anti-ferroelectric Pb_(0.89)La_(0.06)Sr_(0.05)(Zr_(0.95)Ti_(0.05))O_(3)(PLSZT)ceramics and thin film capacitor were successfully fabricated by a solid-state reaction route and pulsed laser deposition method,*** ferroelectric,dielectric,energy-storage properties,and temperature stability of anti-ferroelectric PLSZT capacitor were investigated in *** compared with the PLSZT ceramic(energy storage density is 1.29 J/cm^(3) with an efficiency of 78.7%under 75 kV/cm),the anti-ferroelectric PLSZT thin film capacitors exhibited the enhanced energy storage density of 52.6 J/cm^(3) with efficiency of 67.7%under an electric field as high as 2068.9 kV/cm,and the enhanced energy-storage temperature stabilities from room temperature(RT)to more than 200℃ were demonstrated,and the oxygen defects mechanism and size effect were ***,the fast charging(~0.05 μs)and discharging(~0.15 μs)time were certified for the anti-ferroelectric PLSZT film *** findings broaden the horizon for PLSZT anti-ferroelectrics in high energy storage properties and show promising for manufacturing pulse power capacitor.

关键词： PLSZT anti-Ferroelectrics Pulsed laser deposition(PLD) Ferroelectric/dielectric properties Energy storage temperature stability

temperature stability of magnetoresistance (MR) and MR enhancement in La_(1-x)(Sr_(1-y)Ag_y)_x MnO_3 system

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Rare Metals 2013年第1期32卷 81-86页

作者： Yong-Gang Tang Gui-Ying Wang Guo-Qing Yan Qi-Xiang Song Ming-Yu Zhang Zhen-Sheng Peng Cultivating Base of Anhui Key Laboratory of Spintronics and Nano-Materials Research School of Mechanical and Electronic Engineering Suzhou University

Polycrystalline samples of Lal-x（Srl-yAgy）x MnO3 （y = 0.0, 0.2, 0.4, 0.6, 1.0） were prepared by the solid-state reaction method. The temperature stability of magnetoresistance and magnetoresistance enhancement in Lal_x（Srl_yAgy）~MnO3 system with both univalent and bivalent elements doped at A site and with unchanged value of Mn~＋/Mn4＋ ratio were explored through the measurements of X-ray diffraction patterns, magnetiza- tion-temperature （M-T） curves, resistivity-temperature （p-T） curves and magnetoresistance-temperature （MR-T） curves. The results are as follows： there are two peaks in the p-T curves of the samples with Ag doping, one is caused by resistance change during the paramagnetism- ferromagnetism transition, and the other is from boundary- dependent scattering of conduction electrons on the boundaries of grains. The peak value of MR increases with increasing Ag doping content, and it increases from 8.2 % for y ---- 0.2 to 29.6 % for y ---- 1.0 under the magnetic field of B = 0.8 T; MR remains a constant of 12 % in the temperature range of 218-168 K for the sample with y = 1.0, and the temperature stability of MR is in favor of the practical application of MR.

关键词： Ag doping Magnetoresistance enhancement temperature stability Perovskite manganite

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temperature stability and fracture toughness of Nd-Fe-B magnets

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Rare Metals 2006年第Z1期25卷 637-640页

作者： LI Ying QI Yuxuan LI Xiumei Tianjin Navigation Instrument Institute Tianjin 300131 China Tianjin Navigation Instrument Institute Tianjin 300131 China Division of Functional Materials Central Iron & Steel Research Institute Beijing 100081 China

temperature stability and toughness of magnets are very important properties especially for application in motor. In this paper, it is found that temperature stability and toughness of magnets are improved when Fe is substituted with Co and heavy rare earth is substituted for Nd in part and suitable rich B grain-boundary phase is added. In addition, heavy rare earth substitution decreases the remanence temperature coefficient greatly, but has a little effect on Curie temperature of the magnets, which is beneficial to Nd-Fe-B magnets for the application in motor.

关键词： Nd-Fe-B permanent magnet temperature stability mechanical characteristic motor

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Enhanced piezoelectric properties and temperature stability in KNN-based textured ceramics

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Journal of Advanced Dielectrics 2022年第5期12卷 12-18页

作者： Yan Lin Ru Wang Jiawei Qu Shuo Gao Yi Zhang Junli Yan Jigong Hao Peng Li Wei Li School of Materials Science and Engineering Liaocheng University Liaocheng 252059P.R.China

Considering the advantages of high Curie temperature and environment-friendly nature of KNN piezoelectric ceramics,the limitation of weak piezoelectric response and their temperature sensitivity to applications is worth ***,thetextured(1-x)(K_(0.5)Na_(0.5))(Nb0.96Sb0.04)O3-x(Bi_(0.5)Na_(0.5))HfO_(3)(x=0.01-0.045)lead-free ceramics were synthesized by templated grain-growth *** high piezoelectric performance(d33 of 474 pC/N and strain of 0.21%)and excellent temperature stability(unipolar strain maintained within 4.3%change between 30℃and 165℃)were simultaneously achieved in the textured KNNS-0.03BNH *** high piezoelectric performance can be attributed to the summation of the crystallographic anisotropy and phase structure contributions intextured *** superior temperature stability of piezoelectric properties can be interpreted by the contribution of crystal anisotropy to piezoelectric properties reduces the effect of phase transition on piezoelectric properties *** study provides an effective strategy for simultaneously achieving high piezoelectric properties and superior temperature stability in KNN-based textured ceramics.

关键词： Textured ceramics phase structure piezoelectric properties temperature stability