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Dispersion characteristics of nanometer-scaled silicon nitride suspended membrane waveguides

Journal of Semiconductors 2016年第11期37卷 60-66页

作者：边丹丹雷勋陈少武 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences

We investigate the dispersion properties ofnanometer-scaled silicon nitride suspended membrane wave- guides around the communication wavelength and systematically study their relationship with the key structural parameters of the waveguide. The simulation results show that a suspended membrane waveguide can realize anomalous dispersion with a relatively thinner silicon nitride thickness in the range of 400 to 600 nm, whereas, for the same membrane thickness, a conventional rib or strip silicon nitride waveguide cannot support anomalous dispersion. In particular, a waveguide with 400 nm silicon nitride thickness and deep etch depth （r = 0.05） exhibits anomalous dispersion around the communication wavelength when the waveguide width ranges from 990 to 1255 nm, and the maximum dispersion is 22.56 ps/（***）. This specially designed anomalous dispersion silicon nitride waveguide is highly desirable for micro-resonator based optical frequency combs due to its potential to meet the phase-matching condition required for cascaded four-wave-mixing.

关键词： suspended waveguide group velocity dispersion dispersion engineering frequency comb

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suspended nanomembrane silicon photonic integrated circuits

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Chip 2024年第3期3卷 29-35页

作者： Rongxiang Guo Qiyue Lang Zunyue Zhang Haofeng Hu Tiegen Liu Jiaqi Wang Zhenzhou Cheng School of Precision Instrument and Opto-electronics Engineering Tianjin UniversityTianjin 300072China Key Laboratory of Opto-electronic Information Technology Ministry of EducationTianjin 300072China College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China Georgia Tech-Shenzhen Institute Tianjin UniversityShenzhen 518055China Department of Chemistry The University of TokyoTokyo 113-0033Japan School of Physics and Electronic Engineering Xinjiang Normal UniversityUrumqi 830054China

Leveraging the low linear and nonlinear absorption loss of silicon at mid-infrared(mid-IR)wavelengths,silicon photonic integrated circuits(PICs)have attracted significant attention for mid-IR applications including optical sensing,spectroscopy,and nonlinear ***,mid-IR silicon PICs typically show moderate performance compared to state-of-the-art silicon photonic devices operating in the telecommunication ***,we proposed and demonstrated suspended nanomembrane silicon(SNS)PICs with light-guiding within deep-subwavelength waveguide thickness for operation in the short-wavelength mid-IR *** demonstrated key building components,namely,grating couplers,waveguide arrays,micro-resonators,etc.,which exhibit excellent performances in bandwidths,back reflections,quality factors,and fabrication ***,the results show that the proposed SNS PICs have high compatibility with the multi-project wafer foundry *** study provides an unprecedented platform for mid-IR integrated photonics and applications.

关键词： Silicon photonics suspended waveguide Mid-infrared Photonic integrated circuits Subwavelength grating

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