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One-step method to simultaneously synthesize separable te and Gete nanosheets

Nano Research 2022年第7期15卷 6736-6742页

作者： Yuyu Yao Xueying Zhan Chuyun Ding Feng Wang Yanrong Wang Jia Yang Zhenxing Wang Jun He CAS Center for Excellence in Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical FabricationNational Center for Nanoscience and TechnologyBeijing 100190China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Sino-Danish College University of Chinese Academy of SciencesBeijing 100049China Department of Physics Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric PowerShanghai University of Electric PowerShanghai 200090China Key Laboratory of Artificial Micro-and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan UniversityWuhan 430072China Sino-Danish Center for Education and Research Beijing 100049China

The chemical vapor deposition(CVD)method has been widely used to synthesize high-quality two-dimensional(2D)materials.However,just one type of product can be synthesized by general CVD at one time.Here,we demonstrate a one-step CVD method to simultaneously grow two types of products.Importantly,the products can be completely separated by selecting the deposition region.In detail,the controllable and completely separable growth forα-Gete and te nanosheets was realized by using one precursor-Gete powder through the atmospheric pressure CVD(APCVD)approach.High crystal quality of the as-grownα-Gete nansosheets and te nanosheets have been proved by the high-resolution transmission electron microscopy(HRteM)characterization.Further,the field-effect-transistor(FET)based onα-Gete nanosheet manifests that the as-grownαGete nanosheet is a degenerate semiconductor due to the intrinsic Ge vacancies.Additionally,te-based FET devices indicate that the good electrical performance of the as-grown te nanosheet,such as high mobility of 900 cm2·V^(−1)·s^(−1)(at room temperature),high on/off ratio of>106(at 77 K),and good air-stability.The developed one-step CVD method shows the huge potentials for high-efficiency and high-quality material growth.

关键词： controllable growth completely separable growth α-Gete crystal te crystal high mobility

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