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Intense terahertz radiation: generation and application

Frontiers of Optoelectronics 2021年第1期14卷 4-36页

作者： Yan ZHANG Kaixuan LI Huan ZHAO Department of Physics Beijing Key Laboratory for Metamaterials and DevicesBeijing Advanced Innovation Center for Imaging Theory and TechnologyCapital Normal UniversityBeijing 100048China

Strong terahertz(thz)radiation provides a powerful tool to manipulate and control complex condensed matter systems.This review provides an overview of progress in the generation,detection,and applications of intense thz radiation.The tabletop intense thz sources based on Ti:sapphire laser are reviewed,including photoconductive antennas(PCAs),optical rectification sources,plasma-based thz sources,and some novel techniques for thz generations,such as topological insulators,spintronic materials,and metasurfaces.The coherent thz detection methods are summarized,and their limitations for intense thz detection are analyzed.Applications of intense thz radiation are introduced,including applications in spectroscopy detection,nonlinear effects,and switching of coherent magnons.The review is concluded with a short perspective on the generation and applications of intense thz radiation.

关键词： terahertz(thz)radiation thz generation thz detection light-matter interaction

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Design and Realization of Schottky Barrier Didoes in 130nm CMOS Process

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Journal of Beijing Institute of Technology 2017年第2期26卷 223-227页

作者： Junyu Shi Dasheng Cui Haidong Hao Haixia Wu Xin Lyu School of Information and Electronics Beijing Institute of Technology Beijing 100081 China

A polysilicon separated CMOS Schottky barrier diode is designed and tested in this study.By replacing the shallow trench isolation（STI）of a ploy ring,the series resistances of Schottky diodes are reduced,leading to an improvement in cut-off frequencies.The device structure is detailed and a device model is developed.Our analysis on the device shows that the cut-off frequency increases with the decreasing of the Schottky contact area.Based on this observation,the Schottky contact area is set to0.38×0.38μm^2,which is the minimum contact diffusion area allowed by the process flow.The distance between the anode and the cathode is also discussed.Diodes with different dimensions are fabricated and measured.Through extensive measurements,the optimum dimensions are obtained.Bondpads with a reduced area are used to improve the measurement accuracy.The measurement results show that these diodes can achieve a cut-off frequency of 1.5 thz.Thus,it is possible to use these diodes in thz detection.

关键词： Schottky barrier diodes cut-off frequency silicon thz detection

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