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Study on the characteristics of linac based thz light source

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Chinese Physics C 2009年第10期33卷 922-925页

作者：朱雄伟王书鸿陈森玉 Institute of High Energy Physics Chinese Academy of Sciences

There are many methods based on linac for thz radiation production. As one of the options for the Beijing Advanced Light, an ERL test facility is proposed for thz radiation. In this test facility, there are 4 kinds of methods to produce thz radiation： coherent synchrotron radiation （CSR）, synchrotron radiation （SR）, low gain FEL oscillator, and high gain SASE FEL. In this paper, we study the characteristics of the 4 kinds of thz light sources.

关键词： photon linac thz light source

A thz InGaAs/InP double heterojunction bipolar transistor with f_(max)=325 GHz and BV_(CBO)=10.6 V

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Journal of Semiconductors 2013年第5期34卷 76-78页

作者：程伟王元赵岩陆海燕高汉超杨乃彬 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A common-base four finger InGaAs/InP double heterostructure bipolar transistor （DHBT） has been designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The area of each emitter finger is 1 × 15 μm2. The maximum oscillation frequency （fmax） is 325 GHz and the breakdown voltage BV_CBO is 10.6 V, which are to our knowledge both the highest fmax and BV_CBo ever reported for InGaAs/InP DHBTs in China. The high speed InGaAs/InP DHBT with a high breakdown voltage is promising for submillimeter-wave and thz electronics.

关键词： InP DHBT thz high breakdown

MEMS-actuated terahertz metamaterials driven by phase-transition materials

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Frontiers of Optoelectronics 2024年第2期17卷 23-32页

作者： Zhixiang Huang Weipeng Wu Eric Herrmann Ke Ma Zizwe A.Chase Thomas A.Searles M.Benjamin Jungfleisch Xi Wang Department of Materials Science and Engineering College of EngineeringUniversity of DelawareNewarkDE 19716USA Department of Physics and Astronomy College of Arts and SciencesUniversity of DelawareNewarkDE 19716USA Department of Electrical and Computer Engineering College of EngineeringUniversity of Illinois ChicagoChicagoIL 60607USA

The non-ionizing and penetrative characteristics of terahertz(thz)radiation have recently led to its adoption across a variety of *** effectively utilize thz radiation,modulators with precise control are *** most recent thz modulators manipulate the amplitude,frequency,or phase of incident thz radiation,considerably less progress has been made toward thz polarization *** methods for polarization control suffer from high driving voltages,restricted modulation depth,and narrow band capabilities,which hinder device performance and broader ***,an ideal thz modulator that offers high modulation depth along with ease of processing and operation is *** this paper,we propose and realize a thz metamaterial comprised of microelectromechanical systems(MEMS)actuated by the phase-transition material vanadium dioxide(VO_(2)).Simulation and experimental results of the three-dimensional metamaterials show that by leveraging the unique phase-transition attributes of VO_(2),our thz polarization modulator offers notable advancements over existing designs,including broad operation spectrum,high modulation depth,ease of fabrication,ease of operation condition,and continuous modulation *** enhanced features make the system a viable candidate for a range of thz applications,including telecommunications,imaging,and radar systems.

关键词： Metamaterials MEMS thz VO_(2) Phase-transition material

基于Schottky二极管和Hammer-Head滤波器0.67thz二次谐波混频器

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红外与毫米波学报 2016年第4期35卷 418-424页

作者：蒋均何月王成刘杰田遥岭张健邓贤进中国工程物理研究院电子工程研究所四川绵阳621900 中国工程物理研究院微系统和太赫兹研究中心四川绵阳621900

通过测量肖特基二极管的I-V和C-V曲线,建立等效电路模型.利用三维电磁场和谐波平衡仿真工具分别进行三维结构仿真和电路宽带匹配,最终实现混合集成方式的0.67thz谐波混频器设计.测试结果表明：混频器中心频率为0.685 thz,射频3 dB带宽为... 详细信息

通过测量肖特基二极管的I-V和C-V曲线,建立等效电路模型.利用三维电磁场和谐波平衡仿真工具分别进行三维结构仿真和电路宽带匹配,最终实现混合集成方式的0.67thz谐波混频器设计.测试结果表明：混频器中心频率为0.685 thz,射频3 dB带宽为47 GHz,双边带变频损耗13.1~16 dB,在685 GHz双边带噪声温度最低值为11500 K.

关键词： 0.67 thz 谐波混频器 Y因子测试肖特基二极管

Impact of device resistances in the performance of graphene‑based terahertz photodetectors

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Frontiers of Optoelectronics 2024年第2期17卷 87-97页

作者： O.Castelló Sofía M.López Baptista K.Watanabe T.Taniguchi E.Diez J.E.Velázquez-Pérez Y.M.Meziani J.M.Caridad J.A.Delgado-Notario Department of Applied Physics University of Salamanca37008 SalamancaSpain Unidad de Excelencia en Luz y Materia Estructurada(LUMES) University of Salamanca37008 SalamancaSpain Research Center for Electronic and Optical Materials National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan Research Center for Materials Nanoarchitectonics National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan Nanotechnology Group USAL-NanolabUniversity of Salamanca37008 SalamancaSpain

In recent years,graphene field-effect-transistors(GFETs)have demonstrated an outstanding potential for terahertz(thz)photodetection due to their fast response and *** features are essential to enable emerging thz applications,including 6G wireless communications,quantum information,bioimaging and ***,the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device,so-called access or parasitic *** this work,we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET *** dual-gate architectures allow us to fine tune(decrease)the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector,*** results can be well understood by a series resistance model,as shown by the excellent agreement found between the experimental data and theoretical *** findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.

关键词： Graphene thz Photodetector Field-effect transistor Plasmonic

thz time domain monostatic radar cross section measurement of metallic plates and dihedrons

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太赫兹科学与电子信息学报 2019年第4期17卷 567-571页

作者： HUO Yiwei WU Yajun WANG Xiaobing Science and Technology on Electromagnetic Scattering Laboratory Shanghai 200438China

thz Radar Cross Section(RCS)measurement setup based on thz Time Domain Spectroscopy(TDS)is built to provide large scaled targets test ability in recent *** calibrations,the metal plates and dihedrons are used in our *** measurements are performed in a monostatic terahertz time-domain *** author proposed time domain and frequency domain calibration methods for angular RCS of calibrations,comparing the measurements with the theory to verify the ability of the time domain measurement setup.

关键词： monostatic Radar Cross Section Terahertz metallic plates and dihedrons thz Time Domain Spectroscopy

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thz波的小波变换频谱分析

物理学报 2005年第11期54卷 5224-5227页

作者：邓玉强邢岐荣郎利影柴路王清月张志刚天津大学精密仪器与光电子工程学院超快激光研究室光电信息技术科学教育部重点实验室北京大学信息科学与技术学院量子电子学研究所北京100871

将小波变换引入thz波时域光谱技术.将水蒸气的thz波时域信号通过小波变换转化为二维的时间-频率平面,得到了和文献报道数据相一致的水蒸气的吸收谱线.同时发现了thz波频谱的时域分布特性,这将有利于进一步研究thz波与物质相互作用的内... 详细信息

将小波变换引入thz波时域光谱技术.将水蒸气的thz波时域信号通过小波变换转化为二维的时间-频率平面,得到了和文献报道数据相一致的水蒸气的吸收谱线.同时发现了thz波频谱的时域分布特性,这将有利于进一步研究thz波与物质相互作用的内在机理.

关键词： thz波,频谱分析,小波变换小波变换频谱分析 thz 时域信号光谱技术分布特性吸收谱线文献报道内在机理

thz量子级联激光器跃迁速率的数值求解及验证

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光电子．激光 2013年第12期24卷 2283-2288页

作者：祁昶石新智叶双莉江金光武汉大学微电子与信息技术研究院湖北武汉430079 武汉大学卫星导航定位技术研究中心湖北武汉430079

thz量子级联激光器(QCL,quantum cascade laser)有源区载流子的跃迁速率是研究激光器内部输运特性,模拟激光器特性和优化设计的关键参数。本文针对跃迁速率的计算问题,在连续介质模型下提出了一种运用自洽方法和费米黄金法则计算thz QC... 详细信息

thz量子级联激光器(QCL,quantum cascade laser)有源区载流子的跃迁速率是研究激光器内部输运特性,模拟激光器特性和优化设计的关键参数。本文针对跃迁速率的计算问题,在连续介质模型下提出了一种运用自洽方法和费米黄金法则计算thz QCL有源区载流子跃迁速率的方法。方法考虑了包括电子-纵向光声子散射、电子-电子散射机制以及电子-光子散射对跃迁速率的影响。利用本文方法对已报道的thz QCL进行了数值模拟,讨论了温度参数和注入掺杂浓度参数对跃迁速率的影响并进行了模拟分析,分析结果与已报道的理论和实验结果一致,验证了方法的适用性和准确性。本文方法的提出为运用速率方程法进行thz QCL有源层的建模和优化设计提供了基础。

关键词： thz 量子级联激光器(QCL) 跃迁速率模拟分析

利用国内生长的有机晶体DAST作为thz源的研究

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光谱学与光谱分析 2006年第10期26卷 1777-1780页

作者：李昆李春胡章贵汪力张杰中国科学院物理研究所光物理实验室北京100080 中国科学院理化技术研究所北京100080

利用时域光谱技术分别测量了通过光整流法在国内新生长的有机晶体DAST和国际常用的高效能thz晶体ZnTe中产生的thz脉冲的时域光谱,也测量和分析了有机晶体DAST在thz波段的色散和吸收特性,并通过热辐射探测计(4.2 K Si-bolometer)测量了TH... 详细信息

利用时域光谱技术分别测量了通过光整流法在国内新生长的有机晶体DAST和国际常用的高效能thz晶体ZnTe中产生的thz脉冲的时域光谱,也测量和分析了有机晶体DAST在thz波段的色散和吸收特性,并通过热辐射探测计(4.2 K Si-bolometer)测量了thz脉冲的绝对能量。结果表明,国内新生长的有机晶体DAST的确是一种高效率的thz产生晶体,优化生长条件后将可得到更高的产生效率。

关键词： thz DAST时域光谱热辐射探测器