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Instability of parasitic capacitance in t-shape-gate enhancementmode AlGaN/GaN MIS-HEMts

Journal of Semiconductors 2022年第3期43卷 74-77页

作者： Lan Bi Yixu Yao Qimeng Jiang Sen Huang Xinhua Wang Hao Jin Xinyue Dai Zhengyuan Xu Jie Fan Haibo Yin Ke Wei Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Institute of Microelectronics University of Chinese Academy of SciencesBeijing 100049China

Parasitic capacitances associated with overhangs of the t-shape-gate enhancement-mode(E-mode)GaN-based power device,were investigated by frequency/voltage-dependent capacitance-voltage and inductive-load switching *** overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gatedrain capacitance characteristic ***-and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiNx passivation ***-level double pulse measurement also reveals its impact on switching transition for power switching applications.

关键词： AlGaN/GaN MIS-HEMts enhancement-mode t-shape gate parasitic capacitance trapping/de-trapping capacitancevoltage hysteresis

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Radio frequency transistors based on ultra-high purity semiconducting carbon nanotubes with superior extrinsic maximum oscillation frequency

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Nano Research 2016年第2期9卷 363-371页

作者： Yu Cao Yuchi Che Hui Gui Xuao Oao Chongwu Zhou Department of Electrical Engineering University of Southern California Los Angeles CA 90089 USA Department of Chemical Engineering and Materials Science University of Southern California Los Angeles CA 90089 USA

In this paper, we report polyfluorene-separated ultra-high purity semiconducting carbon nanotube radio frequency transistors with a self-aligned t-shape gate structure. Because of the ultra-high semiconducting tube purity and self-aligned t-shape gate structure, these transistors showed an excellent direct current and radio frequency performance. In regard to the direct current characteristics, these transistors showed a transconductance up to 40μS/μm and an excellent current saturation behavior with an output resistance greater than 200 kΩ·μm. In terms of the radio frequency characteristics, an extrinsic maximum oscillation frequency （fmax） of 19 GHz was achieved, which is a record among all kinds of carbon nanotube transistors, and an extrinsic current gain cut-off frequency （ft） of 22 GHz was achieved, which is the highest among transistors based on carbon nanotube networks. Our results take the radio frequency performance of carbon nanotube transistors to a new level and can further accelerate the application of carbon nanotubes for future radio frequency electronics.

关键词： carbon nanotube ultra-high purity radio frequency transistors maximum oscillation frequency t-shape gate

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