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Size and distribution of te inclusions in detector-grade CdZnte ingots

Progress in Natural Science:Materials International 2011年第1期21卷 66-72页

作者： Ya-dong XU~(1,2),Wan-qi JIE~1,Yi-hui HE~1,Rong-rong GUO~1,Tao WANG~1,Gang-qiang ZHA~1 1.State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi'an 710072,China 2.School of Materials Science and Engineering,Northwestern Polytechnical University,Xi'an 710072,China State Key Laboratory of Solidification Processing Northwestern Polytechnical University Xi'an 710072 China School of Materials Science and Engineering Northwestern Polytechnical University Xi'an 710072 China

To observe the te inclusions distribution along the axial direction of CdZnte ingots,batches of as-grown detector-grade CdZnte crystals grown by vertical Bridgman method,were investigated using IR transmission ***,there is not a rigorous regularity for the micron-scale te inclusions distribution along the axial direction of CdZnte ingots according to the measurements of the present *** size and distribution variations of te inclusions are attributed to the growth velocity, furnace temperature situation and morphological changes at the liquid-solid interface during crystal *** mobility lifetime products were discussed in conjunction with te ***,no strict correlations are identified between the sizes and concentrations of te inclusions and theγ-ray spectroscopy *** defects in CdZnte crystals,which are not visible via IR transmission imaging,potentially attribute to CdZnte detectors performance degrades.

关键词： CdZnte te inclusions IR imaging crystallization interface

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te inclusions in CdMnte crystal grown by the traveling heater method and their effects on the electrical properties

Te inclusions in CdMnTe crystal grown by the traveling heate...

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第八届中国功能材料及其应用学术会议

作者： SHEN Ping ZHANG Ji-jun WANG Lin-jun MIN Jia-hua HUANG Jian LIANG Xiao-yan TANG Ke SHEN Min WANG Lin XIA Yi-ben School of Materials science and engineering Shanghai University

The concentration and size distribution of te inclusions in CdMnte(CMT) are key factors in nuclear devices’ *** concentrations and large size can degrade the performance drastically,especially forelectrical *** this paper,the te inclusionsalong the axial and radial directionsin CMT crystal grown by the Traveling Heater Method(THM)technique were revealed by Infrared microscopic *** resistivity of the CMT wafers was measured by the current-voltage(Ⅰ-Ⅴ) curves,and the correlation between the te inclusions and resistivity was *** size and concentration of te inclusion seriously affect the resistivity of the CMT crystal.

关键词： CdMnte te inclusions Distribution Infrared microscopic Traveling Heater Method

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Distinctive distribution of defects in CdZnte:In ingots and their effects on the photoelectric properties

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Chinese Physics B 2018年第3期27卷 417-421页

作者： Xu Fu Fang-Bao Wang Xi-Ran Zuo Ze-Jian Wang Qian-Ru Wang Ke-Qin Wang Ling-Yan Xu Ya-Dong Rong-Rong Guo Hui Yu Wan-Qi Jie State Key Laboratory of Solidification Processing and Ministry of Industry and Information Technology(MIIT)Key Laboratoryof Radiation Detection Materials and DevicesNorthwestern Polytechnical UniversityXi'an 710072China School of Opto-electronic and Communication Engineering Xiamen University of TechnologyXiamen 361024China

Photoelectric properties of CdZnte:In samples with distinctive defect distributions are investigated using various *** cut from the head(T04)and tail(W02)regions of a crystal ingot show distinct differences in te inclusion *** difference is not observed in Fourier transform infrared(FTIR)spectra,UV-Vis-NIR transmittance spectra,and I-V ***,carrier mobility of the tip sample is higher than that of the tail according to the laser beam induced current(LBIC)*** temperature photoluminescence(PL)measurement presents sharp emission peaks of D^(0)X and A^(0)X,and relatively large peak of D^(0)X(or A^(0)X)/Dcomplex for T04,indicating a better crystalline *** stimulated current(TSC)spectrum shows higher density of shallow point defects,i.e.,Cd vacancies,In^(+)_(Cd),etc.,in W02 sample,which could be responsible for the deterioration of electron mobility.

关键词： defects te inclusions semiconducting II-VI materials CdZnte

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Defects in CdMnte crystals for nuclear detector applications

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Journal of Semiconductors 2013年第4期34卷 15-19页

作者：杜园园介万奇徐亚东郑昕王涛于晖 State Key Laboratory of Solidification Processing School of Materials Science and EngineeringNorthwestern Polytechnical University

A laser scanning confocal microscope （LSCM） and a field-emission scanning electron microscope （FE- SEM） were used to study the defects in CdMnte crystals, such as twin boundaries, te inclusions, and dislocations. Twin boundaries were usually decorated with te inclusions, which could induce dislocations. The optical, elec- trical properties and detector performance of CdMnte crystals with twins and free of twins were compared. The results showed that the wafers with a high density of twins usually had lower average IR transmittance and poorer crystalline quality. Besides, the energy spectra indicated that twin boundaries in a CdMnte detector had a negative effect on detector performance; the values of both the energy resolution and （μτ）e were nearly half of those for a single crystal detector.

关键词： CdMnte twin boundary te inclusions dislocations detector response

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